C. J. Eiting

1.8k citations

50 papers · 1.5k indexed · h-index 21

Nuclear Energy and Engineering top 0.5%
Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials 48
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 34
Instrumentation top 10%
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 8
- Semiconductor materials and interfaces 4
Materials Chemistry
- ZnO doping and properties 15
Electrical and Electronic Engineering
- Semiconductor materials and devices 12
Mechanics of Materials
- Metal and Thin Film Mechanics 9
Biomedical Engineering
- Photocathodes and Microchannel Plates 9

Co-authors: Russell D. Dupuis Piotr Grudowski John C. Carrano Joe C. Campbell Damien Lambert T. Li Z. Liliental‐Weber B. S. Shelton
Cited by: Nuclear Energy and Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials
Journals: Applied Physics Letters (14 papers)Journal of Crystal Growth (5 papers)Journal of Electronic Materials (5 papers)
Partner nations: United States Poland Japan

In The Last Decade

C. J. Eiting

48 papers receiving 1.4k citations

Peers

Countries citing papers authored by C. J. Eiting

Since Specialization

Citations

This map shows the geographic impact of C. J. Eiting's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. J. Eiting with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. J. Eiting more than expected).

Fields of papers citing papers by C. J. Eiting

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. J. Eiting. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. J. Eiting. The network helps show where C. J. Eiting may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C. J. Eiting, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. J. Eiting Line = papers co-authored together C. J. Eiting links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Demonstration of a radiation resistant, high efficiency SiC betavoltaic Applied Physics Letters ·C. J. Eiting,V. Krishnamoorthy,S. Rodgers,茂樹大浦,J. David Robertson,John Brockman	2006	121
2	Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C60 and Si effusion cells Journal of Crystal Growth ·W. V. Lampert,C. J. Eiting,NA Amosova,K. Mahalingam,L. Grazulis,T. W. Haas	2002	3
3	Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition Journal of Crystal Growth ·Ho Ki Kwon,C. J. Eiting,Damien Lambert,M.M. Wong,B. S. Shelton,Ting Zhu,Z. Liliental‐Weber,Гжегож Подскарбі,Russell D. Dupuis	2000	2
4	AlGaN/GaN heterojunction bipolar transistors grownbymetal organic chemical vapour deposition Electronics Letters ·B. S. Shelton,Jian‐Jang Huang,Damien Lambert,Ting Zhu,M.M. Wong,C. J. Eiting,Ho Ki Kwon,Ming Feng,Russell D. Dupuis	2000	33
5	Growth of III-N materials and devices by metalorganic chemical vapor deposition Semiconductors ·Russell D. Dupuis,Piotr Grudowski,C. J. Eiting,Jihun Park	1999	2
6	Dependence of Device Characteristics on the Intrinsic Material Properties of High-Performance AlGaN/GaN HEMTs physica status solidi (a) ·B. S. Shelton,M.M. Wong,Ting Zhu,C. J. Eiting,Damien Lambert,E. Romelli,Russell D. Dupuis	1999	5
7	Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Kenji Shiojima,J. M. Woodall,C. J. Eiting,H Dietrich,Russell D. Dupuis	1999	24
8	TEM Study of Defects in Laterally Overgrown GaN Layers MRS Internet Journal of Nitride Semiconductor Research ·Z. Liliental‐Weber,Mourad Benamara,W. Swider,J. Washburn,Jihun Park,Piotr Grudowski,C. J. Eiting,Russell D. Dupuis	1999	14
9	Very high-speed ultraviolet photodetectors fabricated on GaN Journal of Electronic Materials ·John C. Carrano,T. Li,C. J. Eiting,Russell D. Dupuis,Joe C. Campbell	1999	29
10	Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition Applied Physics Letters ·Z. Liliental‐Weber,Mourad Benamara,W. Swider,J. Washburn,I. Grzegory,S. Porowski,Damien Lambert,C. J. Eiting,Russell D. Dupuis	1999	77
11	Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition Applied Physics Letters ·K. Bohner,Piotr Grudowski,C. J. Eiting,Russell D. Dupuis	1998	61
12	Properties of InGaN multiple-quantum-well heterostructures grown by metalorganic chemical vapor deposition Journal of Crystal Growth ·H Dietrich,C. J. Eiting,Russell D. Dupuis	1998	1
13	P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition Journal of Electronic Materials ·C. J. Eiting,Piotr Grudowski,Russell D. Dupuis	1998	16
14	High-speed pin ultraviolet photodetectorsfabricated on GaN Electronics Letters ·John C. Carrano,T. Li,Daniel L. Brown,Piotr Grudowski,C. J. Eiting,Russell D. Dupuis,Joe C. Campbell	1998	25
15	High quantum efficiency metal-semiconductor-metalultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers Electronics Letters ·John C. Carrano,T. Li,Piotr Grudowski,C. J. Eiting,Russell D. Dupuis,Joe C. Campbell	1997	28
16	Optical data storage in InGaN/GaN heterostructures Applied Physics Letters ·I. K. Shmagin,John F. Muth,R. M. Kolbas,Russell D. Dupuis,Piotr Grudowski,C. J. Eiting,Jihun Park,B. S. Shelton,Damien Lambert	1997	10
17	The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD Journal of Electronic Materials ·Piotr Grudowski,A.L. Holmes,C. J. Eiting,Russell D. Dupuis	1997	11
18	Characteristics of Mg‐Doped GaN Grown by Metallorganic Chemical Vapor Deposition Journal of The Electrochemical Society ·C. J. Eiting,Piotr Grudowski,Jihun Park,Damien Lambert,B. S. Shelton,Russell D. Dupuis	1997	17
19	Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers Applied Physics Letters ·John C. Carrano,Piotr Grudowski,C. J. Eiting,Russell D. Dupuis,Joe C. Campbell	1997	91
20	The luminescence characteristics of GaN heteroepitaxial films JOM ·Piotr Grudowski,A.L. Holmes,C. J. Eiting,Russell D. Dupuis	1996	2

About C. J. Eiting

C. J. Eiting is a scholar working on Condensed Matter Physics, Nuclear Energy and Engineering, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Atomic and Molecular Physics, and Optics, having authored 50 papers that have together received 1.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (48 papers), Ga2O3 and related materials (34 papers), ZnO doping and properties (15 papers), Semiconductor materials and devices (12 papers), Metal and Thin Film Mechanics (9 papers), Photocathodes and Microchannel Plates (9 papers), Semiconductor Quantum Structures and Devices (8 papers) and Semiconductor materials and interfaces (4 papers). The work is most often cited by research in Nuclear Energy and Engineering (111 citations), Condensed Matter Physics (1.1k citations), Electronic, Optical and Magnetic Materials (679 citations), Instrumentation (49 citations) and Atomic and Molecular Physics, and Optics (419 citations). C. J. Eiting has collaborated with scholars based in United States, Poland and Japan. Frequent co-authors include Russell D. Dupuis, Piotr Grudowski, John C. Carrano, Joe C. Campbell, Damien Lambert, T. Li, Z. Liliental‐Weber, B. S. Shelton, Mourad Benamara and S. Wang. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Electronic Materials, Electronics Letters and MRS Internet Journal of Nitride Semiconductor Research.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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