A. Krtschil

1.4k total citations
58 papers, 1.1k citations indexed

About

A. Krtschil is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, A. Krtschil has authored 58 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Condensed Matter Physics, 36 papers in Electrical and Electronic Engineering and 19 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in A. Krtschil's work include GaN-based semiconductor devices and materials (45 papers), Semiconductor materials and devices (30 papers) and Ga2O3 and related materials (19 papers). A. Krtschil is often cited by papers focused on GaN-based semiconductor devices and materials (45 papers), Semiconductor materials and devices (30 papers) and Ga2O3 and related materials (19 papers). A. Krtschil collaborates with scholars based in Germany, United States and United Kingdom. A. Krtschil's co-authors include A. Krost, A. Dadgar, J. Bläsing, A. Diez, J. Christen, Thomas Hempel, F. Bertram, J. Christen, H. De Witte and A. Reiher and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

In The Last Decade

A. Krtschil

56 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Krtschil Germany 17 735 609 540 533 205 58 1.1k
B. Meyler Israel 20 640 0.9× 618 1.0× 695 1.3× 581 1.1× 126 0.6× 66 1.4k
L. Görgens Germany 12 562 0.8× 397 0.7× 468 0.9× 240 0.5× 122 0.6× 19 860
Shinya Nunoue Japan 15 932 1.3× 435 0.7× 393 0.7× 380 0.7× 205 1.0× 61 1.1k
Michael W. Moseley United States 24 1.1k 1.4× 399 0.7× 506 0.9× 635 1.2× 143 0.7× 40 1.2k
J. Baur Germany 15 773 1.1× 553 0.9× 487 0.9× 318 0.6× 74 0.4× 28 1.1k
Marc P. Hoffmann United States 19 947 1.3× 414 0.7× 406 0.8× 570 1.1× 164 0.8× 34 1.1k
Jong Hyeob Baek South Korea 17 653 0.9× 530 0.9× 437 0.8× 307 0.6× 100 0.5× 70 977
Masahiro Horita Japan 25 1.1k 1.5× 621 1.0× 1.4k 2.6× 611 1.1× 145 0.7× 122 1.8k
Jordan D. Greenlee United States 19 620 0.8× 328 0.5× 693 1.3× 428 0.8× 97 0.5× 40 994
Lindsay Hussey United States 15 702 1.0× 304 0.5× 266 0.5× 361 0.7× 185 0.9× 19 806

Countries citing papers authored by A. Krtschil

Since Specialization
Citations

This map shows the geographic impact of A. Krtschil's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Krtschil with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Krtschil more than expected).

Fields of papers citing papers by A. Krtschil

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Krtschil. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Krtschil. The network helps show where A. Krtschil may publish in the future.

Co-authorship network of co-authors of A. Krtschil

This figure shows the co-authorship network connecting the top 25 collaborators of A. Krtschil. A scholar is included among the top collaborators of A. Krtschil based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Krtschil. A. Krtschil is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Witte, H. De, et al.. (2009). Photoelectric properties of the undoped GaN/AlN interlayer/high purity Si(1 1 1) interface. Journal of Physics D Applied Physics. 42(20). 205103–205103. 4 indexed citations
2.
Schulze, F., A. Dadgar, A. Krtschil, et al.. (2008). MOVPE growth of blue InxGa1–xN/GaN LEDs on 150 mm Si(001). Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2238–2240. 2 indexed citations
3.
Krtschil, A., J. Bläsing, Thomas Hempel, et al.. (2007). Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode. Journal of Crystal Growth. 308(1). 170–175. 35 indexed citations
4.
Dadgar, A., A. Krost, J. Christen, et al.. (2006). MOVPE growth of high-quality AlN. Journal of Crystal Growth. 297(2). 306–310. 73 indexed citations
5.
Schwarz, Ulrich T., W. Wegscheider, R. Clos, et al.. (2006). Long range strain and electrical potential induced by single edge dislocations in GaN. Physica B Condensed Matter. 376-377. 451–454. 4 indexed citations
6.
Reiher, A., H. De Witte, A. Krtschil, et al.. (2006). Electrical stimulation of the energy metabolism in yeast cells using a planar Ti-Au-Electrode interface. Journal of Bioenergetics and Biomembranes. 38(2). 143–148. 4 indexed citations
7.
Look, D. C., Fang Zhao, A. Krtschil, & A. Krost. (2005). Giant traps associated with extended defects in GaN and SiC. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(3). 1039–1046. 2 indexed citations
8.
Neuburger, Martin, Tom Zimmermann, E. Kohn, et al.. (2005). Unstrained InAlN/GaN HEMT structure. 161–166. 7 indexed citations
9.
Schwarz, Ulrich T., W. Wegscheider, R. Clos, et al.. (2005). Local strain and potential distribution induced by single dislocations in GaN. Journal of Applied Physics. 98(11). 12 indexed citations
10.
Witte, H. De, A. Krtschil, Marco Lisker, et al.. (2004). Suppressing of optical quenching of deep defect-to-band transitions in AlGaN and GaN/AlGaN heterostructures. Applied Physics Letters. 84(18). 3498–3500. 4 indexed citations
11.
Witte, H. De, et al.. (2003). Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods. MRS Proceedings. 798. 2 indexed citations
12.
Witte, H. De, A. Krtschil, Marco Lisker, et al.. (2003). Deep-defect-induced quenching effects in semi-insulating GaN layers detected by photoelectrical spectroscopic techniques. Applied Physics Letters. 82(23). 4083–4085. 8 indexed citations
13.
Krtschil, A., J. Bläsing, A. Dadgar, et al.. (2002). Metalorganic chemical vapor phase deposition of ZnO with different O-precursors. Journal of Crystal Growth. 248. 14–19. 44 indexed citations
14.
Poschenrieder, M., Karsten Fehse, Florian Schulz, et al.. (2002). MOCVD‐Grown InGaN/GaN MQW LEDs on Si(111). Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 267–271. 3 indexed citations
15.
Krtschil, A., A. Dadgar, & A. Krost. (2002). Electrical microcharacterization of dislocation-related charges in GaN-based single layers by scanning probe microscopy techniques. Journal of Crystal Growth. 248. 542–547. 16 indexed citations
16.
Krtschil, A., H. De Witte, Marco Lisker, et al.. (1999). Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasma sources. Applied Physics Letters. 74(14). 2032–2034. 3 indexed citations
17.
Krtschil, A., Marco Lisker, H. De Witte, et al.. (1999). Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy. Materials Science and Engineering B. 59(1-3). 226–229. 5 indexed citations
18.
Krtschil, A., et al.. (1999). Influence of Carbon Doping on the Photoconductivity in GaN Layers. physica status solidi (b). 216(1). 593–597. 1 indexed citations
19.
Krtschil, A., H. De Witte, Marco Lisker, et al.. (1999). Incorporation of Deep Defects in GaN Induced by Doping and Implantation Processes. physica status solidi (b). 216(1). 587–591. 5 indexed citations
20.
Meister, D., I. Dirnstorfer, G. Steude, et al.. (1997). Electrical and optical properties of p-SiC/n-GaN heterostructures. Materials Science and Engineering B. 50(1-3). 302–306. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by B. Meyler Breakdown of academic impact, for papers by L. Görgens Breakdown of academic impact, for papers by Shinya Nunoue Breakdown of academic impact, for papers by Michael W. Moseley Breakdown of academic impact, for papers by J. Baur Breakdown of academic impact, for papers by Marc P. Hoffmann Breakdown of academic impact, for papers by Jong Hyeob Baek Breakdown of academic impact, for papers by Masahiro Horita Breakdown of academic impact, for papers by Jordan D. Greenlee Breakdown of academic impact, for papers by Lindsay Hussey
Rankless by CCL
2026