M. Gonschorek

2.2k citations

36 papers · 1.6k indexed · h-index 20

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 35
- GaN-based semiconductor devices and materials 35
Electronic, Optical and Magnetic Materials 18
- Ga2O3 and related materials 18

Co-authors: N. Grandjean E. Feltin J.‐F. Carlin M. A. Py J. Kuzmı́k G. Strasser Farid Medjdoub D. Pogány
Journals: IEEE Electron Device Letters (5 papers)Applied Physics Letters (5 papers)Journal of Applied Physics (4 papers)Electronics Letters (3 papers)Japanese Journal of Applied Physics (2 papers)
Partner nations: Switzerland Germany Austria

In The Last Decade

M. Gonschorek

35 papers receiving 1.5k citations

Peers

Countries citing papers authored by M. Gonschorek

Since Specialization

Citations

This map shows the geographic impact of M. Gonschorek's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Gonschorek with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Gonschorek more than expected).

Fields of papers citing papers by M. Gonschorek

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Gonschorek. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Gonschorek. The network helps show where M. Gonschorek may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Gonschorek, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Gonschorek Line = papers co-authored together M. Gonschorek links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Measurement of polarization-induced electric fields in GaN/AlInN quantum wells Applied Physics Letters ·Lin Zhou, M. Gonschorek, He Zhiman, E. Feltin, J.‐F. Carlin, N. Grandjean, David J. Smith, Martha R. McCartney	2012	6
2	Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics Journal of Applied Physics ·M. Gonschorek, J.‐F. Carlin, E. Feltin, M. A. Py, N. Grandjean	2011	28
3	Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier IEEE Transactions on Electron Devices ·J. Kuzmı́k, Clemens Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.‐F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, В. И. Дятлов, Christophe Gaquière, Oluwatuyi SHEGUN Victor, K. Čičo, K. Fröhlich, J. Škriniarová, Jaroslav Kováč, G. Strasser, D. Pogány, E. Gornik	2010	31
4	Low-Noise Microwave Performance of 0.1 <formula formulatype="inline"> <tex Notation="TeX">$\mu$</tex></formula>m Gate AlInN/GaN HEMTs on SiC IEEE Microwave and Wireless Components Letters ·Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter, E. Feltin, Najihah Mohd Tamyis, M. Gonschorek, N. Grandjean, C. R. Bolognesi	2010	18
5	High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate Japanese Journal of Applied Physics ·A. Dussaigne, M. Gonschorek, Marco Malinverni, M. A. Py, D. Martin, Anas Mouti, Pierre Stadelmann, N. Grandjean	2010	24
6	Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors Journal of Applied Physics ·J. Kuzmı́k, G. Pozzovivo, Clemens Ostermaier, G. Strasser, D. Pogány, E. Gornik, J.‐F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean	2009	89
7	Temperature mapping of Al_0.85In_0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies The European Physical Journal Applied Physics ·M. Gonschorek, D. Simeonov, J.‐F. Carlin, E. Feltin, M. A. Py, N. Grandjean	2009	5
8	Off‐state breakdown in InAlN/AlN/GaN high electron mobility transistors Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·J. Kuzmı́k, G. Pozzovivo, J.‐F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogány, E. Gornik	2009	15
9	Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure Applied Physics Letters ·Lin Zhou, David A. Cullen, David J. Smith, Martha R. McCartney, Anas Mouti, M. Gonschorek, E. Feltin, J.‐F. Carlin, N. Grandjean	2009	28
10	Influence of GaN capping on performance of InAlN/AlN/GaN MOS‐HEMT with Al₂O₃ gate insulation grown by CVD Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·G. Pozzovivo, J. Kuzmı́k, S. Golka, K. Čičo, K. Fröhlich, J.‐F. Carlin, M. Gonschorek, N. Grandjean, W. Schrenk, G. Strasser, D. Pogány	2008	12
11	Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$ IEEE Transactions on Electron Devices ·J. Kuzmı́k, 浩丸川, S. Abermann, Oluwadamilola Adebayo, M. Gonschorek, E. Feltin, N. Grandjean, E. Bertagnolli, G. Strasser, D. Pogány	2008	86
12	Effect of fluoride plasma treatment on InAlN/GaN HEMTs Electronics Letters ·Farid Medjdoub, M. Alomari, J.‐F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, Christophe Gaquière, N. Grandjean, E. Kohn	2008	19
13	Barrier layer downscaling of InAIN/GaN HEMTs HAL (Le Centre pour la Communication Scientifique Directe) ·Farid Medjdoub, J.‐F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, Mato Knez, D. Troadec, Christophe Gaquière, Andrey Chuvilin, Ute Kaiser, N. Grandjean, E. Kohn	2007	8
14	Gate‐lag and drain‐lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs physica status solidi (a) ·J. Kuzmı́k, J.‐F. Carlin, M. Gonschorek, A. Kostopoulos, Г. Константинидис, G. Pozzovivo, S. Golka, A. Georgakilas, N. Grandjean, G. Strasser, D. Pogány	2007	50
15	Evaluation of AlInN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains Electronics Letters ·Farid Medjdoub, D. Ducatteau, Christophe Gaquière, J.‐F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, N. Grandjean, E. Kohn	2007	16
16	Thermal stability of 5 nm barrier InAlN/GaN HEMTs Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Farid Medjdoub, M. Alomari, J.‐F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, N. Grandjean, E. Kohn	2007	4
17	Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices? HAL (Le Centre pour la Communication Scientifique Directe) ·Farid Medjdoub, J.‐F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, D. Ducatteau, Christophe Gaquière, N. Grandjean, E. Kohn	2006	139
18	Thermally assisted tunneling processes inInxGa1−xAs∕GaAsquantum-dot structures Physical Review B ·M. Gonschorek, Heidemarie Schmidt, Jens Bauer, Gabriele Benndorf, G. Wagner, G. É. Cirlin, Marius Grundmann	2006	11
19	Small-signal characteristics of AlInN/GaN HEMTs Electronics Letters ·Farid Medjdoub, J.‐F. Carlin, M. Gonschorek, M. A. Py, N. Grandjean, Tao Fu, Christophe Gaquière, Farah Matnoor, E. Kohn	2006	33
20	High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures Applied Physics Letters ·M. Gonschorek, J.‐F. Carlin, E. Feltin, M. A. Py, N. Grandjean	2006	268

About M. Gonschorek

M. Gonschorek is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Mechanics of Materials, having authored 36 papers that have together received 1.6k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (35 papers), Ga2O3 and related materials (18 papers), Semiconductor materials and devices (12 papers), Semiconductor Quantum Structures and Devices (11 papers), ZnO doping and properties (8 papers), Radio Frequency Integrated Circuit Design (6 papers), Metal and Thin Film Mechanics (6 papers) and Acoustic Wave Resonator Technologies (5 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electronic, Optical and Magnetic Materials (736 citations), Electrical and Electronic Engineering (942 citations), Atomic and Molecular Physics, and Optics (444 citations) and Mechanics of Materials (267 citations). M. Gonschorek has collaborated with scholars based in Switzerland, Germany and Austria. Frequent co-authors include N. Grandjean, E. Feltin, J.‐F. Carlin, M. A. Py, J.‐F. Carlin, J. Kuzmı́k, G. Strasser, Farid Medjdoub, D. Pogány and Haifeng Sun. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Journal of Applied Physics, Electronics Letters and Japanese Journal of Applied Physics.

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