K. Mutamba

524 total citations
35 papers, 368 citations indexed

About

K. Mutamba is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, K. Mutamba has authored 35 papers receiving a total of 368 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 11 papers in Condensed Matter Physics. Recurrent topics in K. Mutamba's work include Semiconductor Quantum Structures and Devices (14 papers), GaN-based semiconductor devices and materials (11 papers) and Semiconductor Lasers and Optical Devices (9 papers). K. Mutamba is often cited by papers focused on Semiconductor Quantum Structures and Devices (14 papers), GaN-based semiconductor devices and materials (11 papers) and Semiconductor Lasers and Optical Devices (9 papers). K. Mutamba collaborates with scholars based in Germany, Romania and Greece. K. Mutamba's co-authors include Oktay Yilmazoglu, D. Pavlidis, Dimitris Pavlidis, H.L. Hartnagel, H.L. Hartnagel, Alfons Dehé, А.А. Еvtukh, K. Fricke, H. L. Hartnagel and В. Г. Литовченко and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

K. Mutamba

30 papers receiving 348 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
K. Mutamba Germany	12	227	189	157	105	74	35	368
Н. С. Болтовец Ukraine	9	193 0.9×	181 1.0×	71 0.5×	63 0.6×	14 0.2×	59	304
M. Tokumitsu Japan	13	592 2.6×	163 0.9×	76 0.5×	61 0.6×	17 0.2×	69	619
H. Takahashi Japan	14	413 1.8×	183 1.0×	195 1.2×	59 0.6×	34 0.5×	55	520
Vytautas Janonis Lithuania	10	215 0.9×	141 0.7×	117 0.7×	80 0.8×	24 0.3×	40	303
Bettina Nechay United States	13	332 1.5×	237 1.3×	77 0.5×	168 1.6×	9 0.1×	31	460
Vladimir V. Talanov United States	9	148 0.7×	97 0.5×	170 1.1×	100 1.0×	15 0.2×	37	324
M. Zgirski Finland	9	94 0.4×	382 2.0×	328 2.1×	52 0.5×	14 0.2×	18	517
Bruno Guillet France	10	110 0.5×	57 0.3×	113 0.7×	35 0.3×	35 0.5×	33	266
N. V. Vostokov Russia	10	179 0.8×	207 1.1×	27 0.2×	78 0.7×	10 0.1×	60	294
Christoph S. Werner Germany	11	197 0.9×	211 1.1×	88 0.6×	73 0.7×	7 0.1×	26	346

Countries citing papers authored by K. Mutamba

Since Specialization

Citations

This map shows the geographic impact of K. Mutamba's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Mutamba with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Mutamba more than expected).

Fields of papers citing papers by K. Mutamba

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Mutamba. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Mutamba. The network helps show where K. Mutamba may publish in the future.

Co-authorship network of co-authors of K. Mutamba

This figure shows the co-authorship network connecting the top 25 collaborators of K. Mutamba. A scholar is included among the top collaborators of K. Mutamba based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Mutamba. K. Mutamba is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yilmazoglu, Oktay, et al.. (2008). First Observation of Bias Oscillations in GaN Gunn Diodes on GaN Substrate. IEEE Transactions on Electron Devices. 55(6). 1563–1567. 61 indexed citations

Neculoiu, D., A. Müller, A. Kostopoulos, et al.. (2007). Microwave FBAR Structures Fabricated using Micromachined GaN Membranes. IEEE MTT-S International Microwave Symposium digest. 877–880. 14 indexed citations

Yilmazoglu, Oktay, et al.. (2007). Measured negative differential resistivity for GaN Gunn diodes on GaN substrate. Electronics Letters. 43(8). 480–482. 36 indexed citations

Еvtukh, А.А., В. Г. Литовченко, Oktay Yilmazoglu, et al.. (2006). Formation of conducting nanochannels in diamond-like carbon films. Semiconductor Science and Technology. 21(9). 1326–1330. 18 indexed citations

Müller, A., D. Neculoiu, D. Vasilache, et al.. (2006). GaN micromachined FBAR structures for microwave applications. Superlattices and Microstructures. 40(4-6). 426–431. 20 indexed citations

Mutamba, K., Oktay Yilmazoglu, Cezary Sydlo, et al.. (2006). Technology aspects of GaN-based diodes for high-field operation. Superlattices and Microstructures. 40(4-6). 363–368. 16 indexed citations

Mutamba, K., Oktay Yilmazoglu, C. Sydlo, et al.. (2005). Technology and characteristics of GaN-based diodes for high-field operation. TUbilio (Technical University of Darmstadt). 1 indexed citations

Литовченко, В. Г., А.А. Еvtukh, Oktay Yilmazoglu, et al.. (2005). Gunn effect in field-emission phenomena. Journal of Applied Physics. 97(4). 12 indexed citations

Литовченко, В. Г., А.А. Еvtukh, Oktay Yilmazoglu, et al.. (2004). Quantum-size resonance tunneling in the field emission phenomenon. Journal of Applied Physics. 96(1). 867–877. 34 indexed citations

10.

Sağlam, M., et al.. (2003). Influence of polarization charges in Al0.4Ga0.6N/GaN barrier varactors. Applied Physics Letters. 82(2). 227–229. 10 indexed citations

11.

Hartnagel, H.L., et al.. (2003). MEMS based on III-V-compounds for sensing applications and optical communication. 139. 112–115. 3 indexed citations

12.

Sydlo, C., et al.. (2003). Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress. Microelectronics Reliability. 43(9-11). 1929–1933.

13.

Strassner, M., et al.. (2002). InGaAs-InP Fabry-Perot PIN receiver for dense wavelength division multiplex systems. 1. 65–66. 3 indexed citations

14.

Hartnagel, H.L., et al.. (2002). A basic quantum dot element: Proposal of a HBT-dot cell for high-packing density memory circuits. 139. 18–22. 1 indexed citations

15.

Mutamba, K., et al.. (2002). Micromachined 60 GHz GaAs power sensor with integrated receiving antenna. 3. 2235–2238. 5 indexed citations

16.

Hartnagel, H.L., et al.. (2002). III-V membrane structures for tunable Fabry-Perot filters and sensor applications. 44. 49–56.

17.

Mutamba, K., et al.. (2000). Concept of Nanometric High Density Charge Coupled Devices. Analog Integrated Circuits and Signal Processing. 24(1). 37–40. 2 indexed citations

18.

Mutamba, K., et al.. (2000). Interface tuning of the InAs/AlSb heterostructure-based quantum wells. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(4). 2279–2283. 1 indexed citations

19.

Strassner, M., V. Scheuer, J. Daleiden, et al.. (1999). Two-chip InGaAs-InP Fabry-Perot p-i-n receiver for WDM systems. IEEE Photonics Technology Letters. 11(2). 260–262. 18 indexed citations

20.

Mutamba, K., et al.. (1998). A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes. Applied Physics Letters. 72(13). 1629–1631. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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