J.R. Brews

5.5k total citations · 2 hit papers
71 papers, 4.4k citations indexed

About

J.R. Brews is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J.R. Brews has authored 71 papers receiving a total of 4.4k indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 6 papers in Materials Chemistry. Recurrent topics in J.R. Brews's work include Semiconductor materials and devices (46 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Semiconductor materials and interfaces (16 papers). J.R. Brews is often cited by papers focused on Semiconductor materials and devices (46 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Semiconductor materials and interfaces (16 papers). J.R. Brews collaborates with scholars based in United States, France and Japan. J.R. Brews's co-authors include E. H. Nicollian, Ronald D. Schrimpf, K.F. Galloway, Simon M. Sze, Wolf Fïchtner, M. Allenspach, J.L. Titus, C.F. Wheatley, K.K. Ng and R.L. Pease and has published in prestigious journals such as Physical Review Letters, The Journal of Chemical Physics and Journal of Applied Physics.

In The Last Decade

J.R. Brews

68 papers receiving 4.1k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

MOS /metal oxide semiconductor/ physics and technology

1982 1.8k citations E. H. Nicollian, J.R. Brews CERN Document Server (European Organization for Nuclear Research) profile →
A charge-sheet model of the MOSFET

1978 419 citations J.R. Brews Solid-State Electronics profile →

Peers

Countries citing papers authored by J.R. Brews

Since Specialization

Citations

This map shows the geographic impact of J.R. Brews's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.R. Brews with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.R. Brews more than expected).

Fields of papers citing papers by J.R. Brews

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.R. Brews. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.R. Brews. The network helps show where J.R. Brews may publish in the future.

Co-authorship network of co-authors of J.R. Brews

This figure shows the co-authorship network connecting the top 25 collaborators of J.R. Brews. A scholar is included among the top collaborators of J.R. Brews based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.R. Brews. J.R. Brews is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	MOSFET hand analysis using BSIM 2006 ·IEEE Circuits and Devices Magazine ·J.R. Brews	4
2	Models for subthreshold and above-threshold currents in 0.1-μm pocket n-MOSFETs for low-voltage applications 2002 ·IEEE Transactions on Electron Devices ·(unknown), J.R. Brews	19
3	Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation 2002 ·(unknown), Ronald D. Schrimpf, J.R. Brews, Dunbar P. Birnie, K.F. Galloway, (unknown), (unknown)	1
4	Crosstalk estimate for CMOS-terminated RLC interconnections 1997 ·IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications ·(unknown), J.R. Brews	5
5	Design for velocity saturated, short-channel CMOS drivers with simultaneous switching noise and switching time considerations 1996 ·IEEE Journal of Solid-State Circuits ·(unknown), J.R. Brews	19
6	Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs 1996 ·IEEE Transactions on Nuclear Science ·J.L. Titus, C.F. Wheatley, M. Allenspach, Ronald D. Schrimpf, D.I. Burton, J.R. Brews, K.F. Galloway, R.L. Pease	41
7	(Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide 1995 ·IEEE Transactions on Nuclear Science ·J.R. Brews, M. Allenspach, (unknown), J.L. Titus, C.F. Wheatley, R.L. Pease, (unknown), (unknown)	11
8	Overshoot control for two coupled RLC interconnections 1994 ·IEEE Transactions on Components Packaging and Manufacturing Technology Part B ·(unknown), J.R. Brews	8
9	A conceptual model of a single-event gate-rupture in power MOSFETs 1993 ·IEEE Transactions on Nuclear Science ·J.R. Brews, M. Allenspach, Ronald D. Schrimpf, K.F. Galloway, J.L. Titus, C.F. Wheatley	80
10	Digital implementation of the Q-C method for MOS measurements 1984 ·Solid-State Electronics ·(unknown), J.R. Brews, E. H. Nicollian	8
11	MOS /metal oxide semiconductor/ physics and technology breakdown → 1982 ·CERN Document Server (European Organization for Nuclear Research) ·E. H. Nicollian, J.R. Brews	1810
12	Threshold shifts due to nonuniform doping profiles in surface channel MOSFET's 1979 ·IEEE Transactions on Electron Devices ·J.R. Brews	28
13	Subthreshold behavior of uniformly and nonuniformly doped long-channel MOSFET 1979 ·IEEE Transactions on Electron Devices ·J.R. Brews	58
14	Generalized guide for MOSFET miniaturization 1979 ·J.R. Brews, Wolf Fïchtner, E. H. Nicollian, Simon M. Sze	12
15	A simplified high-frequency MOS capacitance formula 1977 ·Solid-State Electronics ·J.R. Brews	12
16	Avalanche punch-through erase (APTE) mode in dual-dielectric charge-storage (DDC) cells 1977 ·IEEE Transactions on Electron Devices ·D. Kahng, J.R. Brews, (unknown)	4
17	An improved high-frequency MOS capacitance formula 1974 ·Journal of Applied Physics ·J.R. Brews	47
18	A test for lateral nonuniformities in MOS devices using only capacitance curves 1973 ·Solid-State Electronics ·J.R. Brews, Alfredo López	27
19	Surface Potential Fluctuations Generated by Interface Charge Inhomogeneities in MOS Devices 1972 ·Journal of Applied Physics ·J.R. Brews	71
20	Electrochemical Potential as the Sum of Chemical and Electrical Potentials with a Generalization to a Wider Class of Perturbations 1971 ·The Journal of Chemical Physics ·J.R. Brews, C. J. Hwang	6

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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