A. Katz

1.9k total citations
99 papers, 1.4k citations indexed

About

A. Katz is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. Katz has authored 99 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 88 papers in Electrical and Electronic Engineering, 51 papers in Atomic and Molecular Physics, and Optics and 18 papers in Materials Chemistry. Recurrent topics in A. Katz's work include Semiconductor materials and devices (58 papers), Semiconductor Quantum Structures and Devices (35 papers) and Semiconductor materials and interfaces (32 papers). A. Katz is often cited by papers focused on Semiconductor materials and devices (58 papers), Semiconductor Quantum Structures and Devices (35 papers) and Semiconductor materials and interfaces (32 papers). A. Katz collaborates with scholars based in United States, Australia and Israel. A. Katz's co-authors include S. J. Pearton, F. Ren, W. C. Dautremont–Smith, C. R. Abernathy, J. R. Lothian, W. S. Hobson, T. R. Fullowan, B. E. Weir, S. N. G. Chu and M. Geva and has published in prestigious journals such as Nature, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. Katz

96 papers receiving 1.3k citations

Peers

Countries citing papers authored by A. Katz

Since Specialization

Citations

This map shows the geographic impact of A. Katz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Katz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Katz more than expected).

Fields of papers citing papers by A. Katz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Katz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Katz. The network helps show where A. Katz may publish in the future.

Co-authorship network of co-authors of A. Katz

This figure shows the co-authorship network connecting the top 25 collaborators of A. Katz. A scholar is included among the top collaborators of A. Katz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Katz. A. Katz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Patterned Electrical Conductance and Electrode Formation in Ion‐Implanted Diamond Films 1994 ·Journal of The Electrochemical Society ·B.I. Miller, R. Kalish, L. C. Feldman, A. Katz, N. Moriya, K. T. Short, Alice E. White	43
2	Rapid thermal low-pressure metal-organic chemical vapor deposition (RT-LPMOCVD) of semiconductor, dielectric and metal film onto InP and related materials 1994 ·Materials Science and Engineering R Reports ·(unknown), A. Katz	2
3	Dry etching of via connections for InP power devices 1993 ·Electronics Letters ·C. Constantine, C. Barratt, S. J. Pearton, F. Ren, J. R. Lothian, W. S. Hobson, A. Katz, Ling Yang, P.C. Chao	17
4	Dry etching of thin-film InN, AlN and GaN 1993 ·Semiconductor Science and Technology ·S. J. Pearton, C. R. Abernathy, F. Ren, J. R. Lothian, P. Wisk, A. Katz, C. Constantine	48
5	High temperature rapid thermal annealing of InP and related materials 1993 ·Materials Science and Engineering B ·S. J. Pearton, A. Katz	9
6	Indium phosphide and related materials : processing, technology, and devices 1992 ·A. Katz	53
7	Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A. 1992 ·A. Katz	1
8	Rapid isothermal processing for fabrication of GaAs-based electronic devices (HBTs) 1992 ·IEEE Transactions on Electron Devices ·S. J. Pearton, F. Ren, A. Katz, T. R. Fullowan, C. R. Abernathy, W. S. Hobson, R. F. Kopf	5
9	Growth of GaN, AlN and InN by Electron Cyclotron Resonance-Metal Organic Molecular Beam Epitaxy 1992 ·MRS Proceedings ·P. Wisk, C. R. Abernathy, S. J. Pearton, F. Ren, J. R. Lothian, A. Katz, K. S. Jones	3
10	Trilayer lift-off metallization process using low temperature deposited SiNx 1992 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·J. R. Lothian, F. Ren, S. J. Pearton, U. K. Chakrabarti, C. R. Abernathy, A. Katz	6
11	High-rate, anisotropic dry etching of InP in HI-based discharges 1992 ·Applied Physics Letters ·S. J. Pearton, U. K. Chakrabarti, A. Katz, F. Ren, T. R. Fullowan	18
12	Alloyed contacts to susceptor rapid thermal annealed Si-implanted InP 1991 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·A. Katz, S. J. Pearton	3
13	Self-aligned technology for tungsten-contacted InP-based etched mesa laser devices 1991 ·Applied Physics Letters ·A. Katz, S. J. Pearton, M. Geva	13
14	Highly doped In_0.52Al_0.48As growth and ohmic contact formation 1991 ·Semiconductor Science and Technology ·A. Katz, W. S. Hobson, S. N. G. Chu, B. E. Weir, S. J. Pearton, W. Savin	2
15	Pt/Ti Ohmic contact to p++-InGaAsP (1.3 μm) formed by rapid thermal processing 1990 ·Journal of Applied Physics ·A. Katz, Thomas Pottier, S. N. G. Chu, W. C. Dautremont–Smith, R. G. Sobers, (unknown)	31
16	Interfacial microstructure and electrical properties of the Pt/Ti ohmic contact in p-In0.53Ga0.47As formed by rapid thermal processing 1990 ·Journal of Applied Physics ·S. N. G. Chu, A. Katz, T. Boone, Thomas Pottier, V. G. Riggs, W. C. Dautremont–Smith, W. D. Johnston	41
17	Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts to p-InAs induced by rapid thermal processing 1990 ·Journal of Applied Physics ·A. Katz, S. N. G. Chu, B. E. Weir, W. C. Dautremont–Smith, R. A. Logan, (unknown), W. Savin, D. E. Harris	14
18	Tungsten metallization for stable and self-aligned InP-based laser devices 1990 ·Journal of Applied Physics ·A. Katz, S. J. Pearton, M. Geva	11
19	Relationship between thermal stress and structural properties of SrF2 films on (100) InP 1990 ·Applied Physics Letters ·(unknown), (unknown), A. Katz, A. J. Nelson, Steven C. Gebhard, A. B. Swartzlander	5
20	Hole trap level in Pt-Ti/p-InGaAs/n-InP heterostructures due to rapid thermal processing 1990 ·Applied Physics Letters ·K.L. Jiao, (unknown), (unknown), A. Katz	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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