C. A. King

1.5k total citations
54 papers, 1.0k citations indexed

About

C. A. King is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, C. A. King has authored 54 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 29 papers in Atomic and Molecular Physics, and Optics and 14 papers in Materials Chemistry. Recurrent topics in C. A. King's work include Semiconductor materials and interfaces (26 papers), Semiconductor materials and devices (24 papers) and Silicon and Solar Cell Technologies (22 papers). C. A. King is often cited by papers focused on Semiconductor materials and interfaces (26 papers), Semiconductor materials and devices (24 papers) and Silicon and Solar Cell Technologies (22 papers). C. A. King collaborates with scholars based in United States, Italy and Germany. C. A. King's co-authors include J. F. Gibbons, Judy L. Hoyt, C. M. Gronet, M. P. Scott, T. I. Kamins, D. B. Noble, J. Turner, L. C. Feldman, K. Nauka and N. Moriya and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

C. A. King

52 papers receiving 982 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. A. King United States 15 901 585 290 109 59 54 1.0k
L. A. Almeida United States 18 793 0.9× 500 0.9× 237 0.8× 82 0.8× 27 0.5× 72 845
L. C. Kimerling United States 16 1.1k 1.2× 556 1.0× 345 1.2× 151 1.4× 114 1.9× 47 1.2k
U. G�sele United States 11 791 0.9× 404 0.7× 371 1.3× 137 1.3× 59 1.0× 16 911
C. G. Tuppen United Kingdom 15 612 0.7× 506 0.9× 247 0.9× 92 0.8× 85 1.4× 42 785
J. Lundsgaard Hansen Denmark 17 638 0.7× 377 0.6× 343 1.2× 169 1.6× 93 1.6× 51 831
G. Brill United States 18 765 0.8× 500 0.9× 244 0.8× 59 0.5× 22 0.4× 68 819
Morio Inoue Japan 11 536 0.6× 165 0.3× 252 0.9× 65 0.6× 45 0.8× 55 620
W Murray Bullis United States 11 485 0.5× 291 0.5× 122 0.4× 134 1.2× 46 0.8× 23 603
G. Pelous France 16 647 0.7× 544 0.9× 153 0.5× 57 0.5× 95 1.6× 32 782
M. Martinka United States 14 441 0.5× 236 0.4× 165 0.6× 91 0.8× 35 0.6× 43 511

Countries citing papers authored by C. A. King

Since Specialization
Citations

This map shows the geographic impact of C. A. King's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. A. King with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. A. King more than expected).

Fields of papers citing papers by C. A. King

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. A. King. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. A. King. The network helps show where C. A. King may publish in the future.

Co-authorship network of co-authors of C. A. King

This figure shows the co-authorship network connecting the top 25 collaborators of C. A. King. A scholar is included among the top collaborators of C. A. King based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. A. King. C. A. King is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
King, C. A., et al.. (2008). Monolithic germanium SWIR imaging array. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6940. 69400N–69400N. 5 indexed citations
2.
Suh, Yang-Gun, Malcolm S. Carroll, R. Lévy, et al.. (2005). Implantation and Activation of High Concentrations of Boron in Germanium. IEEE Transactions on Electron Devices. 52(11). 2416–2421. 26 indexed citations
3.
King, C. A., et al.. (2004). Forearm Musculofasciocutaneous Flap to Cover Glenohumeral Arthrodesis Hardware During Reconstruction of the Flail Upper Extremity. Annals of Plastic Surgery. 52(2). 212–215. 1 indexed citations
4.
Carroll, Malcolm S. & C. A. King. (2003). Dependence of the electron minority carrier lifetime on interstitial oxygen and substitutional carbon in pseudomorphically strained SiGeC heterostructures. Journal of Applied Physics. 93(3). 1656–1660. 2 indexed citations
5.
Mastrapasqua, M., Pierpaolo Palestri, A. Pacelli, et al.. (2002). Minimizing thermal resistance and collector-to-substrate capacitance in SiGe BiCMOS on SOI. IEEE Electron Device Letters. 23(3). 145–147. 4 indexed citations
6.
Carroll, Michael S., M. Frei, Ts. Ivanov, et al.. (2002). BiCMOS technology for mixed-digital, analog, and RF applications. IEEE Microwave Magazine. 3(2). 44–55. 12 indexed citations
7.
King, C. A., et al.. (1998). Lateral etching and filling of high aspect ratio nanometer-size cavities for silicon device structures. Applied Physics Letters. 73(20). 2947–2949. 8 indexed citations
8.
King, C. A., et al.. (1996). In situ arsenic-doped polycrystalline silicon as a low thermal budget emitter contact for Si/Si1−xGex heterojunction bipolar transistors. Applied Physics Letters. 68(2). 226–228. 2 indexed citations
9.
King, C. A., D. J. Eaglesham, T. Sorsch, et al.. (1994). Ultrashallow p+-n junctions formed by diffusion from an RTCVD-deposited B:Ge layer. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2091. 122–122. 3 indexed citations
10.
Moriya, N., L. C. Feldman, H. S. Luftman, & C. A. King. (1994). Electrical and structural characterization of boron-doped Si1−xGex strained layers. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(1). 383–386. 4 indexed citations
11.
Ross, F. M., R. Hull, D. Bahnck, et al.. (1993). Changes in electrical device characteristics during the in situ formation of dislocations. Applied Physics Letters. 62(12). 1426–1428. 37 indexed citations
12.
Moriya, N., C. A. King, L. C. Feldman, et al.. (1992). Boron Diffusion in Si1−x Gex Strained Layers. MRS Proceedings. 281.
13.
Jalali, Bahram, C. A. King, G. S. Higashi, et al.. (1991). Current gain enhancement in bipolar transistors by low-energy ion beam modification of the polycrystalline silicon emitter. Applied Physics Letters. 58(18). 2009–2011. 2 indexed citations
14.
Woicik, J. C., C. E. Bouldin, M. I. Bell, et al.. (1991). Conservation of bond lengths in strained Ge-Si layers. Physical review. B, Condensed matter. 43(3). 2419–2422. 52 indexed citations
15.
King, C. A., Judy L. Hoyt, D. B. Noble, et al.. (1989). Epitaxial Growth of Sil-xGex/Si Heterostructures by Limited Reaction Processing for Minority Carrier Device Applications. MRS Proceedings. 146. 6 indexed citations
16.
Kamins, T. I., K. Nauka, Judy L. Hoyt, et al.. (1989). Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors. IEEE Electron Device Letters. 10(11). 503–505. 48 indexed citations
17.
King, C. A., Judy L. Hoyt, D. B. Noble, et al.. (1989). Electrical and material quality of Si/sub 1-x/Ge/sub x//Si p-N heterojunctions produced by limited reaction processing. IEEE Electron Device Letters. 10(4). 159–161. 29 indexed citations
18.
King, C. A., et al.. (1988). Electrical characterization of in-situ epitaxially grown Si p-n junctions fabricated using limited reaction processing. IEEE Electron Device Letters. 9(5). 229–231. 14 indexed citations
19.
Sturm, James C., et al.. (1986). In-situ epitaxial silicon—oxide-doped polysilicon structures for MOS field-effect transistors. IEEE Electron Device Letters. 7(10). 577–579. 12 indexed citations
20.
Gronet, C. M., C. A. King, & J. F. Gibbons. (1986). Growth of GeSi/Si Strained-layer Superlattices Using Limited Reaction Processing. MRS Proceedings. 71. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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