J. C. Bean

10.4k total citations · 2 hit papers
199 papers, 7.4k citations indexed

About

J. C. Bean is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. C. Bean has authored 199 papers receiving a total of 7.4k indexed citations (citations by other indexed papers that have themselves been cited), including 137 papers in Electrical and Electronic Engineering, 124 papers in Atomic and Molecular Physics, and Optics and 68 papers in Materials Chemistry. Recurrent topics in J. C. Bean's work include Semiconductor materials and interfaces (78 papers), Silicon Nanostructures and Photoluminescence (50 papers) and Semiconductor materials and devices (49 papers). J. C. Bean is often cited by papers focused on Semiconductor materials and interfaces (78 papers), Silicon Nanostructures and Photoluminescence (50 papers) and Semiconductor materials and devices (49 papers). J. C. Bean collaborates with scholars based in United States, Germany and Brazil. J. C. Bean's co-authors include R. Hull, Maryellen Weimer, J. M. Poate, T. P. Pearsall, J. M. Gibson, Ian Robinson, L. J. Peticolas, R. T. Tung, A. T. Fiory and S. Nakahara and has published in prestigious journals such as Science, Journal of the American Chemical Society and Physical Review Letters.

In The Last Decade

J. C. Bean

193 papers receiving 6.8k citations

Hit Papers

Engaging Ideas: The Professor's Guide to Integrating Writ... 1984 2026 1998 2012 1996 1984 250 500 750

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. C. Bean United States 43 4.4k 4.1k 2.2k 995 854 199 7.4k
Richard H. Williams United States 42 1.5k 0.3× 1.2k 0.3× 1.1k 0.5× 386 0.4× 186 0.2× 215 6.1k
Robert L. Johnson Germany 47 4.7k 1.1× 3.4k 0.8× 3.2k 1.4× 1.2k 1.2× 69 0.1× 286 8.5k
Catherine H. Crouch United States 25 1.2k 0.3× 668 0.2× 1.2k 0.6× 1.1k 1.1× 2.4k 2.8× 42 5.4k
A. M. Fox United Kingdom 42 3.4k 0.8× 4.3k 1.0× 1.9k 0.8× 779 0.8× 77 0.1× 217 6.8k
R. Smoluchowski United States 36 841 0.2× 1.1k 0.3× 3.1k 1.4× 494 0.5× 132 0.2× 179 6.8k
Jun Xu China 39 2.6k 0.6× 1.5k 0.4× 3.2k 1.4× 619 0.6× 146 0.2× 348 5.9k
Paul Lee Singapore 46 2.4k 0.5× 1.7k 0.4× 2.1k 0.9× 727 0.7× 87 0.1× 274 7.4k
Eric E. Fullerton United States 70 4.1k 0.9× 14.6k 3.6× 4.9k 2.2× 2.6k 2.6× 104 0.1× 410 19.5k
Paul J. Kelly Netherlands 61 4.8k 1.1× 8.1k 2.0× 8.1k 3.7× 1.3k 1.3× 53 0.1× 253 15.4k
Kurt Becker United States 31 1.2k 0.3× 970 0.2× 482 0.2× 201 0.2× 350 0.4× 162 3.4k

Countries citing papers authored by J. C. Bean

Since Specialization
Citations

This map shows the geographic impact of J. C. Bean's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. Bean with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. Bean more than expected).

Fields of papers citing papers by J. C. Bean

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. Bean. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. Bean. The network helps show where J. C. Bean may publish in the future.

Co-authorship network of co-authors of J. C. Bean

This figure shows the co-authorship network connecting the top 25 collaborators of J. C. Bean. A scholar is included among the top collaborators of J. C. Bean based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. C. Bean. J. C. Bean is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bean, J. C., et al.. (2013). Deep Learning in Intermediate Microeconomics: Using Scaffolding Assignments to Teach Theory and Promote Transfer. The Journal of Economic Education. 44(2). 142–157. 20 indexed citations
2.
3.
Harriott, L. R., et al.. (2006). First Optically Active Molecular Electronic Wires. Organic Letters. 8(3). 355–358. 41 indexed citations
4.
Bean, J. C., et al.. (2005). Transforming WAC through a Discourse-Based Approach to University Outcomes Assessment. 16(1). 5–21. 8 indexed citations
6.
Hull, R., et al.. (1998). In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures. Microscopy and Microanalysis. 4(3). 294–307. 29 indexed citations
7.
Stach, E.A., R. Hull, R. M. Tromp, et al.. (1998). Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures. Journal of Applied Physics. 83(4). 1931–1937. 31 indexed citations
8.
Hull, R., J. C. Bean, L. J. Peticolas, et al.. (1994). Misfit dislocation propagation kinetics in GexSi1−x/Ge(100) heterostructures. Applied Physics Letters. 65(3). 327–329. 25 indexed citations
9.
Ross, F. M., R. Hull, D. Bahnck, et al.. (1992). Insitu transmission electron microscopy measurements of the electrical and structural properties of strained layer GeSi/Si pn junctions. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(4). 2008–2012. 8 indexed citations
10.
Xie, Y. H. & J. C. Bean. (1990). Heteroepitaxy of GexSi1−x on porous Si substrates. Journal of Applied Physics. 67(2). 792–795. 7 indexed citations
11.
Eaglesham, D. J., D. M. Maher, E. P. Kvam, J. C. Bean, & C. J. Humphreys. (1989). New Source of Dislocations inGexSi1x/Si(100)Strained Epitaxial Layers. Physical Review Letters. 62(2). 187–190. 31 indexed citations
12.
Bean, J. C., L. J. Schowalter, & Insulation Division. (1988). Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy. Electrochemical Society eBooks. 17 indexed citations
13.
Bean, J. C.. (1986). Recent developments in the strained layer epitaxy of germanium–silicon alloys. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(6). 1427–1429. 31 indexed citations
14.
Gossmann, H.‐J., J. C. Bean, L. C. Feldman, E.G. McRae, & Ian Robinson. (1985). 7×7 Reconstruction of Ge(111) Surfaces under Compressive Strain. Physical Review Letters. 55(10). 1106–1109. 100 indexed citations
15.
Fiory, A. T., et al.. (1983). Tetragonal Strain in MBE GexSi1-x Films Grown on (100) Si Observed by Ion Channeling and X-Ray Diffraction. MRS Proceedings. 25. 5 indexed citations
16.
Bean, J. C. & G. A. Rozgonyi. (1982). Patterned silicon molecular beam epitaxy with submicron lateral resolution. Applied Physics Letters. 41(8). 752–755. 15 indexed citations
17.
Bean, J. C.. (1981). Silicon molecular beam epitaxy as a VLSI processing technique. 6–13. 6 indexed citations
18.
Auston, D. H., A. M. Johnson, P. R. Smith, et al.. (1980). Picosecond optoelectronics with amorphous semiconductors (A). Journal of the Optical Society of America A. 70. 605. 2 indexed citations
19.
Bean, J. C.. (1979). A Method of Peer-Evaluation of Student Writing. College Composition and Communication. 30(3). 301–301. 4 indexed citations
20.
Bean, J. C., H. J. Leamy, J. M. Poate, et al.. (1978). Epitaxial laser crystallization of thin-film amorphous silicon. Applied Physics Letters. 33(3). 227–230. 49 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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