R. Hull

11.1k total citations · 2 hit papers
294 papers, 8.5k citations indexed

About

R. Hull is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, R. Hull has authored 294 papers receiving a total of 8.5k indexed citations (citations by other indexed papers that have themselves been cited), including 205 papers in Electrical and Electronic Engineering, 168 papers in Atomic and Molecular Physics, and Optics and 87 papers in Materials Chemistry. Recurrent topics in R. Hull's work include Semiconductor Quantum Structures and Devices (92 papers), Semiconductor materials and interfaces (79 papers) and Semiconductor materials and devices (75 papers). R. Hull is often cited by papers focused on Semiconductor Quantum Structures and Devices (92 papers), Semiconductor materials and interfaces (79 papers) and Semiconductor materials and devices (75 papers). R. Hull collaborates with scholars based in United States, Germany and France. R. Hull's co-authors include J. C. Bean, R. M. Tromp, Liang Li, Charles C. Chusuei, Yangchuan Xing, M. J. Williamson, Philippe M. Vereecken, J. C. Bean, Frances M. Ross and L. J. Peticolas and has published in prestigious journals such as Nature, Physical Review Letters and Advanced Materials.

In The Last Decade

R. Hull

287 papers receiving 8.2k citations

Hit Papers

Properties of Crystalline Silicon 1999 2026 2008 2017 1999 2003 200 400 600

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Hull United States 47 5.1k 4.1k 2.8k 1.5k 774 294 8.5k
U. Pietsch Germany 32 2.5k 0.5× 2.0k 0.5× 2.7k 0.9× 1.4k 1.0× 620 0.8× 357 6.4k
J. Melngailis United States 39 3.0k 0.6× 1.5k 0.4× 2.2k 0.8× 2.2k 1.5× 470 0.6× 161 6.0k
Michael Bauer Germany 46 3.0k 0.6× 3.3k 0.8× 1.9k 0.7× 1.8k 1.2× 475 0.6× 183 7.6k
Milos Toth Australia 40 2.2k 0.4× 2.2k 0.5× 4.0k 1.4× 1.5k 1.0× 563 0.7× 197 6.4k
Toh‐Ming Lu United States 52 5.8k 1.1× 2.3k 0.6× 4.9k 1.7× 1.6k 1.1× 1.0k 1.3× 386 10.5k
V. Holý Czechia 40 3.1k 0.6× 4.7k 1.1× 4.5k 1.6× 1.3k 0.9× 1.9k 2.5× 355 8.7k
Harold J. W. Zandvliet Netherlands 45 2.7k 0.5× 3.7k 0.9× 3.5k 1.3× 2.3k 1.6× 650 0.8× 339 8.4k
J. Silcox United States 47 3.3k 0.7× 2.4k 0.6× 4.4k 1.6× 1.8k 1.2× 1.3k 1.7× 176 9.3k
B. S. Swartzentruber United States 43 2.8k 0.6× 4.7k 1.1× 1.9k 0.7× 1.6k 1.1× 623 0.8× 98 6.6k
Martin Hÿtch France 35 2.6k 0.5× 1.8k 0.4× 4.3k 1.5× 1.3k 0.9× 676 0.9× 148 7.4k

Countries citing papers authored by R. Hull

Since Specialization
Citations

This map shows the geographic impact of R. Hull's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Hull with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Hull more than expected).

Fields of papers citing papers by R. Hull

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Hull. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Hull. The network helps show where R. Hull may publish in the future.

Co-authorship network of co-authors of R. Hull

This figure shows the co-authorship network connecting the top 25 collaborators of R. Hull. A scholar is included among the top collaborators of R. Hull based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Hull. R. Hull is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gall, Daniel, et al.. (2022). In Situ High-Temperature TEM Observation of Inconel Corrosion by Molten Chloride Salts with N 2 , O 2 , or H 2 O. Journal of The Electrochemical Society. 169(9). 93504–93504. 1 indexed citations
2.
Park, Jeung Hun, et al.. (2018). In situ EC-TEM Studies of Metal Thin Film Corrosion in Liquid Solutions at Elevated Temperatures. Microscopy and Microanalysis. 24(S1). 254–255. 9 indexed citations
3.
Zhang, Qing, Alexander B. Brady, Christopher J. Pelliccione, et al.. (2017). Investigation of Structural Evolution of Li1.1V3O8 by In Situ X-ray Diffraction and Density Functional Theory Calculations. Chemistry of Materials. 29(5). 2364–2373. 42 indexed citations
4.
Chee, See Wee, et al.. (2016). An In Situ Transmission Electron Microscopy Study of Localized Corrosion on Aluminum. MRS Advances. 1(25). 1877–1882. 4 indexed citations
5.
Gray, Jennifer L., et al.. (2005). Beyond the heteroepitaxial quantum dot: Self-assembling complex nanostructures controlled by strain and growth kinetics. Physical Review B. 72(15). 47 indexed citations
6.
Robertson, I.M., Mark A. Kirk, U. Messerschmidt, Judith C. Yang, & R. Hull. (2005). Introduction. Journal of materials research/Pratt's guide to venture capital sources. 20(7). 1617–1617. 2 indexed citations
7.
Xia, Guangrui, Hasan M. Nayfeh, Minjoo Larry Lee, et al.. (2004). Impact of Ion Implantation Damage and Thermal Budget on Mobility Enhancement in Strained-Si N-Channel MOSFETs. IEEE Transactions on Electron Devices. 51(12). 2136–2144. 17 indexed citations
8.
Williamson, M. J., et al.. (2003). Dynamic microscopy of nanoscale cluster growth at the solid–liquid interface. Nature Materials. 2(8). 532–536. 627 indexed citations breakdown →
9.
Vandervelde, Thomas E., Piyush Kumar, Takeshi Kobayashi, et al.. (2003). Growth of quantum fortress structures in Si1−xGex/Si via combinatorial deposition. Applied Physics Letters. 83(25). 5205–5207. 29 indexed citations
10.
Chráska, Tomáš, et al.. (2001). Deep submicron microcontact printing on planar and curved substrates utilizing focused ion beam fabricated printheads. Applied Physics Letters. 78(7). 981–983. 25 indexed citations
11.
Hull, R., et al.. (1998). In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures. Microscopy and Microanalysis. 4(3). 294–307. 29 indexed citations
12.
Stach, E.A., R. Hull, R. M. Tromp, et al.. (1998). Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures. Journal of Applied Physics. 83(4). 1931–1937. 31 indexed citations
13.
Stevie, F. A., et al.. (1995). Applications of focused ion beams in microelectronics production, design and development. Surface and Interface Analysis. 23(2). 61–68. 58 indexed citations
14.
Hull, R., J. C. Bean, L. J. Peticolas, et al.. (1994). Misfit dislocation propagation kinetics in GexSi1−x/Ge(100) heterostructures. Applied Physics Letters. 65(3). 327–329. 25 indexed citations
15.
Albrecht, M., H. P. Strunk, R. Hull, & J. M. Bonar. (1993). Dislocation glide in {110} planes in semiconductors with diamond or zinc-blende structure. Applied Physics Letters. 62(18). 2206–2208. 34 indexed citations
16.
Hull, R., R. A. Logan, B. E. Weir, & J. M. Vandenberg. (1993). Misfit dislocation microstructure and kinetics for InxGa1−xAs/InP(100) and (110) interfaces under tensile and compressive stress. Applied Physics Letters. 63(11). 1504–1506. 13 indexed citations
17.
Ross, F. M., R. Hull, D. Bahnck, et al.. (1992). Insitu transmission electron microscopy measurements of the electrical and structural properties of strained layer GeSi/Si pn junctions. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(4). 2008–2012. 8 indexed citations
18.
Windt, David L., R. Hull, & W. K. Waskiewicz. (1991). The Physics of X-Ray Multilayer Structures. WC1–WC1. 12 indexed citations
19.
Pearsall, T. P., J. M. Vandenberg, R. Hull, & J. M. Bonar. (1989). Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge. Physical Review Letters. 63(19). 2104–2107. 77 indexed citations
20.
Carey, K. W., R. Hull, J.E. Fouquet, F. G. Kellert, & G.R. Trott. (1987). Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy. Applied Physics Letters. 51(12). 910–912. 40 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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