Yao Ma

463 total citations
65 papers, 303 citations indexed

About

Yao Ma is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Yao Ma has authored 65 papers receiving a total of 303 indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 12 papers in Materials Chemistry. Recurrent topics in Yao Ma's work include Semiconductor materials and devices (32 papers), Silicon Carbide Semiconductor Technologies (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). Yao Ma is often cited by papers focused on Semiconductor materials and devices (32 papers), Silicon Carbide Semiconductor Technologies (28 papers) and Integrated Circuits and Semiconductor Failure Analysis (22 papers). Yao Ma collaborates with scholars based in China, United States and India. Yao Ma's co-authors include Min Gong, Zhimei Yang, Mingmin Huang, B. E. Weir, Bo Gao, Md Ashraful Alam, P. J. Silvėrman, Peng Dong, Yun Li and Xin Zhao and has published in prestigious journals such as Angewandte Chemie International Edition, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Yao Ma

53 papers receiving 288 citations

Peers

Yao Ma
D. Manger Germany
J.-K. Woo South Korea
A. Chou United States
Sudipta Chakraborty Australia
H. van den Boom Netherlands
S. Swirhun United States
Paul M. Jordan Germany
George B. Norris United States
S. Wevering Germany
Yuan Taur United States
D. Manger Germany
Yao Ma
Citations per year, relative to Yao Ma Yao Ma (= 1×) peers D. Manger

Countries citing papers authored by Yao Ma

Since Specialization
Citations

This map shows the geographic impact of Yao Ma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yao Ma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yao Ma more than expected).

Fields of papers citing papers by Yao Ma

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yao Ma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yao Ma. The network helps show where Yao Ma may publish in the future.

Co-authorship network of co-authors of Yao Ma

This figure shows the co-authorship network connecting the top 25 collaborators of Yao Ma. A scholar is included among the top collaborators of Yao Ma based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yao Ma. Yao Ma is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Huang, Mingmin, et al.. (2025). Study on False Turn-On in IGBT With Floating p-Well and Comparing With Improved Structures. IEEE Transactions on Electron Devices. 72(3). 1264–1269.
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Tan, Huan, Yumeng Yang, Zhimei Yang, et al.. (2025). Effects of Ge ion irradiation on dielectric properties of Si-based PiN diodes. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 563. 165692–165692.
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Ma, Yao, et al.. (2025). Ultrafast construction of CFRP surface patterns via picosecond UV laser for superior adhesion. Applied Surface Science. 709. 163732–163732. 1 indexed citations
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Li, Yun, et al.. (2024). Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 550. 165319–165319. 4 indexed citations
9.
Li, Yun, et al.. (2024). Enhanced Performance of Vertical β-Ga₂O₃ Schottky Barrier Diodes Through 212-MeV Low-Fluence Ge Ion Irradiation. IEEE Transactions on Electron Devices. 71(12). 7366–7371. 4 indexed citations
10.
Ma, Yao, Mingmin Huang, Sijie Zhang, et al.. (2024). Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 549. 165288–165288. 4 indexed citations
11.
Wang, Jingqi, Tianyu Chen, Yao Ma, et al.. (2024). Annealing influence on stoichiometry and band alignment of 4H-SiC/SiO2 interface evaluated by x-ray photoelectron spectroscopy. Semiconductor Science and Technology. 39(11). 115007–115007. 1 indexed citations
12.
Huang, Mingmin, et al.. (2024). Mechanism and Physical Model of the Single-Event Leakage Current for SiC JBS Diodes. IEEE Transactions on Nuclear Science. 71(10). 2252–2259. 2 indexed citations
13.
Ma, Yao, et al.. (2024). A study on natural ventilation of dormitories for college students in northeast China during spring: A case of linear-shaped dormitory buildings. Journal of Building Engineering. 90. 109402–109402. 2 indexed citations
14.
Lu, Kailei, et al.. (2023). Highly transparent Sm2Zr2O7 ceramics with excellent dielectric performance. Applied Physics Letters. 123(4). 7 indexed citations
15.
Huang, Mingmin, Rui Li, Zhimei Yang, et al.. (2021). A Multiepi Superjunction MOSFET With a Lightly Doped MOS-Channel Diode for Improving Reverse Recovery. IEEE Transactions on Electron Devices. 68(5). 2401–2407. 17 indexed citations
16.
Hu, Min, Mingmin Huang, Rui Li, et al.. (2021). Semi-superjunction IGBT with a relatively high-resistance p-top region for low on-state and turn-off losses. Superlattices and Microstructures. 158. 107025–107025. 3 indexed citations
17.
Li, Rui, Mingmin Huang, Min Hu, et al.. (2021). Superjunction MOSFET with a trench contact on partly relatively lightly doped P-pillar for excellent reverse recovery. Semiconductor Science and Technology. 36(10). 105002–105002.
18.
Huang, Mingmin, Zhimei Yang, Shaomin Wang, et al.. (2020). Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 478. 5–10. 5 indexed citations
19.
Huang, Mingmin, et al.. (2020). Snapback‐free reverse conducting IGBT with p‐float and n‐ring surrounding trench‐collector. Electronics Letters. 56(24). 1337–1340. 1 indexed citations
20.
Li, Rui, Mingmin Huang, Zhimei Yang, Yao Ma, & Min Gong. (2019). Carrier‐storage‐enhanced superjunction IGBT with n‐Si and p‐3C‐SiC pillars. Electronics Letters. 55(25). 1353–1355. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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