Y. H. Xie

1.7k citations

32 papers · 1.4k indexed · 1 hit paper · h-index 14

Electrical and Electronic Engineering top 5%
Atomic and Molecular Physics, and Optics top 5%
Materials Chemistry top 10%
Biomedical Engineering top 10%
Condensed Matter Physics

Co-authors: Eugene A. Fitzgerald Y. J. Mii B. E. Weir Jürgen Michel A. R. Kortan D. Brasen Don Monroe P. J. Silvėrman
Topics: Semiconductor materials and devices (15 papers)Semiconductor Quantum Structures and Devices (14 papers)Silicon Nanostructures and Photoluminescence (10 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Materials Chemistry
Journals: Physical Review Letters Physical review. B, Condensed matter Applied Physics Letters
Partner nations: United States Germany Austria

In The Last Decade

Y. H. Xie

31 papers receiving 1.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

1991 563 citations Eugene A. Fitzgerald, Y. H. Xie et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by Y. H. Xie

Since Specialization

Citations

This map shows the geographic impact of Y. H. Xie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. H. Xie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. H. Xie more than expected).

Fields of papers citing papers by Y. H. Xie

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. H. Xie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. H. Xie. The network helps show where Y. H. Xie may publish in the future.

Co-authorship network of co-authors of Y. H. Xie

This figure shows the co-authorship network connecting the top 25 collaborators of Y. H. Xie. A scholar is included among the top collaborators of Y. H. Xie based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. H. Xie. Y. H. Xie is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	A 7.3–14.2 GHz 6.3 mW LNA with 9.4±0.6 dB gain using transformer feedback and peak-gain distribution 2024 ·Microelectronics Journal ·Y. H. Xie,(unknown)	0
2	Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in aSi/SiGeQuantum Well 2011 ·Physical Review Letters ·Tzu‐Ming Lu,W. Pan,D. C. Tsui,(unknown),(unknown),Y. H. Xie	5
3	Capacitively induced high mobility two-dimensional electron gas in undoped Si∕Si1−xGex heterostructures with atomic-layer-deposited dielectric 2007 ·Applied Physics Letters ·Tzu‐Ming Lu,J. Liu,Jinwon Kim,Keji Lai,D. C. Tsui,Y. H. Xie	13
4	Experimental investigation of Hall mobility in Ge/Si quantum dot superlattices 2004 ·Applied Physics Letters ·Yang Bao,Alexander A. Balandin,Jianlin Liu,J. Liu,Y. H. Xie	12
5	Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells 2000 ·Physical review. B, Condensed matter ·Madhavi Srinivasan,V. Venkataraman,James C. Sturm,Y. H. Xie	13
6	Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si 1999 ·Applied Physics Letters ·Leonid P. Rokhinson,D. C. Tsui,J. L. Benton,Y. H. Xie	23
7	Effect of tensile strain on B-type step energy on Si(001)-(2×1) surfaces determined by switch-kink counting 1999 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Eric R. Heller,(unknown),J. P. Pelz,Y. H. Xie,P. J. Silvėrman	3
8	SiGe field effect transistors 1999 ·Materials Science and Engineering R Reports ·Y. H. Xie	20
9	Influence of strain on semiconductor thin film epitaxy 1997 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Eugene A. Fitzgerald,Srikanth Samavedam,Y. H. Xie,Laura M. Giovane	61
10	Strain field imaging on Si/SiGe(001)-(2×1) surfaces by low-energy electron microscopy and scanning tunneling microscopy 1996 ·Applied Physics Letters ·(unknown),J. P. Pelz,(unknown),I. S. T. Tsong,Y. H. Xie,P. J. Silvėrman	8
11	Photodegradation of the luminescence of porous silicon during pulsed excitation 1995 ·Semiconductors ·Y. H. Xie,I. N. Germanenko,(unknown),С. В. Гапоненко	4
12	Antidot superlattices in two-dimensional hole gases confined in strained germanium layers 1995 ·Semiconductor Science and Technology ·D. Többen,Markus Holzmann,G. Abstreiter,Armin Kriele,H. Lorenz,J. P. Kotthaus,F. Schäffler,Y. H. Xie,P. J. Silvėrman,D. Monroe	5
13	Enhanced Step Waviness on SiGe(001)-(2×1)Surfaces under Tensile Strain 1995 ·Physical Review Letters ·(unknown),J. P. Pelz,Y. H. Xie,P. J. Silvėrman,G. H. Gilmer	32
14	Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy 1994 ·Applied Physics Letters ·Eugene A. Fitzgerald,J. M. Kuo,Y. H. Xie,P. J. Silvėrman	30
15	Comparison of mobility-limiting mechanisms in high-mobility Si1−xGex heterostructures 1993 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Don Monroe,Y. H. Xie,Eugene A. Fitzgerald,P. J. Silvėrman,G. P. Watson	89
16	Gas-source molecular-beam epitaxy of InGaP and GaAs on strained-relaxed GexSi1−x/Si 1993 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·J. M. Kuo,Eugene A. Fitzgerald,Y. H. Xie,P. J. Silvėrman	11
17	Microstructure of erbium-implanted Si 1991 ·Applied Physics Letters ·D. J. Eaglesham,Jürgen Michel,Eugene A. Fitzgerald,D. C. Jacobson,J. M. Poate,J. L. Benton,Albert Polman,Y. H. Xie,Lionel C. Kimerling	130
18	Molecular Beam Epitaxial Growth of Very High Mobility Two-Dimensional Electron Gases in Si/GeSi Heterostructures 1991 ·MRS Proceedings ·Y. H. Xie,Eugene A. Fitzgerald,Y. J. Mii,D. Monroe,(unknown),B. E. Weir,L. C. Feldman	7
19	Heteroepitaxy of GexSi1−x on porous Si substrates 1990 ·Journal of Applied Physics ·Y. H. Xie,J. C. Bean	7
20	Power loss by two-dimensional holes in coherently strained Ge0.2Si0.8/Si heterostructures: Evidence for weak screening 1986 ·Applied Physics Letters ·Y. H. Xie,R. People,J. C. Bean,K. W. Wecht	26

About Y. H. Xie

Y. H. Xie is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 32 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (15 papers), Semiconductor Quantum Structures and Devices (14 papers) and Silicon Nanostructures and Photoluminescence (10 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (870 citations), Electrical and Electronic Engineering (1.1k citations) and Materials Chemistry (414 citations). Y. H. Xie has collaborated with scholars based in United States, Germany and Austria. Frequent co-authors include Eugene A. Fitzgerald, Y. J. Mii, B. E. Weir, Jürgen Michel, A. R. Kortan, D. Brasen, Don Monroe, P. J. Silvėrman, L. C. Feldman and J. L. Benton. Their work appears in journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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