Ming Xiao

3.4k total citations · 1 hit paper
101 papers, 2.7k citations indexed

About

Ming Xiao is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ming Xiao has authored 101 papers receiving a total of 2.7k indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Condensed Matter Physics, 56 papers in Electrical and Electronic Engineering and 52 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ming Xiao's work include GaN-based semiconductor devices and materials (62 papers), Ga2O3 and related materials (49 papers) and Silicon Carbide Semiconductor Technologies (37 papers). Ming Xiao is often cited by papers focused on GaN-based semiconductor devices and materials (62 papers), Ga2O3 and related materials (49 papers) and Silicon Carbide Semiconductor Technologies (37 papers). Ming Xiao collaborates with scholars based in United States, China and United Kingdom. Ming Xiao's co-authors include Yuhao Zhang, Ruizhe Zhang, Boyan Wang, Kohei Sasaki, Yunwei Ma, Han Wang, Jingcun Liu, Xiaodong Yan, Kai Cheng and Marko J. Tadjer and has published in prestigious journals such as Nature Communications, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

Ming Xiao

97 papers receiving 2.6k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics

2023 118 citations Feng Zhou, Hehe Gong et al. Nature Communications profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Ming Xiao United States	31	1.6k	1.4k	1.3k	927	338	101	2.7k
Xihong Chen China	24	1.0k 0.6×	540 0.4×	160 0.1×	2.0k 2.2×	96 0.3×	123	2.7k
F. Djeffal Algeria	29	2.0k 1.3×	260 0.2×	120 0.1×	1.0k 1.1×	130 0.4×	193	2.5k
Swaroop Ganguly India	17	1.4k 0.8×	401 0.3×	526 0.4×	315 0.3×	30 0.1×	156	2.1k
Wataru Kobayashi Japan	25	1.6k 1.0×	383 0.3×	262 0.2×	514 0.6×	21 0.1×	245	2.6k
Young‐Hee Han South Korea	22	819 0.5×	278 0.2×	431 0.3×	248 0.3×	36 0.1×	95	1.6k
Hongliang Chang China	20	1.4k 0.8×	247 0.2×	321 0.2×	478 0.5×	37 0.1×	48	2.1k
J.L. Hudgins United States	29	3.0k 1.9×	241 0.2×	376 0.3×	231 0.2×	92 0.3×	145	3.4k
Shailendra Rajput India	22	334 0.2×	364 0.3×	118 0.1×	420 0.5×	158 0.5×	75	1.1k
David S. Eastwood United Kingdom	16	1.2k 0.7×	295 0.2×	71 0.1×	272 0.3×	102 0.3×	45	1.7k

Countries citing papers authored by Ming Xiao

Since Specialization

Citations

This map shows the geographic impact of Ming Xiao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ming Xiao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ming Xiao more than expected).

Fields of papers citing papers by Ming Xiao

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ming Xiao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ming Xiao. The network helps show where Ming Xiao may publish in the future.

Co-authorship network of co-authors of Ming Xiao

This figure shows the co-authorship network connecting the top 25 collaborators of Ming Xiao. A scholar is included among the top collaborators of Ming Xiao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ming Xiao. Ming Xiao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Qin, Yuan, Matthew Porter, Ming Xiao, et al.. (2025). 10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling. Applied Physics Letters. 127(4). 1 indexed citations

Xiao, Ming, Matthew Porter, Kai Cheng, et al.. (2025). Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate. IEEE Electron Device Letters. 46(5). 717–720. 1 indexed citations

Wang, Yuxiang, Fuyu Yang, Peng Wen, et al.. (2024). Effects of Different Additives on the Chemical Composition, Fermentation Quality, Bacterial Community and Gene Function Prediction of Caragana korshinskii Kom. Silage. Agronomy. 14(10). 2386–2386. 1 indexed citations

Gong, Hehe, Feng Zhou, Ming Xiao, et al.. (2024). Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga₂O₃ Heterojunction by Edge Termination Optimization. IEEE Electron Device Letters. 45(8). 1421–1424. 21 indexed citations

Wang, Boyan, Ming Xiao, Zichen Zhang, et al.. (2023). Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices. IEEE Transactions on Electron Devices. 70(2). 633–639. 15 indexed citations

Labed, Madani, Nouredine Sengouga, Sultan Alhassan, et al.. (2023). Investigation of deep defects and their effects on the properties of NiO/β-Ga2O3 heterojuncion diodes. Repository@Nottingham (University of Nottingham). 4. 100042–100042. 4 indexed citations

Porter, Matthew, Yuan Qin, Joseph Spencer, et al.. (2023). 1 kV Self-Aligned Vertical GaN Superjunction Diode. IEEE Electron Device Letters. 45(1). 12–15. 13 indexed citations

Zhou, Feng, Hehe Gong, Ming Xiao, et al.. (2023). An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics. Nature Communications. 14(1). 4459–4459. 118 indexed citations breakdown →

Qin, Yuan, Ming Xiao, Matthew Porter, et al.. (2023). 10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C. IEEE Electron Device Letters. 44(8). 1268–1271. 57 indexed citations

10.

Wang, Boyan, Ming Xiao, Joseph Spencer, et al.. (2022). 2.5 kV Vertical Ga₂O₃ Schottky Rectifier With Graded Junction Termination Extension. IEEE Electron Device Letters. 44(2). 221–224. 85 indexed citations

11.

Wang, Boyan, Ming Xiao, Cyril Buttay, et al.. (2021). Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging. IEEE Electron Device Letters. 42(8). 1132–1135. 42 indexed citations

12.

Xiao, Ming, et al.. (2021). TCAD-Augmented Machine Learning With and Without Domain Expertise. IEEE Transactions on Electron Devices. 68(11). 5498–5503. 42 indexed citations

13.

Xiao, Ming, Boyan Wang, Jingcun Liu, et al.. (2021). Packaged Ga₂O₃ Schottky Rectifiers With Over 60-A Surge Current Capability. IEEE Transactions on Power Electronics. 36(8). 8565–8569. 102 indexed citations

14.

Xiao, Ming, Zhonghao Du, Jinqiao Xie, et al.. (2020). Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN. Applied Physics Letters. 116(5). 45 indexed citations

15.

Wong, Hiu Yung, Ming Xiao, Boyan Wang, et al.. (2020). TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis With Experimental Demonstration. IEEE Journal of the Electron Devices Society. 8. 992–1000. 44 indexed citations

16.

Ma, Yunwei, Ming Xiao, Zhonghao Du, et al.. (2020). Tri-gate GaN junction HEMT. Applied Physics Letters. 117(14). 35 indexed citations

17.

Wang, Hengyu, Ming Xiao, Kuang Sheng, Tomás Palacios, & Yuhao Zhang. (2020). Switching Performance Analysis of Vertical GaN FinFETs: Impact of Interfin Designs. IEEE Journal of Emerging and Selected Topics in Power Electronics. 9(2). 2235–2246. 34 indexed citations

18.

Zhang, Weihang, Jincheng Zhang, Ming Xiao, Li Zhang, & Yue Hao. (2018). High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains. IEEE Journal of the Electron Devices Society. 6. 931–935. 33 indexed citations

19.

Xiao, Ming. (2011). Thyristor-based High-voltage Motor Soft Starter. 1 indexed citations

20.

Xiao, Ming. (2001). A Web-based Intelligent Search Method. Jisuanji yingyong yanjiu. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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