Zhonghao Du

602 total citations
22 papers, 485 citations indexed

About

Zhonghao Du is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Zhonghao Du has authored 22 papers receiving a total of 485 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 14 papers in Condensed Matter Physics and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Zhonghao Du's work include GaN-based semiconductor devices and materials (14 papers), Ga2O3 and related materials (12 papers) and Silicon Carbide Semiconductor Technologies (6 papers). Zhonghao Du is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), Ga2O3 and related materials (12 papers) and Silicon Carbide Semiconductor Technologies (6 papers). Zhonghao Du collaborates with scholars based in United States, China and Hong Kong. Zhonghao Du's co-authors include Yuhao Zhang, Ming Xiao, Han Wang, Kai Cheng, Yunwei Ma, Jiangbin Wu, Xiaodong Yan, Edward Beam, Yuan Qin and Marko J. Tadjer and has published in prestigious journals such as Advanced Materials, Nano Letters and Applied Physics Letters.

In The Last Decade

Zhonghao Du

20 papers receiving 475 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Zhonghao Du United States	14	338	249	210	194	50	22	485
Yingjie Lyu China	10	197 0.6×	228 0.9×	140 0.7×	261 1.3×	78 1.6×	14	481
Xiangxiang Guan China	9	185 0.5×	196 0.8×	121 0.6×	210 1.1×	20 0.4×	17	387
Yahua Yuan China	15	241 0.7×	304 1.2×	256 1.2×	304 1.6×	40 0.8×	52	664
Nicolás M. Vargas United States	11	289 0.9×	155 0.6×	94 0.4×	193 1.0×	125 2.5×	25	513
James Lourembam Singapore	14	365 1.1×	322 1.3×	142 0.7×	347 1.8×	262 5.2×	30	726
Youdi Gu China	16	305 0.9×	353 1.4×	203 1.0×	468 2.4×	218 4.4×	41	760
Baoxing Zhai China	14	342 1.0×	222 0.9×	59 0.3×	599 3.1×	124 2.5×	34	787
Huaiwen Yang China	16	298 0.9×	333 1.3×	173 0.8×	364 1.9×	207 4.1×	50	704
Xuegang Chen China	14	198 0.6×	210 0.8×	69 0.3×	284 1.5×	88 1.8×	38	434
Dongyang Luo China	8	215 0.6×	109 0.4×	74 0.4×	144 0.7×	23 0.5×	16	356

Countries citing papers authored by Zhonghao Du

Since Specialization

Citations

This map shows the geographic impact of Zhonghao Du's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zhonghao Du with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zhonghao Du more than expected).

Fields of papers citing papers by Zhonghao Du

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zhonghao Du. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zhonghao Du. The network helps show where Zhonghao Du may publish in the future.

Co-authorship network of co-authors of Zhonghao Du

This figure shows the co-authorship network connecting the top 25 collaborators of Zhonghao Du. A scholar is included among the top collaborators of Zhonghao Du based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zhonghao Du. Zhonghao Du is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Li, Pengxia, et al.. (2025). Channel-aware feature mining network for Visible–Infrared Person Re-identification. Computer Vision and Image Understanding. 262. 104552–104552.

Qin, Yuan, Matthew Porter, Joseph Spencer, et al.. (2025). Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025). Advanced Electronic Materials. 11(1).

Porter, Matthew, Hehe Gong, Zhonghao Du, et al.. (2024). Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN. IEEE Transactions on Electron Devices. 71(9). 5589–5596. 5 indexed citations

Porter, Matthew, Yuan Qin, Joseph Spencer, et al.. (2023). 1 kV Self-Aligned Vertical GaN Superjunction Diode. IEEE Electron Device Letters. 45(1). 12–15. 13 indexed citations

Qin, Yuan, Ming Xiao, Matthew Porter, et al.. (2023). 10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C. IEEE Electron Device Letters. 44(8). 1268–1271. 57 indexed citations

Liu, Hefei, Hung‐Yu Chen, Jiangbin Wu, et al.. (2023). Artificial Neuronal Devices Based on Emerging Materials: Neuronal Dynamics and Applications. Advanced Materials. 35(37). e2205047–e2205047. 61 indexed citations

Qin, Yuan, Matthew Porter, Joseph Spencer, et al.. (2023). Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices. Advanced Electronic Materials. 11(1). 24 indexed citations

Qin, Yuan, Matthew Porter, Ming Xiao, et al.. (2023). 2 kV, 0.7 mΩ•cm² Vertical Ga₂O₃ Superjunction Schottky Rectifier with Dynamic Robustness. VTechWorks (Virginia Tech). 1–4. 16 indexed citations

Xiao, Ming, Boyan Wang, Ruizhe Zhang, et al.. (2023). NiO Junction Termination Extension for Ga₂O₃ Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed. The HKU Scholars Hub (University of Hong Kong). 386–389. 2 indexed citations

10.

Wu, Jiangbin, Miao‐Ling Lin, Malte Rösner, et al.. (2022). Spin–Phonon Coupling in Ferromagnetic Monolayer Chromium Tribromide. Advanced Materials. 34(20). e2108506–e2108506. 16 indexed citations

11.

Xiao, Ming, Yunwei Ma, Zhonghao Du, et al.. (2022). First Demonstration of Vertical Superjunction Diode in GaN. 2022 International Electron Devices Meeting (IEDM). 35.6.1–35.6.4. 26 indexed citations

12.

Liu, Hefei, Tong Wu, Xiaodong Yan, et al.. (2021). A Tantalum Disulfide Charge-Density-Wave Stochastic Artificial Neuron for Emulating Neural Statistical Properties. Nano Letters. 21(8). 3465–3472. 23 indexed citations

13.

Xiao, Ming, Yunwei Ma, Zhonghao Du, et al.. (2021). Multi-Channel Monolithic-Cascode HEMT (MC²-HEMT): A New GaN Power Switch up to 10 kV. 2021 IEEE International Electron Devices Meeting (IEDM). 5.5.1–5.5.4. 38 indexed citations

14.

Zhang, Yuhao, Ming Xiao, Yunwei Ma, et al.. (2021). (Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV. ECS Transactions. 104(4). 51–59. 2 indexed citations

15.

Ma, Yunwei, Ming Xiao, Yuhao Zhang, et al.. (2021). Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability. The HKU Scholars Hub (University of Hong Kong). 139–142. 7 indexed citations

16.

Ma, Yunwei, Ming Xiao, Zhonghao Du, Han Wang, & Yuhao Zhang. (2021). Tri-Gate GaN Junction HEMTs: Physics and Performance Space. IEEE Transactions on Electron Devices. 68(10). 4854–4861. 18 indexed citations

17.

Xiao, Ming, Zhonghao Du, Jinqiao Xie, et al.. (2020). Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN. Applied Physics Letters. 116(5). 45 indexed citations

18.

Ma, Yunwei, Ming Xiao, Zhonghao Du, et al.. (2020). Tri-gate GaN junction HEMT. Applied Physics Letters. 117(14). 35 indexed citations

19.

Xiao, Ming, Yunwei Ma, Zhonghao Du, et al.. (2020). 5 kV Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes with Junction-Fin-Anode. The HKU Scholars Hub (University of Hong Kong). 5.4.1–5.4.4. 30 indexed citations

20.

Wu, Jiangbin, Cong Xiong, Shanyuan Niu, et al.. (2019). Linear Dichroism Conversion in Quasi‐1D Perovskite Chalcogenide. Advanced Materials. 31(33). e1902118–e1902118. 59 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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