Kornelius Tetzner

1.1k total citations
40 papers, 899 citations indexed

About

Kornelius Tetzner is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Kornelius Tetzner has authored 40 papers receiving a total of 899 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Materials Chemistry, 24 papers in Electrical and Electronic Engineering and 20 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Kornelius Tetzner's work include ZnO doping and properties (22 papers), Ga2O3 and related materials (20 papers) and Thin-Film Transistor Technologies (10 papers). Kornelius Tetzner is often cited by papers focused on ZnO doping and properties (22 papers), Ga2O3 and related materials (20 papers) and Thin-Film Transistor Technologies (10 papers). Kornelius Tetzner collaborates with scholars based in Germany, United Kingdom and Saudi Arabia. Kornelius Tetzner's co-authors include Thomas D. Anthopoulos, Joachim Würfl, Andreas Popp, Saud Bin Anooz, Oliver Hilt, Eldad Bahat‐Treidel, Anna Regoutz, Karlheinz Bock, Andreas Thies and Yen‐Hung Lin and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Advanced Functional Materials.

In The Last Decade

Kornelius Tetzner

37 papers receiving 888 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kornelius Tetzner Germany 17 616 535 404 171 128 40 899
Masatsugu Oishi Japan 21 685 1.1× 982 1.8× 526 1.3× 91 0.5× 48 0.4× 58 1.5k
Jan Musschoot Belgium 16 581 0.9× 691 1.3× 205 0.5× 74 0.4× 72 0.6× 25 916
Matthew J. Wahila United States 15 408 0.7× 424 0.8× 209 0.5× 64 0.4× 157 1.2× 21 675
V. Osinniy Poland 16 783 1.3× 628 1.2× 293 0.7× 90 0.5× 50 0.4× 48 1.0k
Christopher J. Patridge United States 11 287 0.5× 471 0.9× 205 0.5× 86 0.5× 418 3.3× 18 726
Jung Min Ko South Korea 12 336 0.5× 341 0.6× 211 0.5× 96 0.6× 149 1.2× 24 614
Quanxi Cao China 18 448 0.7× 469 0.9× 238 0.6× 56 0.3× 98 0.8× 38 780
E. J. Rubio United States 10 607 1.0× 294 0.5× 484 1.2× 220 1.3× 44 0.3× 13 736
R. Vinodkumar India 17 862 1.4× 763 1.4× 193 0.5× 83 0.5× 348 2.7× 38 1.1k
Benjamin Weintraub United States 9 745 1.2× 553 1.0× 235 0.6× 171 1.0× 122 1.0× 9 975

Countries citing papers authored by Kornelius Tetzner

Since Specialization
Citations

This map shows the geographic impact of Kornelius Tetzner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kornelius Tetzner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kornelius Tetzner more than expected).

Fields of papers citing papers by Kornelius Tetzner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kornelius Tetzner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kornelius Tetzner. The network helps show where Kornelius Tetzner may publish in the future.

Co-authorship network of co-authors of Kornelius Tetzner

This figure shows the co-authorship network connecting the top 25 collaborators of Kornelius Tetzner. A scholar is included among the top collaborators of Kornelius Tetzner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kornelius Tetzner. Kornelius Tetzner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tetzner, Kornelius, et al.. (2025). All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates. Applied Physics Letters. 126(6). 1 indexed citations
2.
Tetzner, Kornelius, et al.. (2025). Lateral Rutile GeO 2 MOSFET Devices on Single-Crystal r-GeO 2 Substrates. IEEE Electron Device Letters. 47(3). 566–569.
3.
Albrecht, M., Oliver Bierwagen, Claudia Draxl, Kornelius Tetzner, & Holger von Wenckstern. (2025). Advances in Gallium Oxide—from Fundamental Materials Science to Device Implementation. physica status solidi (b). 262(8).
4.
Chou, Ta‐Shun, Hartwin Peelaers, Kornelius Tetzner, et al.. (2024). Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices. Advanced Electronic Materials. 11(1).
5.
Santi, Carlo De, Kornelius Tetzner, Joachim Würfl, et al.. (2023). Gate leakage modeling in lateral β -Ga2O3 MOSFETs with Al2O3 gate dielectric. Applied Physics Letters. 123(10). 2 indexed citations
6.
Chou, Ta‐Shun, Saud Bin Anooz, Raimund Grüneberg, et al.. (2023). Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β -Ga2O3 films for vertical device application. Applied Physics Letters. 122(5). 20 indexed citations
7.
Tetzner, Kornelius, Andreas Thies, Ta‐Shun Chou, et al.. (2023). Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(4). 8 indexed citations
8.
Chou, Ta‐Shun, Saud Bin Anooz, Raimund Grüneberg, et al.. (2023). High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression. Japanese Journal of Applied Physics. 62(SF). SF1004–SF1004. 14 indexed citations
9.
Tetzner, Kornelius, Andreas Popp, Saud Bin Anooz, et al.. (2023). Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1. Japanese Journal of Applied Physics. 62(SF). SF1010–SF1010. 22 indexed citations
10.
Tetzner, Kornelius, Kingsley Egbo, Andreas Popp, et al.. (2022). SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes. Applied Physics Letters. 120(11). 30 indexed citations
11.
Santi, Carlo De, Kornelius Tetzner, Joachim Würfl, et al.. (2022). Logarithmic trapping and detrapping in β -Ga2O3 MOSFETs: Experimental analysis and modeling. Applied Physics Letters. 120(16). 16 indexed citations
12.
Tetzner, Kornelius, Robert Schewski, Andreas Popp, et al.. (2022). Refractory metal-based ohmic contacts on β -Ga2O3 using TiW. APL Materials. 10(7). 6 indexed citations
13.
Santi, Carlo De, Kornelius Tetzner, Joachim Würfl, et al.. (2022). Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs. Padua Research Archive (University of Padova). 3 indexed citations
14.
Tetzner, Kornelius, Andreas Popp, Oliver Hilt, et al.. (2021). Switching behavior and dynamic on-resistance of lateral β-Ga2 O3 MOSFETs up to 400 V. 52–57. 2 indexed citations
15.
Bahat‐Treidel, Eldad, Oliver Hilt, Veit Hoffmann, et al.. (2021). On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs. IEEE Journal of the Electron Devices Society. 9. 215–228. 14 indexed citations
16.
Böcker, Jan, Kornelius Tetzner, Oliver Hilt, et al.. (2020). Dispersion effects in on‐state resistance of lateral Ga 2 O 3 MOSFETs at 300 V switching. Electronics Letters. 56(16). 838–840. 8 indexed citations
17.
Tetzner, Kornelius, Eldad Bahat‐Treidel, Oliver Hilt, et al.. (2019). Lateral 1.8 kV $\beta$ -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit. IEEE Electron Device Letters. 40(9). 1503–1506. 120 indexed citations
18.
Hilt, Oliver, et al.. (2019). Lateral and vertical power transistors in GaN and Ga 2 O 3. IET Power Electronics. 12(15). 3919–3927. 19 indexed citations
19.
Dellis, Spilios, Ivan Isakov, N. Kalfagiannis, et al.. (2017). Rapid laser-induced photochemical conversion of sol–gel precursors to In2O3 layers and their application in thin-film transistors. Journal of Materials Chemistry C. 5(15). 3673–3677. 32 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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