Matthew Porter

676 total citations · 1 hit paper
29 papers, 430 citations indexed

About

Matthew Porter is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Matthew Porter has authored 29 papers receiving a total of 430 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 20 papers in Condensed Matter Physics and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Matthew Porter's work include GaN-based semiconductor devices and materials (20 papers), Silicon Carbide Semiconductor Technologies (16 papers) and Ga2O3 and related materials (14 papers). Matthew Porter is often cited by papers focused on GaN-based semiconductor devices and materials (20 papers), Silicon Carbide Semiconductor Technologies (16 papers) and Ga2O3 and related materials (14 papers). Matthew Porter collaborates with scholars based in United States, Hong Kong and China. Matthew Porter's co-authors include Yuhao Zhang, Qihao Song, Bixuan Wang, Ruizhe Zhang, Joseph P. Kozak, Wataru Saito, Jingcun Liu, Ming Xiao, Yuan Qin and Joseph Spencer and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and IEEE Transactions on Power Electronics.

In The Last Decade

Matthew Porter

23 papers receiving 420 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Stability, Reliability, and Robustness of GaN Power Devices: A Review

2023 192 citations Joseph P. Kozak, Ruizhe Zhang et al. IEEE Transactions on Power Electronics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Matthew Porter United States	10	275	207	197	139	56	29	430
Catherine Langpoklakpam Taiwan	7	185 0.7×	112 0.5×	117 0.6×	122 0.9×	36 0.6×	16	307
Yoshiharu Anda Japan	12	486 1.8×	376 1.8×	208 1.1×	102 0.7×	32 0.6×	27	563
An-Chen Liu Taiwan	8	176 0.6×	81 0.4×	89 0.5×	93 0.7×	31 0.6×	16	253
Zhizhe Wang China	12	295 1.1×	153 0.7×	123 0.6×	127 0.9×	28 0.5×	59	416
Wenjian Liu United States	11	202 0.7×	212 1.0×	175 0.9×	133 1.0×	19 0.3×	25	366
Daniel Shoemaker United States	10	277 1.0×	103 0.5×	198 1.0×	488 3.5×	46 0.8×	28	563
Zhiyuan Liu Saudi Arabia	11	96 0.3×	111 0.5×	115 0.6×	133 1.0×	57 1.0×	31	285
Shalini Lal United States	10	263 1.0×	140 0.7×	90 0.5×	78 0.6×	9 0.2×	18	344
Satoshi Nakazawa Japan	11	356 1.3×	257 1.2×	210 1.1×	78 0.6×	12 0.2×	24	436
Tyler Flack United States	3	221 0.8×	248 1.2×	122 0.6×	108 0.8×	5 0.1×	7	342

Countries citing papers authored by Matthew Porter

Since Specialization

Citations

This map shows the geographic impact of Matthew Porter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Matthew Porter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Matthew Porter more than expected).

Fields of papers citing papers by Matthew Porter

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Matthew Porter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Matthew Porter. The network helps show where Matthew Porter may publish in the future.

Co-authorship network of co-authors of Matthew Porter

This figure shows the co-authorship network connecting the top 25 collaborators of Matthew Porter. A scholar is included among the top collaborators of Matthew Porter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Matthew Porter. Matthew Porter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Xiao, Ming, Matthew Porter, Kai Cheng, et al.. (2025). Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate. IEEE Electron Device Letters. 46(5). 717–720. 1 indexed citations

Gong, Hehe, Xin Yang, Matthew Porter, et al.. (2025). Reliability of NiO/β-Ga2O3 bipolar heterojunction. Applied Physics Letters. 126(1). 4 indexed citations

Qin, Yuan, Matthew Porter, Ming Xiao, et al.. (2025). 10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling. Applied Physics Letters. 127(4). 1 indexed citations

Spencer, Joseph, Yuan Qin, Alan G. Jacobs, et al.. (2025). Plasma-etch-free β-Ga2O3–NiO–PtOx merged PiN Schottky diode with high-voltage stress reliability. SHILAP Revista de lepidopterología. 1(1). 1 indexed citations

Qin, Yuan, Ming Xiao, Matthew Porter, et al.. (2025). Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV. IEEE Electron Device Letters. 46(4). 556–559. 5 indexed citations

Qin, Yuan, Matthew Porter, Joseph Spencer, et al.. (2025). Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025). Advanced Electronic Materials. 11(1).

Porter, Matthew, Hehe Gong, Zhonghao Du, et al.. (2024). Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN. IEEE Transactions on Electron Devices. 71(9). 5589–5596. 5 indexed citations

Gong, Hehe, Na Sun, Matthew Porter, et al.. (2024). Kilovolt, Low-Barrier Ga₂O₃ JBS diode with Ultra-Low Forward Voltage. The HKU Scholars Hub (University of Hong Kong). 104–107.

Yang, Xin, et al.. (2024). First Characterization of Si, SiC and GaN Power Deivces at Deep Cryogenic Temperatures Down to 0.1 K. 1–4. 2 indexed citations

10.

Qin, Yuan, Hehe Gong, Alan G. Jacobs, et al.. (2024). 10 kV, 250°C Operational, Enhancement-Mode Ga₂O₃ JFET with Charge-Balance and Hybrid-Drain Designs. 1–4. 6 indexed citations

11.

Porter, Matthew, et al.. (2024). Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective. Applied Physics Letters. 125(11). 12 indexed citations

12.

Qin, Yuan, Yunwei Ma, Ming Xiao, et al.. (2024). (Ultra-)Wide-Bandgap Heterogeneous Superjunction: Design, Performance Limit, and Experimental Demonstration. IEEE Transactions on Electron Devices. 72(1). 119–127. 3 indexed citations

13.

Yang, Xin, Matthew Porter, Qihao Song, & Yuhao Zhang. (2024). Evaluation of Crosstalk-Induced Dynamic R_ON in GaN-on-Si Monolithic Half-Bridge Power IC. 6720–6724. 1 indexed citations

14.

Yang, Xin, Yuan Qin, Matthew Porter, et al.. (2024). Ultrafast Optically Controlled Power Switch: A General Design and Demonstration With 3.3 kV SiC MOSFET. IEEE Transactions on Electron Devices. 71(12). 8025–8030. 6 indexed citations

15.

Porter, Matthew, et al.. (2023). Rapid Inverse Design of GaN-on-GaN Diode with Guard Ring Termination for BV and (V_FQ)⁻¹ Co-Optimization. The HKU Scholars Hub (University of Hong Kong). 143–146. 4 indexed citations

16.

Kozak, Joseph P., Ruizhe Zhang, Matthew Porter, et al.. (2023). Stability, Reliability, and Robustness of GaN Power Devices: A Review. IEEE Transactions on Power Electronics. 38(7). 8442–8471. 192 indexed citations breakdown →

17.

Porter, Matthew, Yuan Qin, Joseph Spencer, et al.. (2023). 1 kV Self-Aligned Vertical GaN Superjunction Diode. IEEE Electron Device Letters. 45(1). 12–15. 13 indexed citations

18.

Qin, Yuan, Ming Xiao, Matthew Porter, et al.. (2023). 10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C. IEEE Electron Device Letters. 44(8). 1268–1271. 57 indexed citations

19.

Qin, Yuan, Matthew Porter, Joseph Spencer, et al.. (2023). Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices. Advanced Electronic Materials. 11(1). 24 indexed citations

20.

Xiao, Ming, Ruizhe Zhang, Qihao Song, et al.. (2023). Robust Avalanche in 1.7 kV Vertical GaN Diodes With a Single-Implant Bevel Edge Termination. IEEE Electron Device Letters. 44(10). 1616–1619. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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