Matthew Porter

676 citations

29 papers · 430 indexed · 1 hit paper · h-index 10

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 20
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 14
Electrical and Electronic Engineering
- Silicon Carbide Semiconductor Technologies 16
- Semiconductor materials and devices 11
- Thin-Film Transistor Technologies 1
Renewable Energy, Sustainability and the Environment
Materials Chemistry
- ZnO doping and properties 8
- Electronic and Structural Properties of Oxides 3
Atomic and Molecular Physics, and Optics
- Gyrotron and Vacuum Electronics Research 1

Co-authors: Yuhao Zhang Qihao Song Ruizhe Zhang Bixuan Wang Jingcun Liu Wataru Saito Joseph P. Kozak Ming Xiao
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Electron Device Letters (5 papers)Applied Physics Letters (5 papers)IEEE Transactions on Electron Devices (4 papers)
Partner nations: United States Hong Kong China

In The Last Decade

Matthew Porter

23 papers receiving 420 citations

Hit Papers

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Peers

Countries citing papers authored by Matthew Porter

Since Specialization

Citations

This map shows the geographic impact of Matthew Porter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Matthew Porter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Matthew Porter more than expected).

Fields of papers citing papers by Matthew Porter

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Matthew Porter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Matthew Porter. The network helps show where Matthew Porter may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Matthew Porter, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Matthew Porter Line = papers co-authored together Matthew Porter links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Reliability of NiO/β-Ga2O3 bipolar heterojunction Applied Physics Letters ·Hehe Gong,Xin Yang,Matthew Porter,Е. П. Чайко,Bixuan Wang,Li Li,Lan Fu,Kohei Sasaki,Han Wang,Shulin Gu,Rong Zhang,Jiandong Ye,Yuhao Zhang	2025	4
2	10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling Applied Physics Letters ·Oumaima Akrane,Yuan Qin,Matthew Porter,Е. П. Чайко,Ming Xiao,Arti Pandey,D. Popa,Loizos Efthymiou,Antonie Wessels,K. Y. Cheng,Ivan I. Kravchenko,Linbo Shao,Florin Udrea,Yuhao Zhang	2025	1
3	Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate IEEE Electron Device Letters ·Arti Pandey,Ming Xiao,Е. П. Чайко,Matthew Porter,Kai Cheng,Qihao Song,Ivan I. Kravchenko,Yuhao Zhang	2025	1
4	Plasma-etch-free β-Ga2O3–NiO–PtOx merged PiN Schottky diode with high-voltage stress reliability SHILAP Revista de lepidopterología ·Joseph Spencer,Yuan Qin,Alan G. Jacobs,Boyan Wang,Neeraj Nepal,E. Skriegan,Matthew Porter,Bixuan Wang,Geoffrey M. Foster,Akito Kuramata,Karl D. Hobart,Travis J. Anderson,Yuhao Zhang,Marko J. Tadjer	2025	1
5	Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV IEEE Electron Device Letters ·Oumaima Akrane,Yuan Qin,Ming Xiao,Matthew Porter,Qihao Song,D. Popa,Loizos Efthymiou,Kai Cheng,Ivan I. Kravchenko,Linbo Shao,Han Wang,Florin Udrea,Yuhao Zhang	2025	5
6	Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025) Advanced Electronic Materials ·Shyama Talib Hussain,Yuan Qin,Matthew Porter,Joseph Spencer,Zhonghao Du,Ming Xiao,Boyan Wang,Arti Pandey,Alan G. Jacobs,Han Wang,Marko J. Tadjer,Yuhao Zhang	2025	0
7	Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective Applied Physics Letters ·Matthew Porter,Xin Yang,Hehe Gong,Bixuan Wang,Е. П. Чайко,Yuhao Zhang	2024	12
8	Kilovolt, Low-Barrier Ga₂O₃ JBS diode with Ultra-Low Forward Voltage The HKU Scholars Hub (University of Hong Kong) ·Hehe Gong,Na Sun,一郎大手,Matthew Porter,Xinxin Yu,Fangfang Ren,Shulin Gu,Youdou Zheng,Rong Zhang,Yuhao Zhang,Jiandong Ye	2024	0
9	Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN IEEE Transactions on Electron Devices ·Е. П. Чайко,Shyama Talib Hussain,Matthew Porter,Hehe Gong,Zhonghao Du,Han Wang,Yi Luo,Lai Wang,Yuhao Zhang	2024	5
10	First Characterization of Si, SiC and GaN Power Deivces at Deep Cryogenic Temperatures Down to 0.1 K Xin Yang,Matthew Porter,Е. П. Чайко,Eslah Mahdi,Qiang Li,Linbo Shao,Yuhao Zhang	2024	2
11	10 kV, 250°C Operational, Enhancement-Mode Ga₂O₃ JFET with Charge-Balance and Hybrid-Drain Designs Yuan Qin,Е. П. Чайко,Hehe Gong,Alan G. Jacobs,Joseph Spencer,Matthew Porter,Bixuan Wang,Kohei Sasaki,Chia-Hung Lin,Marko J. Tadjer,Yuhao Zhang	2024	6
12	Evaluation of Crosstalk-Induced Dynamic R_ON in GaN-on-Si Monolithic Half-Bridge Power IC Xin Yang,Matthew Porter,Qihao Song,Yuhao Zhang	2024	1
13	(Ultra-)Wide-Bandgap Heterogeneous Superjunction: Design, Performance Limit, and Experimental Demonstration IEEE Transactions on Electron Devices ·Yuan Qin,Yunwei Ma,Ming Xiao,Matthew Porter,Florin Udrea,Han Wang,Yuhao Zhang	2024	3
14	Ultrafast Optically Controlled Power Switch: A General Design and Demonstration With 3.3 kV SiC MOSFET IEEE Transactions on Electron Devices ·Xin Yang,Andi Harpeni Dewantara,B. Creisher,Yuan Qin,Matthew Porter,Xiaoting Jia,Dong Dong,Linbo Shao,Yuhao Zhang	2024	6
15	1 kV Self-Aligned Vertical GaN Superjunction Diode IEEE Electron Device Letters ·Shyama Talib Hussain,Matthew Porter,Yuan Qin,Joseph Spencer,Zhonghao Du,Ming Xiao,Arti Pandey,Ivan I. Kravchenko,Dayrl P. Briggs,Dale K. Hensley,Florin Udrea,Marko J. Tadjer,Han Wang,Yuhao Zhang	2023	13
16	10-kV Ga₂O₃ Charge-Balance Schottky Rectifier Operational at 200 °C IEEE Electron Device Letters ·Yuan Qin,Ming Xiao,Matthew Porter,Shyama Talib Hussain,Joseph Spencer,Zhonghao Du,Alan G. Jacobs,Kohei Sasaki,Jirawan Pålsson,Marko J. Tadjer,Yuhao Zhang	2023	57
17	Stability, Reliability, and Robustness of GaN Power Devices: A Reviewbreakdown → IEEE Transactions on Power Electronics ·Joseph P. Kozak,Ruizhe Zhang,Matthew Porter,Qihao Song,Jingcun Liu,Bixuan Wang,Gicele Santos da Silva,Wataru Saito,Yuhao Zhang	2023	192
18	Rapid Inverse Design of GaN-on-GaN Diode with Guard Ring Termination for BV and (V_FQ)⁻¹ Co-Optimization The HKU Scholars Hub (University of Hong Kong) ·Amanda Goulart Rodrigues,Eden House,梅野高裕,Matthew Porter,Yuhao Zhang,Hiu Yung Wong	2023	4
19	Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices Advanced Electronic Materials ·Shyama Talib Hussain,Yuan Qin,Matthew Porter,Joseph Spencer,Zhonghao Du,Ming Xiao,Boyan Wang,Arti Pandey,Alan G. Jacobs,Han Wang,Marko J. Tadjer,Yuhao Zhang	2023	24
20	Robust Avalanche in 1.7 kV Vertical GaN Diodes With a Single-Implant Bevel Edge Termination IEEE Electron Device Letters ·Ming Xiao,Arti Pandey,Ruizhe Zhang,Qihao Song,Matthew Porter,Cesareo L. R. Siqueira,Kai Cheng,Khai D. T. Ngo,Yuhao Zhang	2023	19

About Matthew Porter

Matthew Porter is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 29 papers that have together received 430 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (20 papers), Silicon Carbide Semiconductor Technologies (16 papers), Ga2O3 and related materials (14 papers), Semiconductor materials and devices (11 papers), ZnO doping and properties (8 papers), Electronic and Structural Properties of Oxides (3 papers), Gyrotron and Vacuum Electronics Research (1 paper) and Thin-Film Transistor Technologies (1 paper). The work is most often cited by research in Condensed Matter Physics (207 citations), Electronic, Optical and Magnetic Materials (197 citations) and Electrical and Electronic Engineering (275 citations). Matthew Porter has collaborated with scholars based in United States, Hong Kong and China. Frequent co-authors include Yuhao Zhang, Qihao Song, Ruizhe Zhang, Bixuan Wang, Jingcun Liu, Wataru Saito, Joseph P. Kozak, Ming Xiao, Yuan Qin and Marko J. Tadjer. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Power Electronics and Advanced Electronic Materials.

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