Chia-Hung Lin

742 total citations
14 papers, 615 citations indexed

About

Chia-Hung Lin is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, Chia-Hung Lin has authored 14 papers receiving a total of 615 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electronic, Optical and Magnetic Materials, 11 papers in Materials Chemistry and 5 papers in Electrical and Electronic Engineering. Recurrent topics in Chia-Hung Lin's work include Ga2O3 and related materials (12 papers), ZnO doping and properties (10 papers) and Advanced Photocatalysis Techniques (5 papers). Chia-Hung Lin is often cited by papers focused on Ga2O3 and related materials (12 papers), ZnO doping and properties (10 papers) and Advanced Photocatalysis Techniques (5 papers). Chia-Hung Lin collaborates with scholars based in Japan, United States and Taiwan. Chia-Hung Lin's co-authors include Masataka Higashiwaki, Man Hoi Wong, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi, Keita Konishi, Dapeng Yu, Yifan Zhu and Fengtao Yang and has published in prestigious journals such as Applied Physics Letters, The Journal of Clinical Endocrinology & Metabolism and Physical Review B.

In The Last Decade

Chia-Hung Lin

14 papers receiving 601 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Chia-Hung Lin Japan	8	588	552	323	112	59	14	615
Toshimi Hitora Japan	8	565 1.0×	562 1.0×	361 1.1×	107 1.0×	52 0.9×	18	600
Takeki Itoh United States	14	592 1.0×	558 1.0×	333 1.0×	124 1.1×	95 1.6×	24	632
Riena Jinno Japan	15	703 1.2×	688 1.2×	361 1.1×	172 1.5×	82 1.4×	22	743
Ross Miller United States	7	429 0.7×	424 0.8×	235 0.7×	98 0.9×	41 0.7×	8	455
Joe F. McGlone United States	13	777 1.3×	729 1.3×	422 1.3×	140 1.3×	81 1.4×	23	795
Nolan S. Hendricks United States	9	491 0.8×	442 0.8×	187 0.6×	140 1.3×	62 1.1×	19	516
Etsuko Ohba Japan	7	560 1.0×	549 1.0×	340 1.1×	85 0.8×	28 0.5×	10	592
Daiki Wakimoto Japan	9	614 1.0×	576 1.0×	276 0.9×	106 0.9×	75 1.3×	12	629
Kazuaki Akaiwa Japan	8	443 0.8×	439 0.8×	278 0.9×	86 0.8×	23 0.4×	15	466
Anna Hassa Germany	14	494 0.8×	525 1.0×	229 0.7×	139 1.2×	43 0.7×	18	550

Countries citing papers authored by Chia-Hung Lin

Since Specialization

Citations

This map shows the geographic impact of Chia-Hung Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chia-Hung Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chia-Hung Lin more than expected).

Fields of papers citing papers by Chia-Hung Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chia-Hung Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chia-Hung Lin. The network helps show where Chia-Hung Lin may publish in the future.

Co-authorship network of co-authors of Chia-Hung Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Chia-Hung Lin. A scholar is included among the top collaborators of Chia-Hung Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chia-Hung Lin. Chia-Hung Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Wakimoto, Daiki, et al.. (2025). A multi-fin normally-off β-Ga₂O₃ vertical transistor with a breakdown voltage exceeding 10 kV. Applied Physics Express. 18(10). 106502–106502. 1 indexed citations

Qin, Yuan, Hehe Gong, Alan G. Jacobs, et al.. (2024). 10 kV, 250°C Operational, Enhancement-Mode Ga₂O₃ JFET with Charge-Balance and Hybrid-Drain Designs. 1–4. 6 indexed citations

Yan, Zhang, Jihong Zhao, & Chia-Hung Lin. (2024). A Link Between the George Floyd Incident and De-Policing: Evidence From Police Arrests Across Three Racial and Ethnic Groups. Police Quarterly. 27(4). 475–504. 4 indexed citations

Wakimoto, Daiki, et al.. (2023). Nitrogen-doped β-Ga₂O₃ vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm² V⁻¹ s⁻¹. Applied Physics Express. 16(3). 36503–36503. 20 indexed citations

Lin, Chia-Hung, et al.. (2023). Uniformity improvement of thickness and net donor concentration in halide vapor phase epitaxial β-Ga₂O₃ wafers prepared on miscut angle substrates. Japanese Journal of Applied Physics. 62(SF). SF1005–SF1005. 9 indexed citations

Qin, Yuan, Matthew Porter, Ming Xiao, et al.. (2023). 2 kV, 0.7 mΩ•cm² Vertical Ga₂O₃ Superjunction Schottky Rectifier with Dynamic Robustness. VTechWorks (Virginia Tech). 1–4. 16 indexed citations

Kuo, Yu‐Ting, Mei‐Fang Cheng, Pei‐Lung Chen, et al.. (2023). Traits of Patients With Pituitary Tumors in Multiple Endocrine Neoplasia Type 1 and Comparing Different Mutation Status. The Journal of Clinical Endocrinology & Metabolism. 108(12). e1532–e1541. 2 indexed citations

Kumar, Sandeep, Takafumi Kamimura, Chia-Hung Lin, Yoshiaki Nakata, & Masataka Higashiwaki. (2020). Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities. Applied Physics Letters. 117(19). 18 indexed citations

Lin, Chia-Hung, Yohei Yuda, Man Hoi Wong, et al.. (2019). Vertical Ga₂O₃ Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation. IEEE Electron Device Letters. 40(9). 1487–1490. 168 indexed citations

10.

Lin, Chia-Hung, Yohei Yuda, Man Hoi Wong, et al.. (2019). Vertical Ga₂O₃ Schottky Barrier Diodes with Guard Ring Formed by Nitrogen-Ion Implantation. 1–1. 3 indexed citations

11.

Lin, Chia-Hung, Keita Konishi, Shinya Watanabe, et al.. (2019). Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface. Applied Physics Letters. 114(3). 49 indexed citations

12.

Wong, Man Hoi, Chia-Hung Lin, Akito Kuramata, et al.. (2018). Acceptor doping of β-Ga2O3 by Mg and N ion implantations. Applied Physics Letters. 113(10). 161 indexed citations

13.

Higashiwaki, Masataka, Man Hoi Wong, Takafumi Kamimura, et al.. (2018). Recent Advances in Ga₂O₃ MOSFET Technologies. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 37. 1–1. 1 indexed citations

14.

Zhang, Hongzhou, et al.. (2004). Luminescence emission originating from nitrogen doping ofβ−Ga2O3nanowires. Physical Review B. 69(7). 157 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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