Akito Kuramata

21.9k total citations · 8 hit papers
268 papers, 18.2k citations indexed

About

Akito Kuramata is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Renewable Energy, Sustainability and the Environment. According to data from OpenAlex, Akito Kuramata has authored 268 papers receiving a total of 18.2k indexed citations (citations by other indexed papers that have themselves been cited), including 207 papers in Electronic, Optical and Magnetic Materials, 198 papers in Materials Chemistry and 89 papers in Renewable Energy, Sustainability and the Environment. Recurrent topics in Akito Kuramata's work include Ga2O3 and related materials (207 papers), ZnO doping and properties (192 papers) and Advanced Photocatalysis Techniques (89 papers). Akito Kuramata is often cited by papers focused on Ga2O3 and related materials (207 papers), ZnO doping and properties (192 papers) and Advanced Photocatalysis Techniques (89 papers). Akito Kuramata collaborates with scholars based in Japan, United States and South Korea. Akito Kuramata's co-authors include Shigenobu Yamakoshi, Kohei Sasaki, Masataka Higashiwaki, Takekazu Masui, Hisashi Murakami, Yoshinao Kumagai, Man Hoi Wong, S. J. Pearton, F. Ren and Ken Goto and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Akito Kuramata

264 papers receiving 17.6k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2012 1.5k citations Masataka Higashiwaki, Kohei Sasaki et al. Applied Physics Letters profile →
Recent progress in Ga₂O₃power devices

2016 910 citations Masataka Higashiwaki, Kohei Sasaki et al. profile →
High-quality β-Ga₂O₃ single crystals grown by edge-defined film-fed growth

2016 839 citations Akito Kuramata, Kimiyoshi Koshi et al. Japanese Journal of Applied Physics profile →
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

2013 602 citations Masataka Higashiwaki, Kohei Sasaki et al. Applied Physics Letters profile →
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

2012 514 citations Kohei Sasaki, Akito Kuramata et al. Applied Physics Express profile →
1-kV vertical Ga2O3 field-plated Schottky barrier diodes

2017 483 citations Keita Konishi, Ken Goto et al. Applied Physics Letters profile →
Field-Plated Ga₂O₃MOSFETs With a Breakdown Voltage of Over 750 V

2015 454 citations Kohei Sasaki, Akito Kuramata et al. profile →
Anisotropic thermal conductivity in single crystal β-gallium oxide

2015 430 citations Akito Kuramata, Masataka Higashiwaki et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Akito Kuramata Japan	64	16.4k	16.0k	8.1k	3.7k	2.3k	268	18.2k
Masataka Higashiwaki Japan	58	12.3k 0.8×	11.5k 0.7×	5.6k 0.7×	3.5k 0.9×	2.7k 1.2×	181	14.0k
Marko J. Tadjer United States	45	6.8k 0.4×	7.1k 0.4×	3.0k 0.4×	3.2k 0.9×	2.0k 0.9×	240	9.2k
Shigenobu Yamakoshi Japan	45	10.2k 0.6×	10.0k 0.6×	5.2k 0.6×	2.9k 0.8×	991 0.4×	144	11.8k
Yoshinao Kumagai Japan	40	5.7k 0.3×	5.4k 0.3×	2.2k 0.3×	2.1k 0.6×	3.0k 1.3×	232	7.7k
K. Irmscher Germany	38	5.2k 0.3×	5.4k 0.3×	2.5k 0.3×	1.9k 0.5×	749 0.3×	150	6.5k
Zbigniew Galazka Germany	45	7.4k 0.5×	7.9k 0.5×	3.7k 0.5×	2.1k 0.6×	568 0.2×	193	8.7k
R. Fornari Germany	37	4.3k 0.3×	4.9k 0.3×	2.1k 0.3×	1.8k 0.5×	727 0.3×	210	5.9k
Michael A. Mastro United States	31	4.3k 0.3×	4.5k 0.3×	1.9k 0.2×	2.1k 0.6×	1.6k 0.7×	152	6.0k
A. Y. Polyakov Russia	44	4.6k 0.3×	4.2k 0.3×	1.3k 0.2×	3.9k 1.0×	4.0k 1.7×	375	8.2k
Michael D. Biegalski United States	49	4.5k 0.3×	6.7k 0.4×	1.4k 0.2×	2.5k 0.7×	1.0k 0.4×	112	8.4k

Countries citing papers authored by Akito Kuramata

Since Specialization

Citations

This map shows the geographic impact of Akito Kuramata's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Akito Kuramata with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Akito Kuramata more than expected).

Fields of papers citing papers by Akito Kuramata

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Akito Kuramata. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Akito Kuramata. The network helps show where Akito Kuramata may publish in the future.

Co-authorship network of co-authors of Akito Kuramata

This figure shows the co-authorship network connecting the top 25 collaborators of Akito Kuramata. A scholar is included among the top collaborators of Akito Kuramata based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Akito Kuramata. Akito Kuramata is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Huynh, Kenny, Michael E. Liao, Marko J. Tadjer, et al.. (2025). Crack formation in strained β-(AlxGa1−x)2O3 films grown on (010) β-Ga2O3 substrates. APL Materials. 13(11).

Wakimoto, Daiki, et al.. (2023). Nitrogen-doped β-Ga₂O₃ vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm² V⁻¹ s⁻¹. Applied Physics Express. 16(3). 36503–36503. 20 indexed citations

Sasaki, Kohei, et al.. (2023). Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga₂O₃ by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes. Japanese Journal of Applied Physics. 62(SF). SF1001–SF1001. 17 indexed citations

Yao, Yongzhao, Yoshihiro Sugawara, Daisaku Yokoe, et al.. (2021). Anisotropic radius of curvature of crystal planes in wide-bandgap semiconductor wafers measured by X-ray diffraction. Japanese Journal of Applied Physics. 60(12). 128004–128004. 1 indexed citations

Xia, Xinyi, Minghan Xian, Patrick H. Carey, et al.. (2021). Vertical β -Ga ₂ O ₃ Schottky rectifiers with 750 V reverse breakdown voltage at 600 K. Journal of Physics D Applied Physics. 54(30). 305103–305103. 16 indexed citations

Onuma, Takeyoshi, Kohei Sasaki, Tomohiro Yamaguchi, et al.. (2021). Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β -Ga2O3 substrate and homoepitaxial film. Applied Physics Letters. 118(25). 2 indexed citations

Masuya, Satoshi, Kohei Sasaki, Akito Kuramata, et al.. (2019). Characterization of crystalline defects in β -Ga ₂ O ₃ single crystals grown by edge-defined film-fed growth and halide vapor-phase epitaxy using synchrotron X-ray topography. Japanese Journal of Applied Physics. 58(5). 55501–55501. 47 indexed citations

Yang, Jiancheng, Chaker Fares, F. Ren, et al.. (2019). Switching Behavior and Forward Bias Degradation of 700V, 0.2A, β-Ga₂O₃Vertical Geometry Rectifiers. ECS Journal of Solid State Science and Technology. 8(7). Q3028–Q3033. 26 indexed citations

Sharma, Ribhu, Mark E. Law, Chaker Fares, et al.. (2019). The role of annealing ambient on diffusion of implanted Si in β-Ga2O3. AIP Advances. 9(8). 31 indexed citations

10.

Yang, Jiancheng, Minghan Xian, Patrick H. Carey, et al.. (2019). Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays. Applied Physics Letters. 114(23). 52 indexed citations

11.

Tadjer, Marko J., Chaker Fares, Nadeemullah A. Mahadik, et al.. (2019). Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga₂O₃. ECS Journal of Solid State Science and Technology. 8(7). Q3133–Q3139. 37 indexed citations

12.

Li, Wenshen, Zongyang Hu, Kazuki Nomoto, et al.. (2018). 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2. Applied Physics Letters. 113(20). 131 indexed citations

13.

Yang, Jiancheng, F. Ren, Marko J. Tadjer, S. J. Pearton, & Akito Kuramata. (2018). Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit. AIP Advances. 8(5). 75 indexed citations

14.

Hu, Zongyang, Kazuki Nomoto, Wenshen Li, et al.. (2018). Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors. Applied Physics Letters. 113(12). 142 indexed citations

15.

Fares, Chaker, F. Ren, Ribhu Sharma, et al.. (2018). Effects of fluorine incorporation into β-Ga2O3. Journal of Applied Physics. 123(16). 29 indexed citations

16.

Hashiguchi, Akihiro, Tomoya Moribayashi, Kimiyoshi Koshi, et al.. (2017). 結晶欠陥をもつ(001)β-Ga 2 O 3 基板上に作製したSchottky障壁ダイオードの電気的性質. Japanese Journal of Applied Physics. 56(8). 1–86501. 1 indexed citations

17.

Nakata, Yoshiaki, et al.. (2017). Enhancement-mode Ga 2 O 3 MOSFETs with Si-Ion-Implanted Source and Drain. The Japan Society of Applied Physics. 4 indexed citations

18.

Muhammed, Mufasila Mumthaz, Manuel A. Roldán, Yoshiyuki Yamashita, et al.. (2016). High-quality III-nitride films on conductive, transparent (201)-oriented β-Ga2O3 using a GaN buffer layer. Scientific Reports. 6(1). 29747–29747. 56 indexed citations

19.

Kasu, Makoto, Kenji Hanada, Tomoya Moribayashi, et al.. (2016). Relationship between crystal defects and leakage current in β-Ga. Japanese Journal of Applied Physics. 55(12). 7 indexed citations

20.

Akiyama, T., Mitsuru Ekawa, H. Sudo, et al.. (2005). Quantum dots for semiconductor optical amplifiers. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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