Akito Kuramata

21.9k citations

268 papers · 18.2k indexed · 8 hit papers · h-index 64

Electronic, Optical and Magnetic Materials top 0.02%
Materials Chemistry top 0.05%
Renewable Energy, Sustainability and the Environment top 0.1%
Electrical and Electronic Engineering top 1%
Condensed Matter Physics top 0.5%

Co-authors: Shigenobu Yamakoshi Kohei Sasaki Masataka Higashiwaki Takekazu Masui Hisashi Murakami Yoshinao Kumagai Man Hoi Wong S. J. Pearton
Topics: Ga2O3 and related materials (207 papers)ZnO doping and properties (192 papers)Advanced Photocatalysis Techniques (89 papers)
Cited by: Electronic, Optical and Magnetic Materials Renewable Energy, Sustainability and the Environment Materials Chemistry
Journals: SHILAP Revista de lepidopterologíaApplied Physics Letters Journal of Applied Physics
Partner nations: Japan United States South Korea

In The Last Decade

Akito Kuramata

264 papers receiving 17.6k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2012 1.5k citations Masataka Higashiwaki, Kohei Sasaki et al. Applied Physics Letters profile →
Recent progress in Ga₂O₃power devices

2016 910 citations Masataka Higashiwaki, Kohei Sasaki et al. profile →
High-quality β-Ga₂O₃ single crystals grown by edge-defined film-fed growth

2016 839 citations Akito Kuramata, Kimiyoshi Koshi et al. Japanese Journal of Applied Physics profile →
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

2013 602 citations Masataka Higashiwaki, Kohei Sasaki et al. Applied Physics Letters profile →
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

2012 514 citations Kohei Sasaki, Akito Kuramata et al. profile →
1-kV vertical Ga2O3 field-plated Schottky barrier diodes

2017 483 citations Keita Konishi, Akito Kuramata et al. Applied Physics Letters profile →
Field-Plated Ga₂O₃MOSFETs With a Breakdown Voltage of Over 750 V

2015 454 citations Kohei Sasaki, Akito Kuramata et al. IEEE Electron Device Letters profile →
Anisotropic thermal conductivity in single crystal β-gallium oxide

2015 430 citations Takekazu Masui, Akito Kuramata et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by Akito Kuramata

Since Specialization

Citations

This map shows the geographic impact of Akito Kuramata's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Akito Kuramata with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Akito Kuramata more than expected).

Fields of papers citing papers by Akito Kuramata

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Akito Kuramata. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Akito Kuramata. The network helps show where Akito Kuramata may publish in the future.

Co-authorship network of co-authors of Akito Kuramata

This figure shows the co-authorship network connecting the top 25 collaborators of Akito Kuramata. A scholar is included among the top collaborators of Akito Kuramata based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Akito Kuramata. Akito Kuramata is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Crack formation in strained β-(AlxGa1−x)2O3 films grown on (010) β-Ga2O3 substrates 2025 ·APL Materials ·(unknown),Kenny Huynh,Michael E. Liao,(unknown),Marko J. Tadjer,James Spencer Lundh,Kohei Sasaki,Keita Konishi,(unknown),Xianrong Huang,Michael Wojcik,Akito Kuramata,Karl D. Hobart,Mark S. Goorsky	0
2	Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β -Ga2O3 substrate and homoepitaxial film 2021 ·Applied Physics Letters ·Takeyoshi Onuma,Kohei Sasaki,Tomohiro Yamaguchi,Tohru Honda,Akito Kuramata,Shigenobu Yamakoshi,Masataka Higashiwaki	2
3	Origin of Red Emission in β‐Ga₂O₃ Analyzed by Cathodoluminescence and Photoluminescence Spectroscopy 2020 ·physica status solidi (b) ·G. Naresh‐Kumar,(unknown),(unknown),P. R. Edwards,Robert Martin,Daivasigamani Krishnamurthy,Kohei Sasaki,Akito Kuramata	27
4	The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 2019 ·AIP Advances ·Ribhu Sharma,Mark E. Law,Chaker Fares,Marko J. Tadjer,F. Ren,Akito Kuramata,S. J. Pearton	31
5	Switching Behavior and Forward Bias Degradation of 700V, 0.2A, β-Ga₂O₃Vertical Geometry Rectifiers 2019 ·ECS Journal of Solid State Science and Technology ·Jiancheng Yang,Chaker Fares,F. Ren,Yen‐Ting Chen,Yu‐Te Liao,(unknown),Jenshan Lin,Marko J. Tadjer,David J. Smith,S. J. Pearton,Akito Kuramata	26
6	Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga₂O₃Rectifiers 2019 ·ECS Journal of Solid State Science and Technology ·Jiancheng Yang,Chaker Fares,(unknown),Minghan Xian,F. Ren,S. J. Pearton,Marko J. Tadjer,Akito Kuramata	53
7	Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga₂O₃ 2019 ·ECS Journal of Solid State Science and Technology ·Marko J. Tadjer,Chaker Fares,Nadeemullah A. Mahadik,Jaime A. Freitas,David J. Smith,Ribhu Sharma,Mark E. Law,F. Ren,S. J. Pearton,Akito Kuramata	37
8	Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga₂O₃ Schottky Diodes 2019 ·ECS Journal of Solid State Science and Technology ·Yen‐Ting Chen,Jiancheng Yang,F. Ren,(unknown),Jenshan Lin,S. J. Pearton,Marko J. Tadjer,Akito Kuramata,Yu‐Te Liao	24
9	Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays 2019 ·Applied Physics Letters ·Jiancheng Yang,Minghan Xian,Patrick H. Carey,Chaker Fares,(unknown),F. Ren,Marko J. Tadjer,Elaf A. Anber,(unknown),Andrew C. Lang,James L. Hart,James E. Nathaniel,Mitra L. Taheri,S. J. Pearton,Akito Kuramata	52
10	Enhancement-Mode Ga₂O₃ Vertical Transistors With Breakdown Voltage >1 kV 2018 ·IEEE Electron Device Letters ·Zongyang Hu,Kazuki Nomoto,Wenshen Li,Nicholas Tanen,Kohei Sasaki,Akito Kuramata,Tohru Nakamura,Debdeep Jena,Huili Grace Xing	254
11	Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage 2018 ·Applied Physics Letters ·A. Y. Polyakov,N. B. Smirnov,Ivan Shchemerov,E. B. Yakimov,Jiancheng Yang,F. Ren,Gwangseok Yang,Jihyun Kim,Akito Kuramata,S. J. Pearton	125
12	Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors 2018 ·Applied Physics Letters ·Zongyang Hu,Kazuki Nomoto,Wenshen Li,Zexuan Zhang,Nicholas Tanen,Quang Tu Thieu,Kohei Sasaki,Akito Kuramata,Tohru Nakamura,Debdeep Jena,Huili Grace Xing	142
13	Effects of fluorine incorporation into β-Ga2O3 2018 ·Journal of Applied Physics ·(unknown),Chaker Fares,F. Ren,Ribhu Sharma,Erin Patrick,Mark E. Law,S. J. Pearton,Akito Kuramata	29
14	Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit 2018 ·AIP Advances ·Jiancheng Yang,F. Ren,Marko J. Tadjer,S. J. Pearton,Akito Kuramata	75
15	2300V Reverse Breakdown Voltage Ga₂O₃Schottky Rectifiers 2018 ·ECS Journal of Solid State Science and Technology ·Jiancheng Yang,F. Ren,Marko J. Tadjer,S. J. Pearton,Akito Kuramata	181
16	GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices 2018 ·Applied Physics Letters ·Idris A. Ajia,Yuichi Yamashita,K. Lorenz,Mufasila Mumthaz Muhammed,(unknown),Dhaifallah R. Almalawi,Jian Xu,(unknown),Y. Morishima,Dalaver H. Anjum,Nini Wei,Robert Martin,Akito Kuramata,Iman S. Roqan	47
17	Fabrication and Characterization of 2-inch (001) β-Ga 2 O 3 Wafers for Power devices 2016 ·The Japan Society of Applied Physics ·Takekazu Masui,Kimiyoshi Koshi,Shinya Watanabe,Akito Kuramata,(unknown)	1
18	Relationship between crystal defects and leakage current in β-Ga 2016 ·Japanese Journal of Applied Physics ·Makoto Kasu,Kenji Hanada,Tomoya Moribayashi,(unknown),Takayoshi Oshima,Toshiyuki Oishi,Kimiyoshi Koshi,Kohei Sasaki,Akito Kuramata,Osamu Ueda	7
19	Development of gallium oxide power devices (Phys. Status Solidi A 1∕2014) 2014 ·physica status solidi (a) ·Masataka Higashiwaki,Kohei Sasaki,Akito Kuramata,Takekazu Masui,Shigenobu Yamakoshi	39
20	Quantum dots for semiconductor optical amplifiers 2005 ·T. Akiyama,Mitsuru Ekawa,(unknown),H. Sudo,(unknown),Akito Kuramata,Mitsuru Sugawara,H. Ebe,Yasuhiko Arakawa	1

About Akito Kuramata

Akito Kuramata is a scholar working on Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment and Materials Chemistry, having authored 268 papers that have together received 18.2k indexed citations. Recurring topics across this work include Ga2O3 and related materials (207 papers), ZnO doping and properties (192 papers) and Advanced Photocatalysis Techniques (89 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (16.4k citations), Renewable Energy, Sustainability and the Environment (8.1k citations) and Materials Chemistry (16.0k citations). Akito Kuramata has collaborated with scholars based in Japan, United States and South Korea. Frequent co-authors include Shigenobu Yamakoshi, Kohei Sasaki, Masataka Higashiwaki, Takekazu Masui, Hisashi Murakami, Yoshinao Kumagai, Man Hoi Wong, S. J. Pearton, F. Ren and Ken Goto. Their work appears in journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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