Kohei Sasaki

15.0k total citations · 5 hit papers
189 papers, 12.2k citations indexed

About

Kohei Sasaki is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Renewable Energy, Sustainability and the Environment. According to data from OpenAlex, Kohei Sasaki has authored 189 papers receiving a total of 12.2k indexed citations (citations by other indexed papers that have themselves been cited), including 131 papers in Electronic, Optical and Magnetic Materials, 126 papers in Materials Chemistry and 50 papers in Renewable Energy, Sustainability and the Environment. Recurrent topics in Kohei Sasaki's work include Ga2O3 and related materials (130 papers), ZnO doping and properties (117 papers) and Electronic and Structural Properties of Oxides (52 papers). Kohei Sasaki is often cited by papers focused on Ga2O3 and related materials (130 papers), ZnO doping and properties (117 papers) and Electronic and Structural Properties of Oxides (52 papers). Kohei Sasaki collaborates with scholars based in Japan, United States and Sweden. Kohei Sasaki's co-authors include Akito Kuramata, Masataka Higashiwaki, Shigenobu Yamakoshi, Takekazu Masui, Man Hoi Wong, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu, Quang Tu Thieu and Takeyoshi Onuma and has published in prestigious journals such as Physical Review Letters, Blood and Applied Physics Letters.

In The Last Decade

Kohei Sasaki

183 papers receiving 11.9k citations

Hit Papers

Gallium oxide (Ga2O3) metal-semiconductor field-effect tr... 2012 2026 2016 2021 2012 2016 2013 2012 2015 400 800 1.2k
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
    2012 1.5k citations Masataka Higashiwaki, Kohei Sasaki et al. Applied Physics Letters profile →
  2. Recent progress in Ga2O3power devices
    2016 910 citations Masataka Higashiwaki, Kohei Sasaki et al. profile →
  3. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
    2013 602 citations Masataka Higashiwaki, Kohei Sasaki et al. Applied Physics Letters profile →
  4. Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
    2012 514 citations Kohei Sasaki, Akito Kuramata et al. profile →
  5. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V
    2015 454 citations Kohei Sasaki, Akito Kuramata et al. IEEE Electron Device Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kohei Sasaki Japan 51 11.1k 10.7k 5.5k 2.1k 1.1k 189 12.2k
Chunfu Zhang China 50 2.3k 0.2× 5.2k 0.5× 1.4k 0.3× 6.5k 3.1× 494 0.5× 374 9.1k
Masaki Azuma Japan 59 9.2k 0.8× 6.5k 0.6× 231 0.0× 1.6k 0.8× 7.3k 6.9× 395 13.8k
Koji Horiba Japan 36 2.0k 0.2× 2.6k 0.2× 645 0.1× 1.4k 0.7× 1.5k 1.4× 252 5.3k
Ai Leen Koh United States 41 2.4k 0.2× 4.8k 0.4× 2.7k 0.5× 3.7k 1.7× 80 0.1× 86 9.9k
Ken Goto Japan 28 2.6k 0.2× 2.6k 0.2× 1.3k 0.2× 828 0.4× 264 0.2× 108 3.5k
B. Martı́nez Spain 41 4.6k 0.4× 3.6k 0.3× 800 0.1× 635 0.3× 4.1k 3.9× 266 7.7k
Huaidong Jiang China 39 890 0.1× 2.8k 0.3× 1.6k 0.3× 1.7k 0.8× 228 0.2× 152 5.5k
Jae-Young Kim South Korea 20 993 0.1× 2.6k 0.2× 1.2k 0.2× 1.1k 0.5× 252 0.2× 71 4.9k
Wounjhang Park United States 36 1.2k 0.1× 2.3k 0.2× 1.1k 0.2× 1.7k 0.8× 70 0.1× 142 5.0k
Robert Sinclair United States 27 986 0.1× 2.4k 0.2× 544 0.1× 1.5k 0.7× 226 0.2× 78 4.6k

Countries citing papers authored by Kohei Sasaki

Since Specialization
Citations

This map shows the geographic impact of Kohei Sasaki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kohei Sasaki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kohei Sasaki more than expected).

Fields of papers citing papers by Kohei Sasaki

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kohei Sasaki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kohei Sasaki. The network helps show where Kohei Sasaki may publish in the future.

Co-authorship network of co-authors of Kohei Sasaki

This figure shows the co-authorship network connecting the top 25 collaborators of Kohei Sasaki. A scholar is included among the top collaborators of Kohei Sasaki based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kohei Sasaki. Kohei Sasaki is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Huynh, Kenny, Michael E. Liao, Marko J. Tadjer, et al.. (2025). Crack formation in strained β-(AlxGa1−x)2O3 films grown on (010) β-Ga2O3 substrates. APL Materials. 13(11).
2.
Gong, Hehe, Xin Yang, Matthew Porter, et al.. (2025). Reliability of NiO/β-Ga2O3 bipolar heterojunction. Applied Physics Letters. 126(1). 4 indexed citations
3.
Lundh, James Spencer, Tatyana I. Feygelson, Kohei Sasaki, et al.. (2024). Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond. Applied Physics Letters. 124(15). 9 indexed citations
4.
5.
Qin, Yuan, Ming Xiao, Matthew Porter, et al.. (2023). 10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C. IEEE Electron Device Letters. 44(8). 1268–1271. 57 indexed citations
6.
7.
Wang, Boyan, Ming Xiao, Joseph Spencer, et al.. (2022). 2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension. IEEE Electron Device Letters. 44(2). 221–224. 85 indexed citations
8.
Onuma, Takeyoshi, Kohei Sasaki, Tomohiro Yamaguchi, et al.. (2021). Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β -Ga2O3 substrate and homoepitaxial film. Applied Physics Letters. 118(25). 2 indexed citations
9.
Wang, Boyan, Ming Xiao, Cyril Buttay, et al.. (2021). Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging. IEEE Electron Device Letters. 42(8). 1132–1135. 42 indexed citations
10.
11.
Matsuya, Yusuke, Takeshi Kai, Tatsuhiko Sato, et al.. (2021). Verification of KURBUC-based ion track structure mode for proton and carbon ions in the PHITS code. Physics in Medicine and Biology. 66(6). 06NT02–06NT02. 23 indexed citations
12.
Wong, Hiu Yung, Ming Xiao, Boyan Wang, et al.. (2020). TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis With Experimental Demonstration. IEEE Journal of the Electron Devices Society. 8. 992–1000. 44 indexed citations
13.
Naresh‐Kumar, G., P. R. Edwards, Robert Martin, et al.. (2020). Origin of Red Emission in β‐Ga2O3 Analyzed by Cathodoluminescence and Photoluminescence Spectroscopy. physica status solidi (b). 258(2). 27 indexed citations
14.
Koyama, Takashi, Masatoshi Nakamoto, Kagayaki Morishima, et al.. (2019). A SNP in a Steroidogenic Enzyme Is Associated with Phenotypic Sex in Seriola Fishes. Current Biology. 29(11). 1901–1909.e8. 84 indexed citations
15.
Hu, Zongyang, Kazuki Nomoto, Wenshen Li, et al.. (2018). Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV. IEEE Electron Device Letters. 39(6). 869–872. 254 indexed citations
16.
Hu, Zongyang, Kazuki Nomoto, Wenshen Li, et al.. (2018). Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors. Applied Physics Letters. 113(12). 142 indexed citations
17.
Li, Wenshen, Zongyang Hu, Kazuki Nomoto, et al.. (2018). 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2. Applied Physics Letters. 113(20). 131 indexed citations
18.
Kasu, Makoto, Kenji Hanada, Tomoya Moribayashi, et al.. (2016). Relationship between crystal defects and leakage current in β-Ga. Japanese Journal of Applied Physics. 55(12). 7 indexed citations
19.
Higashiwaki, Masataka, Kohei Sasaki, Akito Kuramata, Takekazu Masui, & Shigenobu Yamakoshi. (2014). Development of gallium oxide power devices (Phys. Status Solidi A 1∕2014). physica status solidi (a). 211(1). 39 indexed citations
20.
Sasaki, Kohei, et al.. (2012). 単結晶β-Ga 2 O 3 (010)基板上の酸化ガリウム(Ga 2 O 3 )金属-半導体電界効果トランジスタ. Applied Physics Letters. 100(1). 13504. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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