A. Leycuras

810 total citations
53 papers, 686 citations indexed

About

A. Leycuras is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. Leycuras has authored 53 papers receiving a total of 686 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 27 papers in Atomic and Molecular Physics, and Optics and 15 papers in Materials Chemistry. Recurrent topics in A. Leycuras's work include Silicon Carbide Semiconductor Technologies (19 papers), Semiconductor materials and devices (19 papers) and Silicon Nanostructures and Photoluminescence (9 papers). A. Leycuras is often cited by papers focused on Silicon Carbide Semiconductor Technologies (19 papers), Semiconductor materials and devices (19 papers) and Silicon Nanostructures and Photoluminescence (9 papers). A. Leycuras collaborates with scholars based in France, Germany and Russia. A. Leycuras's co-authors include Thierry Chassagne, A. Freundlich, J. C. Grenet, Marc de Micheli, Pascal Baldi, Marcin Zieliński, Kacem El Hadi, Yu. N. Korkishko, C. Vèrié and V. A. Fedorov and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Optics Letters.

In The Last Decade

A. Leycuras

49 papers receiving 666 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Leycuras France 18 558 345 182 116 90 53 686
Laurent Auvray France 14 388 0.7× 282 0.8× 147 0.8× 88 0.8× 60 0.7× 49 495
N. A. Papanicolaou United States 19 838 1.5× 514 1.5× 71 0.4× 107 0.9× 59 0.7× 80 917
Naruhisa Miura Japan 17 769 1.4× 248 0.7× 127 0.7× 73 0.6× 112 1.2× 60 935
M. Mamor France 13 439 0.8× 333 1.0× 202 1.1× 42 0.4× 67 0.7× 53 549
S. Sriram United States 14 606 1.1× 180 0.5× 85 0.5× 52 0.4× 63 0.7× 53 670
G. D. Lian United States 10 341 0.6× 258 0.7× 402 2.2× 117 1.0× 70 0.8× 19 596
Y. Makita Japan 12 448 0.8× 360 1.0× 286 1.6× 57 0.5× 46 0.5× 50 569
B. Dietrich Germany 14 640 1.1× 377 1.1× 332 1.8× 230 2.0× 24 0.3× 43 809
Susumu Ninomiya Japan 6 319 0.6× 135 0.4× 343 1.9× 84 0.7× 63 0.7× 7 474
Seijiro Furukawa Japan 14 429 0.8× 207 0.6× 227 1.2× 61 0.5× 70 0.8× 37 560

Countries citing papers authored by A. Leycuras

Since Specialization
Citations

This map shows the geographic impact of A. Leycuras's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Leycuras with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Leycuras more than expected).

Fields of papers citing papers by A. Leycuras

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Leycuras. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Leycuras. The network helps show where A. Leycuras may publish in the future.

Co-authorship network of co-authors of A. Leycuras

This figure shows the co-authorship network connecting the top 25 collaborators of A. Leycuras. A scholar is included among the top collaborators of A. Leycuras based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Leycuras. A. Leycuras is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zieliński, Marcin, Marc Portail, Hervé Peyre, et al.. (2007). Trends in Dopant Incorporation for 3C-SiC Films on Silicon. Materials science forum. 556-557. 207–210. 6 indexed citations
2.
Chassagne, Thierry, Jean-François Michaud, A. Leycuras, et al.. (2007). Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates. Materials science forum. 556-557. 721–724. 7 indexed citations
3.
Zieliński, Marcin, et al.. (2006). Stress relaxation during the growth of 3C-SiC∕Si thin films. Applied Physics Letters. 89(13). 37 indexed citations
4.
Lee, W., Eric Moyen, Wulf Wulfhekel, et al.. (2006). Vertical nanopatterning of 6H-SiC(0001) surfaces using gold-metal nanotube membrane lithography. Applied Physics A. 83(3). 361–363. 8 indexed citations
5.
Ferro, Gabriel, Thierry Chassagne, A. Leycuras, François Cauwet, & Y. Monteil. (2006). Strain Tailoring in 3C‐SiC Heteroepitaxial Layers Grown on Si(100). Chemical Vapor Deposition. 12(8-9). 483–488. 29 indexed citations
6.
Portail, Marc, S. Saada, Jean‐Charles Arnault, et al.. (2005). Behaviour of the 3C–SiC(100) c(2 × 2) (C‐terminated) and 3 × 2 (Si‐rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures. physica status solidi (a). 202(11). 2234–2239. 3 indexed citations
7.
Pezoldt, Joerg, Efstathios K. Polychroniadis, Thomas Stauden, et al.. (2005). Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification. Materials science forum. 483-485. 213–216. 2 indexed citations
8.
Chassagne, Thierry, et al.. (2004). Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls". Materials science forum. 457-460. 273–276. 25 indexed citations
9.
10.
Leycuras, A.. (2000). Growth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed Reactor. Materials science forum. 338-342. 241–244. 39 indexed citations
11.
Bluet, Jean‐Marie, J. Camassel, L. A. Falkovsky, & A. Leycuras. (1997). Optical investigation of thick 3CSiC layers deposited on bulk silicon by CVD. Diamond and Related Materials. 6(10). 1385–1387. 3 indexed citations
12.
Leycuras, A., et al.. (1995). In situ laser reflectometry study of the morphology of Ge/GaAs layers during their heteroepitaxial growth. Journal of Applied Physics. 78(9). 5680–5685. 7 indexed citations
13.
Vèrié, C., B. Beaumont, J. C. Guillaume, et al.. (1991). Novel high efficiency multispectral photovoltaic structures for solar energy conversion in space. 403–410. 3 indexed citations
14.
Freundlich, A., M. Leroux, J. C. Grenet, et al.. (1989). GaAs cells on Si substrates: A new challenge for space photovoltaic applications. ESASP. 2. 495–499. 1 indexed citations
15.
Freundlich, A., J. C. Grenet, G. Neu, A. Leycuras, & C. Vèrié. (1988). Heteroepitaxy of GaAs on Si: The effect of i n s i t u thermal annealing under AsH3. Applied Physics Letters. 52(23). 1976–1978. 36 indexed citations
16.
Freundlich, A., A. Leycuras, J. C. Grenet, C. Vèrié, & Pham V. Huong. (1987). Evidence by Raman spectroscopy and x-ray diffraction of a strong influence of H2O traces on the metalorganic vapor phase epitaxy of GaAs on Si. Applied Physics Letters. 51(17). 1352–1354. 25 indexed citations
17.
Leycuras, A. & D. Levesque. (1985). Molecular-dynamics simulation of excess-electron transport in simple fluids. Physical review. A, General physics. 32(2). 1180–1184. 1 indexed citations
18.
Leycuras, A., et al.. (1982). Molecular dynamics and excess electron drift velocity in non polar fluids. Journal of Electrostatics. 12. 73–78. 2 indexed citations
19.
20.
Leycuras, A., et al.. (1972). A contribution to accurate study of mercury vapor in the metal-insulator transition range of densities. Journal of Non-Crystalline Solids. 8-10. 722–722. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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