L. Bailón

702 total citations
62 papers, 587 citations indexed

About

L. Bailón is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, L. Bailón has authored 62 papers receiving a total of 587 indexed citations (citations by other indexed papers that have themselves been cited), including 61 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 12 papers in Computational Mechanics. Recurrent topics in L. Bailón's work include Semiconductor materials and devices (37 papers), Silicon and Solar Cell Technologies (24 papers) and Semiconductor materials and interfaces (18 papers). L. Bailón is often cited by papers focused on Semiconductor materials and devices (37 papers), Silicon and Solar Cell Technologies (24 papers) and Semiconductor materials and interfaces (18 papers). L. Bailón collaborates with scholars based in Spain, Finland and Estonia. L. Bailón's co-authors include S. Dueñas, J. Barbolla, Helena Castán, H. García, M. Jaraı́z, Kaupo Kukli, A. Gómez, Mikko Ritala, Markku Leskelä and J. Arias and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

L. Bailón

58 papers receiving 556 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Bailón Spain 15 534 201 172 69 63 62 587
Danielle Vanhaeren Belgium 13 381 0.7× 153 0.8× 165 1.0× 45 0.7× 48 0.8× 38 460
R. Carin France 13 470 0.9× 115 0.6× 103 0.6× 50 0.7× 47 0.7× 44 545
A. Kalnitsky United States 13 529 1.0× 186 0.9× 112 0.7× 30 0.4× 50 0.8× 47 602
Yiwei Lu United States 10 352 0.7× 299 1.5× 73 0.4× 59 0.9× 40 0.6× 21 449
C. W. Kim South Korea 11 334 0.6× 196 1.0× 72 0.4× 28 0.4× 67 1.1× 21 419
L. Manchanda United States 15 828 1.6× 370 1.8× 150 0.9× 33 0.5× 146 2.3× 31 912
Masayasu Nishizawa Japan 10 381 0.7× 199 1.0× 184 1.1× 18 0.3× 37 0.6× 30 467
Y. Ohmura Japan 12 414 0.8× 194 1.0× 171 1.0× 77 1.1× 27 0.4× 58 522
Y. Makita Japan 12 448 0.8× 286 1.4× 360 2.1× 33 0.5× 46 0.7× 50 569
T. K. Chan Singapore 13 299 0.6× 427 2.1× 95 0.6× 93 1.3× 79 1.3× 33 601

Countries citing papers authored by L. Bailón

Since Specialization
Citations

This map shows the geographic impact of L. Bailón's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Bailón with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Bailón more than expected).

Fields of papers citing papers by L. Bailón

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Bailón. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Bailón. The network helps show where L. Bailón may publish in the future.

Co-authorship network of co-authors of L. Bailón

This figure shows the co-authorship network connecting the top 25 collaborators of L. Bailón. A scholar is included among the top collaborators of L. Bailón based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Bailón. L. Bailón is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Castán, Helena, S. Dueñas, H. García, et al.. (2015). Charge and current hysteresis in dysprosium-doped zirconium oxide thin films. Microelectronic Engineering. 147. 55–58. 3 indexed citations
2.
Castán, Helena, H. García, S. Dueñas, et al.. (2015). Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications. Applied Physics Letters. 106(2). 16 indexed citations
3.
García, H., et al.. (2013). Photocurrent measurements for solar cells characterization. 349–352. 1 indexed citations
4.
García, H., S. Dueñas, Helena Castán, et al.. (2009). Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 416–420. 18 indexed citations
5.
García, H., S. Dueñas, Helena Castán, et al.. (2009). Electrical characterization of high-k based MIS capacitors using flat-band voltage transients. 223–226. 1 indexed citations
6.
García, H., S. Dueñas, Helena Castán, et al.. (2008). Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon. Journal of Applied Physics. 104(9). 20 indexed citations
7.
Dueñas, S., Helena Castán, H. García, et al.. (2008). Comparative Study of Flatband Voltage Transients on High-k Dielectric-Based Metal–Insulator–Semiconductor Capacitors. Journal of The Electrochemical Society. 155(11). G241–G241. 6 indexed citations
8.
García, H., S. Dueñas, Helena Castán, et al.. (2007). Identification of spatial localization and energetic position of electrically active defects in amorphous high-k dielectrics for advanced devices. Journal of Non-Crystalline Solids. 354(2-9). 393–398. 5 indexed citations
9.
Dueñas, S., Helena Castán, H. García, et al.. (2007). Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-kgate dielectrics. Semiconductor Science and Technology. 22(12). 1344–1351. 15 indexed citations
10.
Dueñas, S., Helena Castán, H. García, et al.. (2006). Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon. Journal of Applied Physics. 100(9). 8 indexed citations
11.
Marqués, Luis A., Lourdes Pelaz, Iván Santos, L. Bailón, & J. Barbolla. (2005). Study of the amorphous phase of silicon using molecular dynamics simulation techniques. 49. 405–408. 1 indexed citations
12.
Pelaz, Lourdes, et al.. (2005). Damage buildup model with dose rate and temperature dependence. 202. 435–437.
13.
Pelaz, Lourdes, Luis A. Marqués, L. Bailón, & J. Barbolla. (2002). Design of vertical power MOSFETs in SiC. 1. 363–368.
14.
Marqués, Luis A., et al.. (1997). Molecular dynamics simulations of ion bombardment processes. Materials Science and Technology. 13(11). 893–896. 1 indexed citations
15.
Bailón, L., et al.. (1997). Numerical study of avalanche breakdown of 6H-SiC planar p-n junctions. Diamond and Related Materials. 6(10). 1500–1503. 1 indexed citations
16.
Arias, J., M. Jaraı́z, Lourdes Pelaz, L. Bailón, & J. Barbolla. (1995). Low energy ion implantation simulation using a modified binary collision approximation code. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 102(1-4). 228–231. 4 indexed citations
17.
Rubio, J.E., Luis A. Marqués, M. Jaraı́z, L. Bailón, & J. Barbolla. (1995). Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 102(1-4). 301–304. 14 indexed citations
18.
Jaraı́z, M., J. Arias, J.E. Rubio, L. Bailón, & J. Barbolla. (1993). Computer simulation of point-defect distributions generated by ion implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 80-81. 172–175. 6 indexed citations
19.
Castán, Helena, et al.. (1990). Rie-induced damage in MOS structures. Solid-State Electronics. 33(11). 1419–1423. 1 indexed citations
20.
Collet, J., et al.. (1973). New methods for carrier lifetime measurements in structures. Solid-State Electronics. 16(9). 999–1005. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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