J. Hicks

3.0k total citations
40 papers, 681 citations indexed

About

J. Hicks is a scholar working on Electrical and Electronic Engineering, Geometry and Topology and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. Hicks has authored 40 papers receiving a total of 681 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 8 papers in Geometry and Topology and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. Hicks's work include Semiconductor materials and devices (22 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers) and Advancements in Semiconductor Devices and Circuit Design (16 papers). J. Hicks is often cited by papers focused on Semiconductor materials and devices (22 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers) and Advancements in Semiconductor Devices and Circuit Design (16 papers). J. Hicks collaborates with scholars based in United States, United Kingdom and Greece. J. Hicks's co-authors include S. Ramey, C. Auth, C. Prasad, Robert B. Miller, Anisur Rahman, S. Novak, M. Hattendorf, R. James, A. St. Amour and C. Wiegand and has published in prestigious journals such as SHILAP Revista de lepidopterología, IEEE Transactions on Nuclear Science and Advances in Mathematics.

In The Last Decade

J. Hicks

38 papers receiving 652 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Hicks United States 14 635 93 56 30 28 40 681
Yidnekachew S. Mekonnen United States 6 303 0.5× 62 0.7× 18 0.3× 16 0.5× 13 0.5× 15 337
Rogier Baert Belgium 14 662 1.0× 116 1.2× 133 2.4× 67 2.2× 61 2.2× 39 779
Odysseas Zografos Belgium 14 456 0.7× 38 0.4× 64 1.1× 160 5.3× 41 1.5× 63 554
J.-H. Chern United States 8 374 0.6× 102 1.1× 22 0.4× 24 0.8× 7 0.3× 24 414
S. Mudanai United States 16 809 1.3× 77 0.8× 12 0.2× 92 3.1× 51 1.8× 37 835
C. Prasad United States 15 494 0.8× 36 0.4× 17 0.3× 156 5.2× 42 1.5× 54 596
P.K. Chatterjee United States 12 381 0.6× 37 0.4× 16 0.3× 43 1.4× 22 0.8× 29 420
S. M. Alam United States 11 271 0.4× 24 0.3× 101 1.8× 163 5.4× 31 1.1× 16 334
H. Oda Japan 12 466 0.7× 30 0.3× 9 0.2× 24 0.8× 28 1.0× 70 489
Ickhyun Song United States 15 705 1.1× 32 0.3× 16 0.3× 59 2.0× 28 1.0× 75 753

Countries citing papers authored by J. Hicks

Since Specialization
Citations

This map shows the geographic impact of J. Hicks's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Hicks with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Hicks more than expected).

Fields of papers citing papers by J. Hicks

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Hicks. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Hicks. The network helps show where J. Hicks may publish in the future.

Co-authorship network of co-authors of J. Hicks

This figure shows the co-authorship network connecting the top 25 collaborators of J. Hicks. A scholar is included among the top collaborators of J. Hicks based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Hicks. J. Hicks is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Hicks, J.. (2025). Realizability in tropical geometry and unobstructedness of Lagrangian submanifolds. Geometry & Topology. 29(4). 1909–1973.
3.
Hicks, J.. (2024). Wall-crossing from Lagrangian cobordisms. Algebraic & Geometric Topology. 24(6). 3069–3138. 1 indexed citations
4.
Hicks, J., et al.. (2024). Resolutions of toric subvarieties by line bundles and applications. SHILAP Revista de lepidopterología. 12. 3 indexed citations
5.
Hicks, J., et al.. (2024). A short computation of the Rouquier dimension for a cycle of projective lines. St Andrews Research Repository (St Andrews Research Repository). 11(56). 653–663. 1 indexed citations
6.
Hicks, J.. (2023). Lagrangian cobordisms and Lagrangian surgery. Commentarii Mathematici Helvetici. 98(3). 509–595. 1 indexed citations
7.
8.
Hicks, J.. (2020). Tropical Lagrangian hypersurfaces are unobstructed. Journal of Topology. 13(4). 1409–1454. 9 indexed citations
9.
Connor, Chris, Tanmoy Pramanik, J. Hicks, et al.. (2019). eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology. 6 indexed citations
10.
Griggio, Flavio, J. Palmer, Nikholas G. Toledo, et al.. (2018). Reliability of dual-damascene local interconnects featuring cobalt on 10 nm logic technology. 6E.3–1. 44 indexed citations
11.
Seifert, N., Shah M. Jahinuzzaman, Jyothi Velamala, et al.. (2015). Soft Error Rate Improvements in 14-nm Technology Featuring Second-Generation 3D Tri-Gate Transistors. IEEE Transactions on Nuclear Science. 62(6). 2570–2577. 83 indexed citations
12.
Ramey, S. & J. Hicks. (2014). SILC and gate oxide breakdown characterization of 22nm tri-gate technology. 3C.2.1–3C.2.5. 3 indexed citations
13.
Ramey, S., C. Auth, Jason Clifford, et al.. (2013). Intrinsic transistor reliability improvements from 22nm tri-gate technology. 4C.5.1–4C.5.5. 137 indexed citations
14.
15.
Leatherman, G., et al.. (2013). Transistor Performance Impact Due to Die–Package Mechanical Stress. IEEE Transactions on Device and Materials Reliability. 13(2). 350–356. 5 indexed citations
16.
Leatherman, G., et al.. (2012). Die-package stress interaction impact on transistor performance. 2E.4.1–2E.4.6. 16 indexed citations
17.
He, Jun, et al.. (2011). Characterization and challenge of TDDB reliability in Cu/low K dielectric interconnect. 2C.1.1–2C.1.4. 8 indexed citations
18.
19.
Pae, Sangwoo, T. Ghani, M. Hattendorf, et al.. (2009). Characterization of SILC and its end-of-life reliability assessment on 45NM high-K and metal-gate technology. 12. 499–504. 10 indexed citations
20.
Miller, Robert B., et al.. (1999). Reliability versus yield and die location in advanced VLSI. Microelectronics Reliability. 39(6-7). 741–749. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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