I. Post

2.0k citations

20 papers · 360 indexed · h-index 9

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 16
- Advancements in Semiconductor Devices and Circuit Design 14
- Radio Frequency Integrated Circuit Design 4
- Integrated Circuits and Semiconductor Failure Analysis 4
- Thin-Film Transistor Technologies 2
- Electrostatic Discharge in Electronics 2
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 4
Hardware and Architecture
Materials Chemistry
- Silicon Nanostructures and Photoluminescence 3
Biomedical Engineering

Co-authors: P. Ashburn P. Packan Kelin J. Kuhn C. J. Gibbings D. J. Godfrey M. Hattendorf D. Becher C. G. Tuppen
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Hardware and Architecture
Journals: IEEE Transactions on Electron Devices (3 papers)Microelectronic Engineering (2 papers)IEEE Electron Device Letters (1 paper)
Partner nations: United Kingdom United States

In The Last Decade

I. Post

19 papers receiving 349 citations

Peers

Countries citing papers authored by I. Post

Since Specialization

Citations

This map shows the geographic impact of I. Post's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Post with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Post more than expected).

Fields of papers citing papers by I. Post

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Post. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Post. The network helps show where I. Post may publish in the future.

Co-authorship network

The 25 scholars most cited alongside I. Post, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I. Post Line = papers co-authored together I. Post links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Bias temperature instability variation on SiON/Poly, HK/MG and trigate architectures C. Prasad,M. Agostinelli,J. Hicks,S. Ramey,C. Auth,K. Mistry,S. Natarajan,P. Packan,I. Post,恵一小柳,M.D. Giles,Sarthak Gupta,S. Mudanai,Kelin J. Kuhn	2014	34
2	Reliability studies on a 45nm low power system-on-chip (SoC) dual gate oxide high-k / metal gate (DG HK+MG) technology C. Prasad,Peng Bai,Calle Arevalo Luis,W. Hafez,J. Hicks,D C Namarika,Jyi-Tsong Lin,葛海波,K. Komeyli,R. Kotlyar,K. Mistry,I. Post,C. Tsai	2010	5
3	Future device scaling - Beyond traditional CMOS S. Tyagi,C. Auth,Ibrahim Ban,Peter Chang,R. Chau,T. Ghani,Piotr Czubla,J. Kavalieros,Kelin J. Kuhn,J. Maiz,K. Mistry,I. Post	2009	1
4	A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications Yuxiao Wang,Jiefeng Lin,Yat Hon Ng,I. Post,Obata Kenzo,Yu Zhang,Kedong Zhang,M. Bohr,E Munos,Uma Bhattacharya,Anthony G. Costantini,Fatih Hamzaoglu,W. Hafez,C.-H. Jan,Ingrid Yesenia Riveros Rosas,S. Kulkarni	2007	25
5	A 65nm CMOS SOC Technology Featuring Strained Silicon Transistors for RF Applications I. Post,M.S. Akbar,G. Curello,Calle Arevalo Luis,W. Hafez,U. Jalan,K. Komeyli,Jiefeng Lin,N. Lindert,Jang Hyeok Park,J. Rizk,C. Flüegel,C. Tsai,David Yeh,Peng Bai,C.-H. Jan	2006	37
6	A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications Kelin J. Kuhn,Fernando Christofoletti,D. Becher,M. Hattendorf,P. Packan,I. Post,P. Vandervoorn,Ian A. Young	2004	43
7	Source/drain extension scaling for 0.1 μm and below channel length MOSFETs Scott E. Thompson,P. Packan,T. Ghani,M. Stettler,M. Alavi,I. Post,S. Tyagi,C. Mulinix,Shixuan Yang,M. Bohr	2002	28
8	Modeling and characterization of noise of polysilicon emitter bipolar transistors Coral Fontes Gutiérrez,W. Redman-White,P. Ashburn,I. Post	2002	4
9	ACUTE: a high performance analog complementary polysilicon emitter bipolar technology utilizing SOI/trench full dielectric isolation Conseil de chimie,I. Post,Joy Ogbemudia,P. Veena,Stacie Palmer,Dennis R. Williams	2002	2
10	Scaling challenges for 0.13 μm generation shallow trench isolation Kelin J. Kuhn,I. Miguel,I. Post,J. Neirynck	2002	4
11	Analysis and modeling of the base currents of Si/Si1−xGex heterojunction bipolar transistors fabricated in high and low oxygen content material Journal of Applied Physics ·BITRA MADHUMITHA,P. Ashburn,I. Post,David J. Robbins,Wai Yie Leong,C. J. Gibbings,S. Nigrin	1995	9
12	Si 1-x ,Ge x Heterojunction Bipolar Transistors: the future of silicon bipolar technology or not? European Solid-State Device Research Conference ·Rosa Maria Scavarelli,BITRA MADHUMITHA,I. Post,Ilham	1993	2
13	Characterisation of heterojunction bipolar transistors incorporating Si/Si1−xGex epitaxial double layers with n+ emitter implants Microelectronic Engineering ·Burbano Rivera,Vineet Gupta,J. L. Glasper,A. J. Pidduck,D. Boruch,I. Post,BITRA MADHUMITHA,P. Ashburn	1992	5
14	Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experiment IEEE Transactions on Electron Devices ·I. Post,P. Ashburn,Manuel Gustavo Palacio Peralta	1992	87
15	The use of an interface anneal to control the base current and emitter resistance of p-n-p polysilicon emitter bipolar transistors IEEE Electron Device Letters ·I. Post,P. Ashburn	1992	1
16	Investigation of boron diffusion in polysilicon and its application to the design of p-n-p polysilicon emitter bipolar transistors with shallow emitter junctions IEEE Transactions on Electron Devices ·I. Post,P. Ashburn	1991	32
17	Rapid thermal annealing of metastable and stable Si/Si1−xGex heterojunction bipolar transistors Microelectronic Engineering ·BITRA MADHUMITHA,Mateusz Maternia,J. S. Whitehurst,P. Ashburn,D. J. Godfrey,Hakan Tanrıverdi,I. Post,C. G. Tuppen,G. R. Booker,Mark Jones	1991	5
18	The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors IEEE Transactions on Electron Devices ·BITRA MADHUMITHA,C. J. Gibbings,P. Ashburn,I. Post,C. G. Tuppen,D. J. Godfrey	1991	28
19	Low frequency noise of npn/pnp polysilicon emitter bipolar transistors ePrints Soton (University of Southampton) ·Coral Fontes Gutiérrez,W. Redman-White,P. Ashburn,I. Post	1990	3
20	Electrical method for measuring emitter depth of shallow bipolar transistors Electronics Letters ·I. Post,P. Ashburn	1990	5

About I. Post

I. Post is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 20 papers that have together received 360 indexed citations. Recurring topics across this work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers), Radio Frequency Integrated Circuit Design (4 papers), Semiconductor materials and interfaces (4 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers), Silicon Nanostructures and Photoluminescence (3 papers), Thin-Film Transistor Technologies (2 papers) and Electrostatic Discharge in Electronics (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (354 citations), Atomic and Molecular Physics, and Optics (89 citations) and Hardware and Architecture (12 citations). I. Post has collaborated with scholars based in United Kingdom and United States. Frequent co-authors include P. Ashburn, P. Packan, Kelin J. Kuhn, C. J. Gibbings, D. J. Godfrey, M. Hattendorf, D. Becher, C. G. Tuppen, Ian A. Young and P. Vandervoorn. Their work appears in journals such as IEEE Transactions on Electron Devices, Microelectronic Engineering, IEEE Electron Device Letters, Electronics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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