I. Post

2.0k total citations
20 papers, 360 citations indexed

About

I. Post is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, I. Post has authored 20 papers receiving a total of 360 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in I. Post's work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Radio Frequency Integrated Circuit Design (4 papers). I. Post is often cited by papers focused on Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Radio Frequency Integrated Circuit Design (4 papers). I. Post collaborates with scholars based in United Kingdom and United States. I. Post's co-authors include P. Ashburn, P. Packan, Kelin J. Kuhn, C. J. Gibbings, C. G. Tuppen, D. J. Godfrey, P. Vandervoorn, Ian A. Young, D. Becher and M. Hattendorf and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

I. Post

19 papers receiving 349 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
I. Post United Kingdom 9 354 89 33 30 12 20 360
M. Foisy United States 9 443 1.3× 172 1.9× 27 0.8× 63 2.1× 9 0.8× 31 458
L. Lanzerotti United States 10 328 0.9× 81 0.9× 15 0.5× 21 0.7× 6 0.5× 23 335
Jung-Suk Goo United States 13 616 1.7× 89 1.0× 44 1.3× 87 2.9× 13 1.1× 43 626
E. Ohue Japan 14 484 1.4× 113 1.3× 21 0.6× 47 1.6× 11 0.9× 49 487
B.M. Haugerud United States 11 331 0.9× 45 0.5× 18 0.5× 37 1.2× 19 1.6× 18 342
S. Springer United States 8 293 0.8× 37 0.4× 20 0.6× 34 1.1× 24 2.0× 12 298
G. Chindalore United States 10 384 1.1× 103 1.2× 36 1.1× 25 0.8× 6 0.5× 17 390
K.J. Herrick United States 10 372 1.1× 65 0.7× 14 0.4× 47 1.6× 3 0.3× 27 385
J.T. Watt United States 11 395 1.1× 86 1.0× 17 0.5× 38 1.3× 37 3.1× 23 415
F. Nouri United States 11 507 1.4× 43 0.5× 28 0.8× 58 1.9× 16 1.3× 28 524

Countries citing papers authored by I. Post

Since Specialization
Citations

This map shows the geographic impact of I. Post's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Post with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Post more than expected).

Fields of papers citing papers by I. Post

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Post. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Post. The network helps show where I. Post may publish in the future.

Co-authorship network of co-authors of I. Post

This figure shows the co-authorship network connecting the top 25 collaborators of I. Post. A scholar is included among the top collaborators of I. Post based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Post. I. Post is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Prasad, C., M. Agostinelli, J. Hicks, et al.. (2014). Bias temperature instability variation on SiON/Poly, HK/MG and trigate architectures. 6A.5.1–6A.5.7. 34 indexed citations
2.
Prasad, C., Peng Bai, W. Hafez, et al.. (2010). Reliability studies on a 45nm low power system-on-chip (SoC) dual gate oxide high-k / metal gate (DG HK+MG) technology. 293–298. 5 indexed citations
3.
Tyagi, S., C. Auth, Ibrahim Ban, et al.. (2009). Future device scaling - Beyond traditional CMOS. 1–4. 1 indexed citations
4.
Wang, Yuxiao, Jiefeng Lin, Yat Hon Ng, et al.. (2007). A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications. 324–606. 25 indexed citations
5.
Post, I., M.S. Akbar, G. Curello, et al.. (2006). A 65nm CMOS SOC Technology Featuring Strained Silicon Transistors for RF Applications. 1–3. 37 indexed citations
6.
Kuhn, Kelin J., D. Becher, M. Hattendorf, et al.. (2004). A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications. 224–225. 43 indexed citations
7.
Thompson, Scott E., P. Packan, T. Ghani, et al.. (2002). Source/drain extension scaling for 0.1 μm and below channel length MOSFETs. 132–133. 28 indexed citations
8.
Redman-White, W., et al.. (2002). Modeling and characterization of noise of polysilicon emitter bipolar transistors. 34. 236–238. 4 indexed citations
9.
10.
Kuhn, Kelin J., et al.. (2002). Scaling challenges for 0.13 μm generation shallow trench isolation. 187–190. 4 indexed citations
11.
Ashburn, P., et al.. (1995). Analysis and modeling of the base currents of Si/Si1−xGex heterojunction bipolar transistors fabricated in high and low oxygen content material. Journal of Applied Physics. 78(4). 2823–2829. 9 indexed citations
12.
Post, I., et al.. (1993). Si 1-x ,Ge x Heterojunction Bipolar Transistors: the future of silicon bipolar technology or not?. European Solid-State Device Research Conference. 301–308. 2 indexed citations
13.
Glasper, J. L., et al.. (1992). Characterisation of heterojunction bipolar transistors incorporating Si/Si1−xGex epitaxial double layers with n+ emitter implants. Microelectronic Engineering. 19(1-4). 447–450. 5 indexed citations
14.
Post, I., et al.. (1992). Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experiment. IEEE Transactions on Electron Devices. 39(7). 1717–1731. 87 indexed citations
15.
Post, I. & P. Ashburn. (1992). The use of an interface anneal to control the base current and emitter resistance of p-n-p polysilicon emitter bipolar transistors. IEEE Electron Device Letters. 13(8). 408–410. 1 indexed citations
16.
Post, I. & P. Ashburn. (1991). Investigation of boron diffusion in polysilicon and its application to the design of p-n-p polysilicon emitter bipolar transistors with shallow emitter junctions. IEEE Transactions on Electron Devices. 38(11). 2442–2451. 32 indexed citations
17.
Whitehurst, J. S., P. Ashburn, D. J. Godfrey, et al.. (1991). Rapid thermal annealing of metastable and stable Si/Si1−xGex heterojunction bipolar transistors. Microelectronic Engineering. 15(1-4). 135–138. 5 indexed citations
18.
Gibbings, C. J., et al.. (1991). The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors. IEEE Transactions on Electron Devices. 38(8). 1973–1976. 28 indexed citations
19.
Redman-White, W., et al.. (1990). Low frequency noise of npn/pnp polysilicon emitter bipolar transistors. ePrints Soton (University of Southampton). 341–344. 3 indexed citations
20.
Post, I. & P. Ashburn. (1990). Electrical method for measuring emitter depth of shallow bipolar transistors. Electronics Letters. 26(1). 30–31. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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