M. Hattendorf

2.8k total citations
17 papers, 365 citations indexed

About

M. Hattendorf is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, M. Hattendorf has authored 17 papers receiving a total of 365 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 3 papers in Condensed Matter Physics. Recurrent topics in M. Hattendorf's work include Advancements in Semiconductor Devices and Circuit Design (7 papers), Radio Frequency Integrated Circuit Design (6 papers) and Semiconductor Lasers and Optical Devices (6 papers). M. Hattendorf is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (7 papers), Radio Frequency Integrated Circuit Design (6 papers) and Semiconductor Lasers and Optical Devices (6 papers). M. Hattendorf collaborates with scholars based in United States. M. Hattendorf's co-authors include M. Feng, J. Hicks, C. Auth, S. Ramey, A. St. Amour, Anisur Rahman, R. James, C. Wiegand, Jason Clifford and D. Becher and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

M. Hattendorf

16 papers receiving 357 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Hattendorf United States	9	355	84	54	46	17	17	365
J. Gering United States	11	287 0.8×	163 1.9×	47 0.9×	35 0.8×	8 0.5×	26	311
K. Sakuno Japan	11	272 0.8×	31 0.4×	74 1.4×	37 0.8×	29 1.7×	36	297
S. Sugitani Japan	13	408 1.1×	78 0.9×	55 1.0×	42 0.9×	17 1.0×	37	417
R. van Dalen Belgium	10	275 0.8×	111 1.3×	41 0.8×	17 0.4×	22 1.3×	32	338
D.C. D’Avanzo United States	12	355 1.0×	126 1.5×	45 0.8×	41 0.9×	7 0.4×	24	374
George B. Norris United States	11	278 0.8×	85 1.0×	31 0.6×	21 0.5×	12 0.7×	23	328
Kong-Beng Thei Taiwan	11	249 0.7×	142 1.7×	26 0.5×	47 1.0×	6 0.4×	27	267
Michael Mack United States	8	159 0.4×	94 1.1×	70 1.3×	73 1.6×	19 1.1×	13	231
A.T. Wu United States	13	417 1.2×	104 1.2×	19 0.4×	27 0.6×	12 0.7×	28	434
Mattias Südow Sweden	10	390 1.1×	65 0.8×	228 4.2×	23 0.5×	18 1.1×	19	405

Countries citing papers authored by M. Hattendorf

Since Specialization

Citations

This map shows the geographic impact of M. Hattendorf's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Hattendorf with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Hattendorf more than expected).

Fields of papers citing papers by M. Hattendorf

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Hattendorf. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Hattendorf. The network helps show where M. Hattendorf may publish in the future.

Co-authorship network of co-authors of M. Hattendorf

This figure shows the co-authorship network connecting the top 25 collaborators of M. Hattendorf. A scholar is included among the top collaborators of M. Hattendorf based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Hattendorf. M. Hattendorf is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

Ramey, S., C. Auth, Jason Clifford, et al.. (2013). Intrinsic transistor reliability improvements from 22nm tri-gate technology. 4C.5.1–4C.5.5. 137 indexed citations

Pae, Sangwoo, T. Ghani, M. Hattendorf, et al.. (2009). Characterization of SILC and its end-of-life reliability assessment on 45NM high-K and metal-gate technology. 12. 499–504. 10 indexed citations

Packan, P., S. Cea, H. Deshpande, et al.. (2008). High performance Hi-K + metal gate strain enhanced transistors on (110) silicon. 1–4. 44 indexed citations

Kuhn, Kelin J., D. Becher, M. Hattendorf, et al.. (2004). A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications. 224–225. 43 indexed citations

Fendrich, J. A., et al.. (2003). W-band InGaP/GaAs HBT MMIC frequency sources. 1. 239–242. 1 indexed citations

Hattendorf, M., et al.. (2002). Impact of 1/f noise in Ka-band InGaP/GaAs HBT frequency sources. 2. 1209–1212. 3 indexed citations

Hattendorf, M., et al.. (2002). Sub-micron Scaling of High-Speed InP/InGaAs SHBTs Grown by MOCVD using Carbon as the p-Type Dopant. 5 indexed citations

Becher, D., R. Chan, M. Hattendorf, & M. Feng. (2002). Reliability Study of Low-Voltage RF MEMS Switches. 19 indexed citations

Huang, Jian‐Jang, et al.. (2001). Material Design and Qualification on Power InGaP HBTs for 2.4 GHz Transmitter Application. 1 indexed citations

10.

Hattendorf, M., et al.. (2001). Incorporation of an Alloy-Though Passivating-Ledge Process into a Fully Self- Aligned InGaP/GaAs HBT Process.

11.

Hattendorf, M., et al.. (2001). Method to determine intrinsic and extrinsic base-collector capacitance of HBTs directly from bias-dependent S-parameter data. IEEE Electron Device Letters. 22(3). 116–118. 5 indexed citations

12.

Huang, Jian‐Jang, M. Hattendorf, M. Feng, et al.. (2001). Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors. IEEE Electron Device Letters. 22(4). 157–159. 23 indexed citations

13.

Huang, Jian‐Jang, M. Hattendorf, Damien Lambert, et al.. (2000). Graded-emitter AlGaN/GaN heterojunction bipolartransistors. Electronics Letters. 36(14). 1239–1241. 19 indexed citations

14.

Kuo, Hao‐Chung, M. Hattendorf, D.B. Scott, et al.. (1999). Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(3). 1185–1189. 5 indexed citations

15.

Raghavan, G., et al.. (1999). Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior. IEEE Transactions on Electron Devices. 46(4). 634–640. 33 indexed citations

16.

Hattendorf, M., et al.. (1998). Effects of alloy ambient on PdGe contacts on n-type GaAs. Applied Physics Letters. 72(26). 3479–3481. 4 indexed citations

17.

Fang, Wei, M. Hattendorf, S. L. Chuang, et al.. (1997). Analysis of temperature sensitivity in semiconductor lasers using gain and spontaneous emission measurements. Applied Physics Letters. 70(7). 796–798. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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