K. Tone

1.8k citations

39 papers · 545 indexed · h-index 14

Impact in

Electrical and Electronic Engineering top 10%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Electromagnetic Compatibility and Noise Suppression
- Advancements in Semiconductor Devices and Circuit Design
- HVDC Systems and Fault Protection
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 35
- Silicon Carbide Semiconductor Technologies 26
- Semiconductor materials and devices 20
- Advancements in Semiconductor Devices and Circuit Design 7
- Multilevel Inverters and Converters 3
- Silicon and Solar Cell Technologies 3
- Electromagnetic Compatibility and Noise Suppression 3
Surfaces, Coatings and Films 4

Co-authors: J.H. Zhao Masamichi Yamada Yuichi Ide M. Weiner Leonid Fursin P. Alexandrov Jian Hui Zhao Yoshifumi Katayama
Journals: Japanese Journal of Applied Physics (5 papers)Electronics Letters (4 papers)IEEE Electron Device Letters (3 papers)Applied Physics Letters (2 papers)Applied Surface Science (1 paper)
Partner nations: United States Japan Netherlands

In The Last Decade

K. Tone

38 papers receiving 491 citations

Peers

Countries citing papers authored by K. Tone

Since Specialization

Citations

This map shows the geographic impact of K. Tone's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Tone with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Tone more than expected).

Fields of papers citing papers by K. Tone

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Tone. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Tone. The network helps show where K. Tone may publish in the future.

Co-authorship network

The 25 scholars most cited alongside K. Tone, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K. Tone Line = papers co-authored together K. Tone links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Clinical significance of immunocytochemical staining for peritoneal lavage cytology in pancreatic cancer Surgery ·Mona Ebrahim Hussien Abd El-Gawad, Katsuhisa Ohgi, Nobuyuki Ohike, K. Tone, Tomoko Norose, Teiichi Sugiura, Ryo Ashida, Mihoko Yamada, Shimpei Otsuka, Katsuhiko Uesaka	2022	4
2	High performance 35nm L/sub GATE/ CMOS transistors featuring NiSi metal gate (FUSI), uniaxial strained silicon channels and 1.2nm gate oxide P. Ranade, T. Ghani, Kelin J. Kuhn, K. Mistry, Sangwoo Pae, L. Shifren, M. Stettler, K. Tone, S. Tyagi, M. Bohr	2006	10
3	6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs Materials science forum ·Jian Hui Zhao, K. Tone, E.G. Shivakumar, Peter N. Alexandrov, Leonid Fursin, M. Weiner	2004	2
4	High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications Materials science forum ·Jian Hui Zhao, E.G. Shivakumar, K. Tone, Peter N. Alexandrov, Leonid Fursin, Wendy Gendron, M. Weiner	2004	2
5	3.6 m cm2, 1726 V 4H-SiC normally-off trenched-and-implanted vertical JFETs and circuit applications IEE Proceedings - Circuits Devices and Systems ·J.H. Zhao, K. Tone, 明美岩崎, P. Alexandrov, Leonid Fursin, M. Weiner	2004	13
6	4H-SiC normally-off vertical junction field-effect transistor with high current density IEEE Electron Device Letters ·K. Tone, J.H. Zhao, Leonid Fursin, P. Alexandrov, M. Weiner	2003	58
7	Demonstration of a high performance 4H-SiC vertical junction field effect transistor without epitaxial regrowth Electronics Letters ·J.H. Zhao, K. Tone, Maksym Kovalov, Mohamed A. Ismail, Leonid Fursin, M. Weiner	2003	1
8	Design of a novel planar normally-off power VJFET in 4H-SiC Solid-State Electronics ·J.H. Zhao, Mingjuan Jiang, K. Tone, Mohamed A. Ismail, Philip M. Rafiy, M. Weiner	2002	16
9	Multistep junction termination extension for SiCpower devices Electronics Letters ·明美岩崎, K. Tone, Leonid Fursin, J.H. Zhao, Harkeerat Kaur, Mohamed A. Ismail, Philip M. Rafiy, M. Weiner	2001	30
10	Theoretical and Experimental Study of 4H-SiC Junction Edge Termination Materials science forum ·Xueqing Li, K. Tone, Pei Pei Li, Mohamed A. Ismail, Leonid Fursin, Jian Hui Zhao	2000	38
11	Fabrication and Characterization of 4H-SiC GTOs and Diodes Materials science forum ·Leonid Fursin, K. Tone, İslam Batur, Marcos Martínez-Borja, Pei Pei Li, Jian Hui Zhao, M. Weiner, Philip M. Rafiy	2000	6
12	A comparative study of C plus Al coimplantation and Al implantation in 4Hand 6H-SiC IEEE Transactions on Electron Devices ·K. Tone, J.H. Zhao	1999	22
13	Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques Materials science forum ·Zhe Chuan Feng, Ian T. Ferguson, R. A. Stall, Fan Yichang, Yating Shi, Muhammad Adil, K. Tone, Jian Hui Zhao, Andrew T. S. Wee, Назгуль Нуржановна Кадримбетова, Fran Adar, Bruno Lenain	1998	1
14	Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation Materials science forum ·K. Tone, Steve Weiner, Jian Hui Zhao	1998	6
15	Carbon and aluminium co-implantation for p -typedoping in 6H-SiC Electronics Letters ·K. Tone, Steve Weiner, J.H. Zhao	1997	4
16	Evaluation of ohmic contacts to p-type 6H-SiC created by C and Al coimplantation IEEE Electron Device Letters ·J.H. Zhao, K. Tone, Steve Weiner, Daniel Jeller, Honghua Du, S. P. Withrow	1997	24
17	Effect of long-term L-threo-3,4-dihydroxyphenylserine administration on α-2-adrenergic receptors in platelet membranes in neurologic disorders Acta Neurologica Scandinavica ·Tamiko Azuma, T. Suzuki, Saburo Sakoda, Anshul Sheoran, Seiichi Tsujino, Michael J. McCourt, S. Kishimoto, H. L. Hadaller, Takashi Matsubara, S. Yoshida, K. Tone	1991	3
18	AlGaAs grating surface-emitting beam deflector utilizing carrier-induced refractive index change Applied Physics Letters ·K. Tone, Karl Max Einhaeup, Ken Yamashita	1990	3
19	Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVD Japanese Journal of Applied Physics ·K. Tone, Takao Nakayama, Alicia Alted Vigil, S. Shamsalddini, Hiroshi Kukimoto	1986	19
20	Dispersion of the Linewidth Enhancement Factor in Semiconductor Injection Lasers Japanese Journal of Applied Physics ·Nagaatsu Ogasawara, Ryoichi Ito, K. Tone, Jonelle G George	1984	20

About K. Tone

K. Tone is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 39 papers that have together received 545 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (26 papers), Semiconductor materials and devices (20 papers), Semiconductor materials and interfaces (8 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), GaN-based semiconductor devices and materials (5 papers), Multilevel Inverters and Converters (3 papers), Silicon and Solar Cell Technologies (3 papers) and Electromagnetic Compatibility and Noise Suppression (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (478 citations), Atomic and Molecular Physics, and Optics (170 citations), Surfaces, Coatings and Films (29 citations), Condensed Matter Physics (45 citations) and Ceramics and Composites (15 citations). K. Tone has collaborated with scholars based in United States, Japan and Netherlands. Frequent co-authors include J.H. Zhao, Masamichi Yamada, Yuichi Ide, M. Weiner, Leonid Fursin, P. Alexandrov, Jian Hui Zhao, Yoshifumi Katayama, Steve Weiner and Xueqing Li. Their work appears in journals such as Japanese Journal of Applied Physics, Electronics Letters, IEEE Electron Device Letters, Applied Physics Letters and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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