M.D. Giles

2.9k total citations
68 papers, 1.8k citations indexed

About

M.D. Giles is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Computational Mechanics. According to data from OpenAlex, M.D. Giles has authored 68 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 61 papers in Electrical and Electronic Engineering, 9 papers in Biomedical Engineering and 8 papers in Computational Mechanics. Recurrent topics in M.D. Giles's work include Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Silicon and Solar Cell Technologies (22 papers). M.D. Giles is often cited by papers focused on Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers) and Silicon and Solar Cell Technologies (22 papers). M.D. Giles collaborates with scholars based in United States, United Kingdom and Austria. M.D. Giles's co-authors include R. Kotlyar, M. Stettler, Philippe Matagne, B. Obradovic, S. Mudanai, Kelin J. Kuhn, Titash Rakshit, Dmitri E. Nikonov, A. Kornfeld and Frederik Ole Heinz and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

M.D. Giles

61 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.D. Giles United States 19 1.5k 425 387 312 181 68 1.8k
Geert Hellings Belgium 22 1.8k 1.2× 242 0.6× 272 0.7× 394 1.3× 64 0.4× 204 2.0k
Jian‐Qiang Lu United States 21 1.7k 1.1× 133 0.3× 310 0.8× 542 1.7× 22 0.1× 57 2.0k
W.N. Carr United States 17 704 0.5× 164 0.4× 326 0.8× 259 0.8× 18 0.1× 70 872
Tsuyoshi Takahashi Japan 22 1.4k 0.9× 158 0.4× 453 1.2× 215 0.7× 20 0.1× 167 1.7k
M. Ieong United States 27 3.4k 2.3× 508 1.2× 557 1.4× 642 2.1× 39 0.2× 72 3.7k
David Howard United States 14 641 0.4× 137 0.3× 149 0.4× 118 0.4× 67 0.4× 51 720
Burn J. Lin Taiwan 19 967 0.6× 70 0.2× 119 0.3× 596 1.9× 138 0.8× 162 1.2k
H. Reisinger Germany 31 4.1k 2.7× 552 1.3× 448 1.2× 163 0.5× 23 0.1× 136 4.3k
Bucknell C. Webb United States 22 1.7k 1.1× 115 0.3× 293 0.8× 289 0.9× 26 0.1× 52 1.9k
T. Ernst France 26 2.5k 1.7× 243 0.6× 452 1.2× 645 2.1× 28 0.2× 179 2.8k

Countries citing papers authored by M.D. Giles

Since Specialization
Citations

This map shows the geographic impact of M.D. Giles's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.D. Giles with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.D. Giles more than expected).

Fields of papers citing papers by M.D. Giles

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.D. Giles. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.D. Giles. The network helps show where M.D. Giles may publish in the future.

Co-authorship network of co-authors of M.D. Giles

This figure shows the co-authorship network connecting the top 25 collaborators of M.D. Giles. A scholar is included among the top collaborators of M.D. Giles based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.D. Giles. M.D. Giles is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kotlyar, R., M.D. Giles, S. Cea, et al.. (2009). Modeling the effects of applied stress and wafer orientation in silicon devices: from long channel mobility physics to short channel performance. Journal of Computational Electronics. 8(2). 110–123. 9 indexed citations
2.
Giles, M.D., Paul Davids, C. Weber, et al.. (2008). Physical Modeling of Layout-Dependent Transistor Performance. ECS Transactions. 13(1). 63–74. 3 indexed citations
3.
Obradovic, B., R. Kotlyar, Frederik Ole Heinz, et al.. (2006). Analysis of graphene nanoribbons as a channel material for field-effect transistors. Applied Physics Letters. 88(14). 283 indexed citations
4.
Matagne, Philippe, L. Shifren, B. Obradovic, et al.. (2006). Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers. IEEE Transactions on Electron Devices. 53(8). 1840–1851. 113 indexed citations
6.
Kotlyar, R., M.D. Giles, Philippe Matagne, et al.. (2005). Inversion mobility and gate leakage in high-k/metal gate MOSFETs. 391–394. 30 indexed citations
7.
Giles, M.D.. (2005). TCAD Challenges in the Nanotechnology Era. 7–12. 1 indexed citations
8.
Duvall, Steven G., M.D. Giles, Rachel D. Harris, et al.. (2005). Developing and Integrating TCAD Applications with the Semiconductor Wafer Representation. 199–204. 2 indexed citations
9.
Giles, M.D.. (2004). Invited Abstract) TCAD ProcesdDeviee Modeling Challenges and Opportunities for the Next Decade. 1 indexed citations
10.
Giles, M.D., et al.. (2004). Growth of lead bromide polycrystalline films. Crystal Research and Technology. 39(10). 906–911. 12 indexed citations
11.
Cea, S., et al.. (2003). Modeling of ultrahighly doped shallow junctions for aggressively scaled CMOS. 46. 875–878. 6 indexed citations
12.
Chandhok, Manish, et al.. (2002). Phenomenological modeling of plasma generation for real-time control of RIE systems. 133. 33–36. 1 indexed citations
13.
Giles, M.D., et al.. (2002). Architecture and implementation of 3D field support in semiconductor wafer representation. 81–84. 1 indexed citations
14.
Giles, M.D.. (1993). Transient phosphorus diffusion from silicon and argon implantation damage. Applied Physics Letters. 62(16). 1940–1942. 28 indexed citations
15.
Giles, M.D.. (1991). Extrinsic transient diffusion in silicon. Applied Physics Letters. 58(21). 2399–2401. 7 indexed citations
16.
Giles, M.D.. (1989). Defect-coupled diffusion at high concentrations. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 8(5). 460–467. 23 indexed citations
17.
Giles, M.D., et al.. (1987). Ultimate resolution and contrast in ion-beam lithography. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(6). 1588–1590. 2 indexed citations
18.
Giles, M.D., Judy L. Hoyt, & J. F. Gibbons. (1986). The Depth Resolution of Dynamic Sims: Experiments and Calculations. MRS Proceedings. 69. 5 indexed citations
19.
Giles, M.D. & J. F. Gibbons. (1983). A multiple pass application of the Boltzmann transport equation for calculating ion implantation profiles at low energies. Nuclear Instruments and Methods in Physics Research. 209-210. 33–36. 25 indexed citations
20.
Giles, M.D., et al.. (1980). Benefits of noise reduction systems in automotive radios. 474–480.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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