G. Glass

2.6k total citations
15 papers, 1.1k citations indexed

About

G. Glass is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, G. Glass has authored 15 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 5 papers in Biomedical Engineering. Recurrent topics in G. Glass's work include Semiconductor materials and devices (11 papers), Nanowire Synthesis and Applications (5 papers) and Semiconductor Quantum Structures and Devices (4 papers). G. Glass is often cited by papers focused on Semiconductor materials and devices (11 papers), Nanowire Synthesis and Applications (5 papers) and Semiconductor Quantum Structures and Devices (4 papers). G. Glass collaborates with scholars based in United States, Canada and United Kingdom. G. Glass's co-authors include J. E. Greene, P. Desjardins, Scott E. Thompson, K. Mistry, M. Bohr, S. Sivakumar, T. Ghani, C. Auth, A. Murthy and B. McIntyre and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

G. Glass

15 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. Glass United States	10	967	376	281	214	43	15	1.1k
A. Steckenborn Germany	12	374 0.4×	331 0.9×	182 0.6×	126 0.6×	29 0.7×	18	545
H. Lafontaine Canada	14	405 0.4×	318 0.8×	84 0.3×	178 0.8×	34 0.8×	55	524
E. Wintersberger Austria	13	442 0.5×	418 1.1×	298 1.1×	279 1.3×	28 0.7×	24	694
C. J. Gibbings United Kingdom	14	453 0.5×	431 1.1×	75 0.3×	215 1.0×	49 1.1×	38	605
S. Yu. Shiryaev Denmark	13	475 0.5×	429 1.1×	115 0.4×	219 1.0×	108 2.5×	41	633
Kenzo Akita Japan	18	876 0.9×	667 1.8×	145 0.5×	152 0.7×	99 2.3×	70	1.0k
H. Heidemeyer Germany	11	399 0.4×	449 1.2×	197 0.7×	255 1.2×	15 0.3×	13	604
S. A. Teys Russia	14	277 0.3×	547 1.5×	123 0.4×	239 1.1×	47 1.1×	62	647
Л. И. Федина Russia	11	299 0.3×	216 0.6×	76 0.3×	214 1.0×	72 1.7×	61	436
Z. Liliental United States	8	411 0.4×	192 0.5×	83 0.3×	124 0.6×	26 0.6×	17	525

Countries citing papers authored by G. Glass

Since Specialization

Citations

This map shows the geographic impact of G. Glass's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Glass with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Glass more than expected).

Fields of papers citing papers by G. Glass

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Glass. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Glass. The network helps show where G. Glass may publish in the future.

Co-authorship network of co-authors of G. Glass

This figure shows the co-authorship network connecting the top 25 collaborators of G. Glass. A scholar is included among the top collaborators of G. Glass based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Glass. G. Glass is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

Ghani, T., M Armstrong, C. Auth, et al.. (2004). A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors. 11.6.1–11.6.3. 378 indexed citations

Thompson, Scott E., M Armstrong, C. Auth, et al.. (2004). A Logic Nanotechnology Featuring Strained-Silicon. IEEE Electron Device Letters. 25(4). 191–193. 389 indexed citations

Glass, G., et al.. (2001). Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation. Applied Physics Letters. 79(20). 3263–3265. 2 indexed citations

Glass, G., et al.. (2001). Ultra-highly doped Si1−xGex(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics. Journal of Applied Physics. 89(1). 194–205. 6 indexed citations

Vailionis, Artūras, et al.. (2000). Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001). Physical Review Letters. 85(17). 3672–3675. 159 indexed citations

Glass, G., Hoe Joon Kim, P. Desjardins, et al.. (2000). Ultrahigh B doping(<~1022cm−3)during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport. Physical review. B, Condensed matter. 61(11). 7628–7644. 33 indexed citations

Glass, G., et al.. (2000). Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics. Journal of Applied Physics. 88(12). 7067–7078. 14 indexed citations

Vailionis, Artūras, G. Glass, P. Desjardins, David G. Cahill, & J. E. Greene. (1999). Electrically Active and Inactive B Lattice Sites in Ultrahighly B Doped Si(001): An X-Ray Near-Edge Absorption Fine-Structure and High-Resolution Diffraction Study. Physical Review Letters. 82(22). 4464–4467. 33 indexed citations

Taylor, N., T. Spila, J. Eades, et al.. (1999). Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions. Journal of Applied Physics. 85(1). 501–511. 9 indexed citations

10.

Soares, Julio A. N. T., et al.. (1999). Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties. Applied Physics Letters. 74(9). 1290–1292. 7 indexed citations

11.

Kim, Hoe Joon, G. Glass, T. Spila, et al.. (1997). Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics. Journal of Applied Physics. 82(5). 2288–2297. 27 indexed citations

12.

Glass, G., Hoe Joon Kim, M. R. Sardela, et al.. (1997). Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy. Surface Science. 392(1-3). L63–L68. 14 indexed citations

13.

Lu, Qi, M. R. Sardela, N. Taylor, et al.. (1997). B incorporation and hole transport in fully strained heteroepitaxial Si1 − xGex grown on Si(0 0 1) by gas-source MBE from Si2H6, Ge2H6, and B2H6. Journal of Crystal Growth. 179(1-2). 97–107. 1 indexed citations

14.

Kim, Hoe Joon, N. Taylor, T. Spila, et al.. (1997). Structure of the Si(011)-(16 × 2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption. Surface Science. 380(2-3). L496–L500. 20 indexed citations

15.

Glass, G., et al.. (1996). Effects of B doping on hydrogen desorption from Si(001) during gas-source molecular-beam epitaxy from Si2H6 and B2H6. Applied Physics Letters. 69(25). 3869–3871. 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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