G. Glass

2.6k citations

15 papers · 1.1k indexed · h-index 10

Electrical and Electronic Engineering top 5%
Atomic and Molecular Physics, and Optics top 10%
Biomedical Engineering top 10%
Materials Chemistry
Computational Mechanics

Co-authors: J. E. Greene P. Desjardins C. Auth M Armstrong M. Bohr K. Mistry S. Sivakumar B. McIntyre
Topics: Semiconductor materials and devices (11 papers)Nanowire Synthesis and Applications (5 papers)Semiconductor Quantum Structures and Devices (4 papers)
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Structural Biology
Journals: Physical Review Letters Physical review. B, Condensed matter Applied Physics Letters
Partner nations: United States Canada United Kingdom

In The Last Decade

G. Glass

15 papers receiving 1.1k citations

Peers

Countries citing papers authored by G. Glass

Since Specialization

Citations

This map shows the geographic impact of G. Glass's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Glass with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Glass more than expected).

Fields of papers citing papers by G. Glass

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Glass. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Glass. The network helps show where G. Glass may publish in the future.

Co-authorship network of co-authors of G. Glass

This figure shows the co-authorship network connecting the top 25 collaborators of G. Glass. A scholar is included among the top collaborators of G. Glass based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Glass. G. Glass is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

#	Work	Indexed citations
1	A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors 2004 ·T. Ghani,M Armstrong,C. Auth,M. Bost,P. Charvát,G. Glass,Thomas Hoffmann,Kevin B. Johnson,C. Kenyon,J. W. Klaus,B. McIntyre,K. Mistry,A. Murthy,J. Sandford,Meredith N. Silberstein,S. Sivakumar,P. Smith,K. Zawadzki,Scott E. Thompson,M. Bohr	378
2	A Logic Nanotechnology Featuring Strained-Silicon 2004 ·IEEE Electron Device Letters ·Scott E. Thompson,M Armstrong,C. Auth,S. Cea,R. Chau,G. Glass,T. Hoffman,J. W. Klaus,Zhenqiang Ma,B. McIntyre,A. Murthy,B. Obradovic,L. Shifren,S. Sivakumar,S. Tyagi,T. Ghani,K. Mistry,M. Bohr,Y.A. El-Mansy	389
3	Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation 2001 ·Applied Physics Letters ·(unknown),G. Glass,Julio A. N. T. Soares,Y. L. Foo,P. Desjardins,J. E. Greene	2
4	Ultra-highly doped Si1−xGex(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics 2001 ·Journal of Applied Physics ·(unknown),G. Glass,P. Desjardins,J. E. Greene	6
5	Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001) 2000 ·Physical Review Letters ·Artūras Vailionis,(unknown),G. Glass,P. Desjardins,David G. Cahill,J. E. Greene	159
6	Ultrahigh B doping(<~1022cm−3)during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport 2000 ·Physical review. B, Condensed matter ·G. Glass,Hoe Joon Kim,P. Desjardins,N. Taylor,T. Spila,(unknown),J. E. Greene	33
7	Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics 2000 ·Journal of Applied Physics ·(unknown),G. Glass,Julio A. N. T. Soares,P. Desjardins,J. E. Greene	14
8	Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties 1999 ·Applied Physics Letters ·Julio A. N. T. Soares,(unknown),G. Glass,P. Desjardins,J. E. Greene	7
9	Electrically Active and Inactive B Lattice Sites in Ultrahighly B Doped Si(001): An X-Ray Near-Edge Absorption Fine-Structure and High-Resolution Diffraction Study 1999 ·Physical Review Letters ·Artūras Vailionis,G. Glass,P. Desjardins,David G. Cahill,J. E. Greene	33
10	Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions 1999 ·Journal of Applied Physics ·N. Taylor,(unknown),T. Spila,J. Eades,G. Glass,P. Desjardins,J. E. Greene	9
11	Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics 1997 ·Journal of Applied Physics ·Hoe Joon Kim,G. Glass,T. Spila,N. Taylor,(unknown),John R. Abelson,J. E. Greene	27
12	Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy 1997 ·Surface Science ·G. Glass,Hoe Joon Kim,M. R. Sardela,Qian Lü,Jan‐Otto Carlsson,John R. Abelson,J. E. Greene	14
13	Structure of the Si(011)-(16 × 2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption 1997 ·Surface Science ·Hoe Joon Kim,N. Taylor,T. Spila,G. Glass,(unknown),J. E. Greene,John R. Abelson	20
14	B incorporation and hole transport in fully strained heteroepitaxial Si1 − xGex grown on Si(0 0 1) by gas-source MBE from Si2H6, Ge2H6, and B2H6 1997 ·Journal of Crystal Growth ·Qi Lu,M. R. Sardela,N. Taylor,G. Glass,T. R. Bramblett,T. Spila,John R. Abelson,J. E. Greene	1
15	Effects of B doping on hydrogen desorption from Si(001) during gas-source molecular-beam epitaxy from Si2H6 and B2H6 1996 ·Applied Physics Letters ·(unknown),G. Glass,(unknown),T. Spila,N. Taylor,John R. Abelson,J. E. Greene	34

About G. Glass

G. Glass is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering, having authored 15 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (11 papers), Nanowire Synthesis and Applications (5 papers) and Semiconductor Quantum Structures and Devices (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (967 citations), Atomic and Molecular Physics, and Optics (376 citations) and Structural Biology (16 citations). G. Glass has collaborated with scholars based in United States, Canada and United Kingdom. Frequent co-authors include J. E. Greene, P. Desjardins, C. Auth, M Armstrong, M. Bohr, K. Mistry, S. Sivakumar, B. McIntyre, A. Murthy and T. Ghani. Their work appears in journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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