David A. Deen

1.1k citations

27 papers · 645 indexed · h-index 17

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 17
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 6
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 15
- Advancements in Semiconductor Devices and Circuit Design 7
Atomic and Molecular Physics, and Optics
- Quantum and electron transport phenomena 3
Materials Chemistry
- ZnO doping and properties 4
- Graphene research and applications 3
Mechanics of Materials
- Metal and Thin Film Mechanics 4

Co-authors: David J. Meyer David F. Storm D. S. Katzer Tom Zimmermann Huili Grace Xing Yu Cao Theodosia Gougousi S.C. Binari
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters (5 papers)Solid-State Electronics (3 papers)IEEE Electron Device Letters (2 papers)
Partner nations: United States Japan

In The Last Decade

David A. Deen

26 papers receiving 616 citations

Peers

Countries citing papers authored by David A. Deen

Since Specialization

Citations

This map shows the geographic impact of David A. Deen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David A. Deen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David A. Deen more than expected).

Fields of papers citing papers by David A. Deen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by David A. Deen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David A. Deen. The network helps show where David A. Deen may publish in the future.

Co-authorship network

The 25 scholars most cited alongside David A. Deen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with David A. Deen Line = papers co-authored together David A. Deen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Scaling of the Nonlocal Spin and Baseline Resistances in Graphene Lateral Spin Valves IEEE Transactions on Electron Devices ·Jiaxi Hu,Cyril Léon,David A. Deen,Qun Su,P. A. Crowell,Steven J. Koester	2019	5
2	Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors Journal of Applied Physics ·David A. Deen,Ross Miller,A. Osinsky,Brian P. Downey,David F. Storm,David J. Meyer,D. S. Katzer,Neeraj Nepal	2016	8
3	Graphene-Based Quantum Capacitance Wireless Vapor Sensors IEEE Sensors Journal ·David A. Deen,Eric J. Olson,Mona A. Ebrish,Steven J. Koester	2014	34
4	Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors Applied Physics Letters ·David A. Deen,A. Osinsky,Ross Miller	2014	3
5	Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates Applied Physics Letters ·David A. Deen,David F. Storm,David J. Meyer,Robert B. Bass,Steven C. Binari,Theodosia Gougousi,K. R. Evans	2014	26
6	Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates Journal of Crystal Growth ·David F. Storm,David A. Deen,D. S. Katzer,David J. Meyer,S.C. Binari,Theodosia Gougousi,T. Paskova,Edward A. Preble,K. R. Evans,David J. Smith	2013	27
7	Multilayer HfO2/TiO2 gate dielectric engineering of graphene field effect transistors Applied Physics Letters ·David A. Deen,James G. Champlain,Steven J. Koester	2013	10
8	Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors Applied Physics Letters ·David A. Deen,David F. Storm,Robert B. Bass,David J. Meyer,D. S. Katzer,S.C. Binari,Claire Saint-Félix,Theodosia Gougousi	2011	43
9	High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman’s method revised Applied Physics Letters ·David A. Deen,James G. Champlain	2011	21
10	HfO₂‐insulated gate N‐polar GaN HEMTs with high breakdown voltage physica status solidi (a) ·David J. Meyer,D. S. Katzer,David A. Deen,David F. Storm,S.C. Binari,Theodosia Gougousi	2011	17
11	N‐polar n⁺ GaN cap development for low ohmic contact resistance to inverted HEMTs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·David J. Meyer,D. S. Katzer,Robert B. Bass,N. Y. Garces,Mario G. Ancona,David A. Deen,David F. Storm,S.C. Binari	2011	20
12	Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures Solid-State Electronics ·David A. Deen,David F. Storm,D. S. Katzer,David J. Meyer,S.C. Binari	2010	34
13	Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures Solid-State Electronics ·David F. Storm,D. S. Katzer,David A. Deen,Robert B. Bass,David J. Meyer,J.A. Roussos,S.C. Binari,T. Paskova,Edward A. Preble,K. R. Evans	2010	19
14	AlN/GaN insulated gate HEMTs with HfO ₂ gate dielectric Electronics Letters ·David A. Deen,S.C. Binari,David F. Storm,D. S. Katzer,J.A. Roussos,Justin C. Hackley,Theodosia Gougousi	2009	18
15	AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance IEEE Electron Device Letters ·Tom Zimmermann,David A. Deen,Yu Cao,John Simon,Patrick Fay,Debdeep Jena,Huili Grace Xing	2008	143
16	Formation of ohmic contacts to ultra‐thin channel AlN/GaN HEMTs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Tom Zimmermann,David A. Deen,Yu Cao,Debdeep Jena,Huili Grace Xing	2008	16
17	Ultrathin MBE-Grown AlN/GaN HEMTs with record high current densities Yu Cao,Tom Zimmermann,David A. Deen,John Simon,Judy A. Bean,Ning Su,Rajan Y. Daftary,Patrick Fay,Huili Grace Xing,B. Zhang	2007	15
18	MBE-Grown Ultra-shallow AlN/GaN HFET Technology ECS Transactions ·Huili Grace Xing,David A. Deen,Yu Cao,Tom Zimmermann,Patrick Fay,Debdeep Jena	2007	6
19	Current focusing in InSb heterostructures Physica E Low-dimensional Systems and Nanostructures ·Miguel Ángel Maldonado Romero,David A. Deen,Sheena Murphy,N. Goel,J. C. Keay,M. B. Santos,K. Suzuki,S. Miyashita,Y. Hirayama	2006	26
20	Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructures Journal of Applied Physics ·Vas. P. Kunets,Indian Industrial Commercial Congress,Yu. I. Mazur,D. Guzun,Gregory J. Salamo,N. Goel,T. D. Mishima,David A. Deen,Sheena Murphy,M. B. Santos	2005	34

About David A. Deen

David A. Deen is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Bioengineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 27 papers that have together received 645 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (17 papers), Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Ga2O3 and related materials (6 papers), Metal and Thin Film Mechanics (4 papers), ZnO doping and properties (4 papers), Graphene research and applications (3 papers) and Quantum and electron transport phenomena (3 papers). The work is most often cited by research in Condensed Matter Physics (502 citations), Electronic, Optical and Magnetic Materials (289 citations), Electrical and Electronic Engineering (454 citations), Atomic and Molecular Physics, and Optics (165 citations) and Materials Chemistry (181 citations). David A. Deen has collaborated with scholars based in United States and Japan. Frequent co-authors include David J. Meyer, David F. Storm, D. S. Katzer, Tom Zimmermann, Huili Grace Xing, Yu Cao, Theodosia Gougousi, S.C. Binari, Robert B. Bass and Patrick Fay. Their work appears in journals such as Applied Physics Letters, Solid-State Electronics, IEEE Electron Device Letters, Journal of Applied Physics and Journal of Crystal Growth.

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