David A. Deen

1.1k total citations
27 papers, 645 citations indexed

About

David A. Deen is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, David A. Deen has authored 27 papers receiving a total of 645 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 18 papers in Condensed Matter Physics and 7 papers in Materials Chemistry. Recurrent topics in David A. Deen's work include GaN-based semiconductor devices and materials (17 papers), Semiconductor materials and devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). David A. Deen is often cited by papers focused on GaN-based semiconductor devices and materials (17 papers), Semiconductor materials and devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). David A. Deen collaborates with scholars based in United States and Japan. David A. Deen's co-authors include David J. Meyer, David F. Storm, D. S. Katzer, Tom Zimmermann, Huili Grace Xing, Yu Cao, Theodosia Gougousi, S.C. Binari, Robert B. Bass and Patrick Fay and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

David A. Deen

26 papers receiving 616 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
David A. Deen United States 17 502 454 289 181 165 27 645
Haibo Yin China 15 483 1.0× 361 0.8× 254 0.9× 181 1.0× 177 1.1× 61 614
Michael L. Schuette United States 12 562 1.1× 492 1.1× 247 0.9× 94 0.5× 175 1.1× 35 641
X. Z. Dang United States 9 732 1.5× 526 1.2× 350 1.2× 203 1.1× 254 1.5× 12 825
K. M. Tracy United States 10 490 1.0× 363 0.8× 322 1.1× 217 1.2× 134 0.8× 11 632
A.P. Zhang United States 8 693 1.4× 549 1.2× 272 0.9× 197 1.1× 253 1.5× 12 791
P. M. Bridger United States 11 453 0.9× 378 0.8× 174 0.6× 165 0.9× 281 1.7× 17 645
Takuma Nanjo Japan 16 790 1.6× 535 1.2× 450 1.6× 213 1.2× 201 1.2× 33 849
Asad J. Mughal United States 10 391 0.8× 269 0.6× 136 0.5× 198 1.1× 176 1.1× 18 523
Seong-Ran Jeon South Korea 12 455 0.9× 224 0.5× 196 0.7× 256 1.4× 197 1.2× 31 567
N. Zainal Malaysia 13 314 0.6× 206 0.5× 190 0.7× 236 1.3× 119 0.7× 73 484

Countries citing papers authored by David A. Deen

Since Specialization
Citations

This map shows the geographic impact of David A. Deen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David A. Deen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David A. Deen more than expected).

Fields of papers citing papers by David A. Deen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by David A. Deen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David A. Deen. The network helps show where David A. Deen may publish in the future.

Co-authorship network of co-authors of David A. Deen

This figure shows the co-authorship network connecting the top 25 collaborators of David A. Deen. A scholar is included among the top collaborators of David A. Deen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with David A. Deen. David A. Deen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hu, Jiaxi, et al.. (2019). Scaling of the Nonlocal Spin and Baseline Resistances in Graphene Lateral Spin Valves. IEEE Transactions on Electron Devices. 66(11). 5003–5010. 5 indexed citations
2.
Deen, David A., Ross Miller, A. Osinsky, et al.. (2016). Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors. Journal of Applied Physics. 120(23). 8 indexed citations
3.
Deen, David A., Eric J. Olson, Mona A. Ebrish, & Steven J. Koester. (2014). Graphene-Based Quantum Capacitance Wireless Vapor Sensors. IEEE Sensors Journal. 14(5). 1459–1466. 34 indexed citations
4.
Deen, David A., A. Osinsky, & Ross Miller. (2014). Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors. Applied Physics Letters. 104(9). 3 indexed citations
5.
Deen, David A., David F. Storm, David J. Meyer, et al.. (2014). Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates. Applied Physics Letters. 105(9). 26 indexed citations
6.
Storm, David F., David A. Deen, D. S. Katzer, et al.. (2013). Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates. Journal of Crystal Growth. 380. 14–17. 27 indexed citations
7.
Deen, David A., James G. Champlain, & Steven J. Koester. (2013). Multilayer HfO2/TiO2 gate dielectric engineering of graphene field effect transistors. Applied Physics Letters. 103(7). 10 indexed citations
8.
Deen, David A., David F. Storm, Robert B. Bass, et al.. (2011). Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors. Applied Physics Letters. 98(2). 43 indexed citations
9.
Deen, David A. & James G. Champlain. (2011). High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman’s method revised. Applied Physics Letters. 99(5). 21 indexed citations
10.
Meyer, David J., D. S. Katzer, David A. Deen, et al.. (2011). HfO2‐insulated gate N‐polar GaN HEMTs with high breakdown voltage. physica status solidi (a). 208(7). 1630–1633. 17 indexed citations
11.
Meyer, David J., D. S. Katzer, Robert B. Bass, et al.. (2011). N‐polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 894–897. 20 indexed citations
12.
Deen, David A., David F. Storm, D. S. Katzer, David J. Meyer, & S.C. Binari. (2010). Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures. Solid-State Electronics. 54(6). 613–615. 34 indexed citations
13.
Storm, David F., D. S. Katzer, David A. Deen, et al.. (2010). Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures. Solid-State Electronics. 54(11). 1470–1473. 19 indexed citations
14.
Deen, David A., S.C. Binari, David F. Storm, et al.. (2009). AlN/GaN insulated gate HEMTs with HfO 2 gate dielectric. Electronics Letters. 45(8). 423–424. 18 indexed citations
15.
Zimmermann, Tom, David A. Deen, Yu Cao, et al.. (2008). AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance. IEEE Electron Device Letters. 29(7). 661–664. 143 indexed citations
16.
Zimmermann, Tom, David A. Deen, Yu Cao, Debdeep Jena, & Huili Grace Xing. (2008). Formation of ohmic contacts to ultra‐thin channel AlN/GaN HEMTs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2030–2032. 16 indexed citations
17.
Cao, Yu, Tom Zimmermann, David A. Deen, et al.. (2007). Ultrathin MBE-Grown AlN/GaN HEMTs with record high current densities. 77. 1–2. 15 indexed citations
18.
Xing, Huili Grace, David A. Deen, Yu Cao, et al.. (2007). MBE-Grown Ultra-shallow AlN/GaN HFET Technology. ECS Transactions. 11(5). 233–237. 6 indexed citations
19.
Deen, David A., Sheena Murphy, N. Goel, et al.. (2006). Current focusing in InSb heterostructures. Physica E Low-dimensional Systems and Nanostructures. 34(1-2). 647–650. 26 indexed citations
20.
Kunets, Vas. P., Yu. I. Mazur, D. Guzun, et al.. (2005). Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructures. Journal of Applied Physics. 98(1). 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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