R. J. Shul

8.5k total citations · 1 hit paper
237 papers, 6.9k citations indexed

About

R. J. Shul is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. J. Shul has authored 237 papers receiving a total of 6.9k indexed citations (citations by other indexed papers that have themselves been cited), including 205 papers in Electrical and Electronic Engineering, 131 papers in Condensed Matter Physics and 53 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. J. Shul's work include Semiconductor materials and devices (150 papers), GaN-based semiconductor devices and materials (130 papers) and Plasma Diagnostics and Applications (61 papers). R. J. Shul is often cited by papers focused on Semiconductor materials and devices (150 papers), GaN-based semiconductor devices and materials (130 papers) and Plasma Diagnostics and Applications (61 papers). R. J. Shul collaborates with scholars based in United States, Germany and South Korea. R. J. Shul's co-authors include S. J. Pearton, F. Ren, J.C. Zolper, C. R. Abernathy, Robert S. Freund, Robert C. Wetzel, J. D. MacKenzie, Jung Han, Albert G. Baca and C. B. Vartuli and has published in prestigious journals such as The Journal of Chemical Physics, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. J. Shul

231 papers receiving 6.7k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

GaN: Processing, defects, and devices

1999 1.5k citations S. J. Pearton, J.C. Zolper et al. profile →

Peers

Countries citing papers authored by R. J. Shul

Since Specialization

Citations

This map shows the geographic impact of R. J. Shul's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. J. Shul with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. J. Shul more than expected).

Fields of papers citing papers by R. J. Shul

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. J. Shul. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. J. Shul. The network helps show where R. J. Shul may publish in the future.

Co-authorship network of co-authors of R. J. Shul

This figure shows the co-authorship network connecting the top 25 collaborators of R. J. Shul. A scholar is included among the top collaborators of R. J. Shul based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. J. Shul. R. J. Shul is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Plasma etching of wide bandgap and ultrawide bandgap semiconductors 2020 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·S. J. Pearton, E Douglas, R. J. Shul, F. Ren	28
2	Design and development of a latching micro optical switch 2009 ·(unknown), (unknown), Thomas P. Swiler, R. J. Shul, (unknown)	0
3	Wide-bandgap electronic devices 2001 ·R. J. Shul	8
4	Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE 2001 ·Solid-State Electronics ·J. W. Johnson, Albert G. Baca, R. D. Briggs, R. J. Shul, J. R. Wendt, C. Monier, F. Ren, S. J. Pearton, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow	29
5	A micromachined, shadow-mask technology for the OMVPE fabrication of integrated optical structures 2000 ·Journal of Electronic Materials ·Gregory M. Peake, (unknown), (unknown), Andrew Sarangan, C. G. Willison, R. J. Shul, S. D. Hersee	5
6	Activation Characteristics of Donor and Acceptor Implants in GaN 1999 ·MRS Proceedings ·X. A. Cao, S. J. Pearton, R. K. Singh, R. G. Wilson, J. A. Sekhar, J.C. Zolper, Jung Han, D. J. Rieger, R. J. Shul, Hanjie Guo, Stephen J. Pennycook, J. M. Zavada	1
7	Inductively coupled plasma damage in GaN Schottky diodes 1999 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·X. A. Cao, (unknown), G. Dang, H. Cho, F. Ren, S. J. Pearton, R. J. Shul, L. Zhang, R. Hickman, J. M. Van Hove	13
8	<title>Concept for zero-alignment micro-optical systems</title> 1999 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown), Michael R. Descour, R. J. Shul, (unknown), Mial E. Warren, Terho Kololuoma, (unknown)	4
9	GaN: Defect and Device Issues 1998 ·OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·S. J. Pearton, F. Ren, R. J. Shul, J.C. Zolper	1
10	Inductively Coupled Plasma Etching of III-V Antimonides in BCl(3)/Ar and Cl(2)/Ar 1998 ·University of North Texas Digital Library (University of North Texas) ·Richard P. Leavitt, L. F. Lester, R. J. Shul, C. G. Willison, (unknown)	4
11	Microfabrication of membrane-based devices by deep-reactive ion etching (DRIE) of silicon 1998 ·University of North Texas Digital Library (University of North Texas) ·Ronald P. Manginell, Gregory C. Frye-Mason, W. K. Schubert, R. J. Shul, C. G. Willison	4
12	High Density Plasma Damage in InGaP/GaAs and AlGaAs/GaAs High Electron Mobility Transistors 1998 ·Journal of The Electrochemical Society ·J. W. Lee, S. J. Pearton, F. Ren, R. F. Kopf, (unknown), R. J. Shul, C. Constantine, D. Johnson	2
13	Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas 1997 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·F. Ren, (unknown), C. R. Abernathy, S. J. Pearton, C. Constantine, C. Barratt, R. J. Shul	8
14	Etching of Ga-based III - V semiconductors in inductively coupled Ar and -based plasma chemistries 1997 ·Plasma Sources Science and Technology ·(unknown), C. R. Abernathy, S. J. Pearton, C. Constantine, R. J. Shul, W. S. Hobson	20
15	Er-Doping of Gan and Related Alloys 1996 ·MRS Proceedings ·S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, Robert N. Schwartz, R. G. Wilson, J. M. Zavada, R. J. Shul	7
16	Ecr Etching of GaP, GaAs, InP, and InGaAs in Cl₂/Ar, Cl₂/N₂, BCl₃/Ar, and BCl₃/N₂ 1996 ·MRS Proceedings ·R. J. Shul, Albert G. Baca, D. J. Rieger, H.Q. Hou, S. J. Pearton, F. Ren	10
17	Etching of sub-0.5 µm W/WSi _x bilayer gates 1996 ·Electronics Letters ·R. J. Shul, M.E. Sherwin, Albert G. Baca, D. J. Rieger	10
18	Trenching observed during sidewall formation inGaAs self-aligned refractory gate FETs 1996 ·Electronics Letters ·Albert G. Baca, A. J. Howard, R. J. Shul, M.E. Sherwin	1
19	Anisotropic electron cyclotron resonance etchingof GaInP/AlGaInP heterostructures 1994 ·Electronics Letters ·R. J. Shul, (unknown), C. Constantine	22
20	Kinetics of Thermal Decomposition of Group-Hi Metal Alkyls on GaAs(100) 1990 ·MRS Proceedings ·V. M. Donnelly, J. A. McCaulley, R. J. Shul	6

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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