R. Birkhahn

1.9k total citations
38 papers, 1.6k citations indexed

About

R. Birkhahn is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, R. Birkhahn has authored 38 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Condensed Matter Physics, 25 papers in Electrical and Electronic Engineering and 12 papers in Materials Chemistry. Recurrent topics in R. Birkhahn's work include GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (19 papers) and Ga2O3 and related materials (11 papers). R. Birkhahn is often cited by papers focused on GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (19 papers) and Ga2O3 and related materials (11 papers). R. Birkhahn collaborates with scholars based in United States, United Kingdom and Germany. R. Birkhahn's co-authors include A. J. Steckl, M. Garter, Jason Heikenfeld, Dong‐Seon Lee, Norbert Müller, James D. Scofield, D. Gotthold, B. Peres, Suzanne E. Mohney and Paul Northrup and has published in prestigious journals such as The Journal of Chemical Physics, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. Birkhahn

37 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Birkhahn United States 18 1.2k 840 779 652 298 38 1.6k
Tosja Zywietz Germany 13 1.1k 0.9× 594 0.7× 419 0.5× 614 0.9× 416 1.4× 17 1.4k
Oliver D. Häberlen Austria 18 1.7k 1.5× 887 1.1× 1.5k 2.0× 872 1.3× 811 2.7× 36 2.8k
J. Roos Switzerland 29 1.6k 1.3× 852 1.0× 522 0.7× 1.1k 1.8× 504 1.7× 107 2.7k
R. T. Holm United States 20 512 0.4× 516 0.6× 659 0.8× 311 0.5× 446 1.5× 68 1.4k
Akane Agui Japan 22 342 0.3× 850 1.0× 403 0.5× 372 0.6× 354 1.2× 93 1.6k
D. Hohlwein Germany 21 1.4k 1.2× 1.3k 1.5× 229 0.3× 1.8k 2.7× 320 1.1× 91 2.8k
F. Lévy Switzerland 23 495 0.4× 958 1.1× 614 0.8× 868 1.3× 541 1.8× 98 1.7k
I. I. Mazin Germany 26 1.6k 1.3× 880 1.0× 210 0.3× 1.2k 1.8× 746 2.5× 60 2.6k
D. Brinkmann Switzerland 25 1.1k 1.0× 602 0.7× 495 0.6× 570 0.9× 520 1.7× 116 2.2k
Yoshikazu Terai Japan 21 550 0.5× 803 1.0× 1.0k 1.3× 948 1.5× 827 2.8× 124 2.0k

Countries citing papers authored by R. Birkhahn

Since Specialization
Citations

This map shows the geographic impact of R. Birkhahn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Birkhahn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Birkhahn more than expected).

Fields of papers citing papers by R. Birkhahn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Birkhahn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Birkhahn. The network helps show where R. Birkhahn may publish in the future.

Co-authorship network of co-authors of R. Birkhahn

This figure shows the co-authorship network connecting the top 25 collaborators of R. Birkhahn. A scholar is included among the top collaborators of R. Birkhahn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Birkhahn. R. Birkhahn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Witkowski, L., H.Q. Tserng, P. Saunier, et al.. (2005). Effects of AlGaN/GaN HEMT structure on RF reliability. Electronics Letters. 41(3). 155–157. 53 indexed citations
2.
Tserng, H.Q., L. Witkowski, P. Saunier, et al.. (2004). Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates. Electronics Letters. 40(24). 1547–1548. 19 indexed citations
3.
Kumar, V., R. Schwindt, A. Kuliev, et al.. (2004). Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates. Electronics Letters. 40(1). 80–81. 9 indexed citations
4.
Boutros, K. S., Michael O’Regan, Petra Rowell, et al.. (2004). High performance GaN HEMTs at 40 GHz with power density of 2.8W/mm. 12.5.1–12.5.2. 16 indexed citations
5.
Kumar, V., A. Kuliev, Özgür Aktaş, et al.. (2003). High performance 0.25 µm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz. Electronics Letters. 39(22). 1609–1611. 3 indexed citations
6.
Luo, B., R. Mehandru, Jihyun Kim, et al.. (2003). High three-terminal breakdown voltage and output power of Sc 2 O 3 passivated AlGaN/GaN high electron mobility transistors. Electronics Letters. 39(10). 809–810. 3 indexed citations
7.
Luo, B., R. Mehandru, Jihyun Kim, et al.. (2003). Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation. Solid-State Electronics. 47(10). 1781–1786. 15 indexed citations
8.
Mohney, Suzanne E., et al.. (2002). Environmental and thermal aging of Au/Ni/p-GaN ohmic contacts annealed in air. Journal of Applied Physics. 91(6). 3711–3716. 38 indexed citations
9.
Citrin, P. H., Paul Northrup, R. Birkhahn, & A. J. Steckl. (2000). Local structure and bonding of Er in GaN: A contrast with Er in Si. Applied Physics Letters. 76(20). 2865–2867. 53 indexed citations
10.
Steckl, A. J., et al.. (2000). Rare Earth Doped Gallium Nitride — Light Emission from Ultraviolet to Infrared. 10 indexed citations
11.
Lee, Dong‐Seon, et al.. (2000). Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu. Applied Physics Letters. 76(12). 1525–1527. 73 indexed citations
12.
13.
Birkhahn, R., Dong‐Seon Lee, A. J. Steckl, et al.. (1999). Optical and Structural Properties of Er3+-Doped GaN Grown by MBE. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 435–440. 1 indexed citations
14.
Heikenfeld, Jason, M. Garter, Dong‐Seon Lee, R. Birkhahn, & A. J. Steckl. (1999). Red light emission by photoluminescence and electroluminescence from Eu-doped GaN. Applied Physics Letters. 75(9). 1189–1191. 242 indexed citations
15.
Birkhahn, R., M. Garter, & A. J. Steckl. (1999). Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates. Applied Physics Letters. 74(15). 2161–2163. 114 indexed citations
16.
Steckl, A. J., M. Garter, Dong‐Seon Lee, Jason Heikenfeld, & R. Birkhahn. (1999). Blue emission from Tm-doped GaN electroluminescent devices. Applied Physics Letters. 75(15). 2184–2186. 138 indexed citations
17.
Garter, M., James D. Scofield, R. Birkhahn, & A. J. Steckl. (1999). Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si. Applied Physics Letters. 74(2). 182–184. 71 indexed citations
18.
Birkhahn, R., et al.. (1994). Interfacial resistance between ceramic superconductor and silver. Applied Superconductivity. 2(1). 67–69. 1 indexed citations
19.
Müller, Norbert & R. Birkhahn. (1968). Investigation of micelle structure by fluorine magnetic resonance. II. Effects of temperature changes, added electrolyte, and counterion size. The Journal of Physical Chemistry. 72(2). 583–588. 44 indexed citations
20.
Müller, Norbert & R. Birkhahn. (1965). 14N–H and 13C–H Coupling Constants in Deuterated Ammonium Ion and Toluene. The Journal of Chemical Physics. 43(12). 4540–4541. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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