A. Adikimenakis

857 total citations
44 papers, 720 citations indexed

About

A. Adikimenakis is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, A. Adikimenakis has authored 44 papers receiving a total of 720 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Condensed Matter Physics, 26 papers in Electronic, Optical and Magnetic Materials and 15 papers in Electrical and Electronic Engineering. Recurrent topics in A. Adikimenakis's work include GaN-based semiconductor devices and materials (41 papers), Ga2O3 and related materials (25 papers) and ZnO doping and properties (13 papers). A. Adikimenakis is often cited by papers focused on GaN-based semiconductor devices and materials (41 papers), Ga2O3 and related materials (25 papers) and ZnO doping and properties (13 papers). A. Adikimenakis collaborates with scholars based in Greece, Germany and Slovakia. A. Adikimenakis's co-authors include A. Georgakilas, E. Iliopoulos, K. Tsagaraki, Emmanouil Dimakis, M. Androulidaki, Г. Константинидис, Ph. Komninou, C. Giesen, M. Heuken and G. Konstantinidis and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

A. Adikimenakis

43 papers receiving 707 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Adikimenakis Greece 17 631 341 277 242 179 44 720
Junxue Ran China 14 576 0.9× 402 1.2× 358 1.3× 367 1.5× 188 1.1× 47 828
Sung Ryong Ryu South Korea 8 401 0.6× 261 0.8× 416 1.5× 211 0.9× 221 1.2× 10 613
J. Teubert Germany 18 417 0.7× 256 0.8× 328 1.2× 277 1.1× 240 1.3× 38 697
David A. Deen United States 17 502 0.8× 289 0.8× 181 0.7× 454 1.9× 60 0.3× 27 645
B. P. Luther United States 12 743 1.2× 323 0.9× 272 1.0× 602 2.5× 77 0.4× 16 930
Taiping Lü China 17 597 0.9× 307 0.9× 453 1.6× 300 1.2× 185 1.0× 42 857
Marta Sobańska Poland 15 423 0.7× 266 0.8× 328 1.2× 218 0.9× 186 1.0× 52 597
J.S. Flynn United States 13 614 1.0× 243 0.7× 214 0.8× 484 2.0× 80 0.4× 27 780
Hongling Xiao China 15 474 0.8× 188 0.6× 175 0.6× 222 0.9× 172 1.0× 44 563
P. M. Bridger United States 11 453 0.7× 174 0.5× 165 0.6× 378 1.6× 131 0.7× 17 645

Countries citing papers authored by A. Adikimenakis

Since Specialization
Citations

This map shows the geographic impact of A. Adikimenakis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Adikimenakis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Adikimenakis more than expected).

Fields of papers citing papers by A. Adikimenakis

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Adikimenakis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Adikimenakis. The network helps show where A. Adikimenakis may publish in the future.

Co-authorship network of co-authors of A. Adikimenakis

This figure shows the co-authorship network connecting the top 25 collaborators of A. Adikimenakis. A scholar is included among the top collaborators of A. Adikimenakis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Adikimenakis. A. Adikimenakis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kostopoulos, A., A. Adikimenakis, K. Tsagaraki, et al.. (2024). Enhanced 2DEG confinement in GaN-based HEMTs: Exploring the role of AlGaN back barriers through Schrödinger - Poisson simulations and experimental validation. Materials Science in Semiconductor Processing. 188. 109213–109213. 1 indexed citations
2.
Arutyunov, K. Yu., А. Ставринидис, Г. Ставринидис, et al.. (2023). The Critical Temperature of Superconducting Aluminum Films. The Physics of Metals and Metallography. 124(1). 53–57. 1 indexed citations
3.
Kuzmı́k, J., A. Adikimenakis, M. Ťapajna, et al.. (2021). InN: Breaking the limits of solid-state electronics. AIP Advances. 11(12). 8 indexed citations
4.
Lymperakis, L., A. Adikimenakis, Christian H. Liebscher, et al.. (2021). Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content. Scientific Reports. 11(1). 20606–20606. 11 indexed citations
5.
Adikimenakis, A., А. Ставринидис, K. Tsagaraki, et al.. (2019). Nanofabrication of normally-off GaN vertical nanowire MESFETs. Nanotechnology. 30(28). 285304–285304. 17 indexed citations
6.
Adikimenakis, A., А. Ставринидис, K. Tsagaraki, et al.. (2019). Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure. Solid-State Electronics. 158. 1–10. 6 indexed citations
7.
Adikimenakis, A., et al.. (2019). Bandgap, electrical and structural properties of thick InN (0001) films grown under optimal conditions. Journal of Physics Conference Series. 1190(1). 12010–12010. 1 indexed citations
8.
Kruse, J., L. Lymperakis, A. Adikimenakis, et al.. (2016). Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy. Journal of Applied Physics. 119(22). 27 indexed citations
9.
Adikimenakis, A., A. Kostopoulos, M. Kayambaki, et al.. (2016). In-situ SiNx/InN structures for InN field-effect transistors. Applied Physics Letters. 108(14). 10 indexed citations
10.
Adikimenakis, A., A. Kostopoulos, M. Kayambaki, et al.. (2016). Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors. Semiconductor Science and Technology. 31(6). 65002–65002. 6 indexed citations
11.
Pécz, B., László S. Tóth, A. Adikimenakis, et al.. (2015). GaN heterostructures with diamond and graphene. Semiconductor Science and Technology. 30(11). 114001–114001. 6 indexed citations
12.
Adikimenakis, A., A. Kostopoulos, M. Kayambaki, et al.. (2014). Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer. Applied Physics Letters. 105(11). 113508–113508. 21 indexed citations
13.
Adikimenakis, A., K. E. Aretouli, E. Iliopoulos, et al.. (2009). High electron mobility transistors based on the AlN/GaN heterojunction. Microelectronic Engineering. 86(4-6). 1071–1073. 30 indexed citations
14.
Adikimenakis, A., et al.. (2009). Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy. Microelectronic Engineering. 86(4-6). 812–815. 10 indexed citations
15.
King, P. D. C., T. D. Veal, A. Adikimenakis, et al.. (2008). Surface electronic properties of undoped InAlN alloys. Applied Physics Letters. 92(17). 14 indexed citations
16.
Iliopoulos, E., A. Adikimenakis, C. Giesen, M. Heuken, & A. Georgakilas. (2008). Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry. Applied Physics Letters. 92(19). 79 indexed citations
17.
Iliopoulos, E., A. Georgakilas, Emmanouil Dimakis, et al.. (2006). InGaN(0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy. physica status solidi (a). 203(1). 102–105. 46 indexed citations
18.
Iliopoulos, E., Matthew Zervos, A. Adikimenakis, K. Tsagaraki, & A. Georgakilas. (2006). Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN. Superlattices and Microstructures. 40(4-6). 313–319. 9 indexed citations
19.
Chaniotakis, Nikos A., et al.. (2006). Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures. Biosensors and Bioelectronics. 22(12). 2796–2801. 23 indexed citations
20.
Dimakis, Emmanouil, Г. Константинидис, K. Tsagaraki, et al.. (2004). The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy. Superlattices and Microstructures. 36(4-6). 497–507. 29 indexed citations

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