J.S. Flynn

955 total citations
27 papers, 780 citations indexed

About

J.S. Flynn is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J.S. Flynn has authored 27 papers receiving a total of 780 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Condensed Matter Physics, 17 papers in Electrical and Electronic Engineering and 12 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J.S. Flynn's work include GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (10 papers) and Ga2O3 and related materials (8 papers). J.S. Flynn is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (10 papers) and Ga2O3 and related materials (8 papers). J.S. Flynn collaborates with scholars based in United States, Germany and Sweden. J.S. Flynn's co-authors include G. R. Brandes, Joan M. Redwing, M. A. Tischler, Wu Lu, D.A.S. Loeber, Neal G. Anderson, R. P. Vaudo, W. C. Mitchel, S. Elhamri and R. S. Newrock and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J.S. Flynn

26 papers receiving 749 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J.S. Flynn United States	13	614	484	283	243	214	27	780
B. P. Luther United States	12	743 1.2×	602 1.2×	233 0.8×	323 1.3×	272 1.3×	16	930
Tom Zimmermann United States	16	689 1.1×	566 1.2×	195 0.7×	399 1.6×	246 1.1×	41	953
C. F. Lo United States	14	366 0.6×	472 1.0×	92 0.3×	185 0.8×	219 1.0×	30	608
J. Teubert Germany	18	417 0.7×	277 0.6×	212 0.7×	256 1.1×	328 1.5×	38	697
U. Karrer Germany	9	402 0.7×	356 0.7×	173 0.6×	186 0.8×	213 1.0×	13	587
R. Neuberger Germany	8	438 0.7×	366 0.8×	104 0.4×	132 0.5×	201 0.9×	11	609
Junji Kotani Japan	18	910 1.5×	844 1.7×	323 1.1×	408 1.7×	269 1.3×	59	1.1k
Junxue Ran China	14	576 0.9×	367 0.8×	208 0.7×	402 1.7×	358 1.7×	47	828
A. Adikimenakis Greece	17	631 1.0×	242 0.5×	165 0.6×	341 1.4×	277 1.3×	44	720
R. Mehandru United States	14	719 1.2×	732 1.5×	116 0.4×	437 1.8×	280 1.3×	37	906

Countries citing papers authored by J.S. Flynn

Since Specialization

Citations

This map shows the geographic impact of J.S. Flynn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.S. Flynn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.S. Flynn more than expected).

Fields of papers citing papers by J.S. Flynn

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.S. Flynn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.S. Flynn. The network helps show where J.S. Flynn may publish in the future.

Co-authorship network of co-authors of J.S. Flynn

This figure shows the co-authorship network connecting the top 25 collaborators of J.S. Flynn. A scholar is included among the top collaborators of J.S. Flynn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.S. Flynn. J.S. Flynn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Flynn, J.S., et al.. (2006). High temperature hydrogen sensors based on AlGaN/GaN heterostructures. 26. 158–161. 2 indexed citations

Lu, Wu, et al.. (2005). Pt - Al Ga N ∕ Ga N Schottky diodes operated at 800°C for hydrogen sensing. Applied Physics Letters. 87(13). 57 indexed citations

Bernát, J., R. Pierobon, M. Marso, et al.. (2005). Low current dispersion and low bias‐stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2676–2679. 2 indexed citations

Chu, K., P.C. Chao, K. B. Nichols, et al.. (2004). 9.4-W/mm Power Density AlGaN–GaN HEMTs on Free-Standing GaN Substrates. IEEE Electron Device Letters. 25(9). 596–598. 71 indexed citations

Bernát, J., Andrew J. Fox, M. Marso, et al.. (2004). Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs. Electronics Letters. 40(1). 78–80. 16 indexed citations

Lee, J., Hyun‐Su Kim, Michael L. Schuette, et al.. (2004). Self-aligned AlGaN/GaN high electron mobility transistors. Electronics Letters. 40(19). 1227–1228. 12 indexed citations

Lin, Zhaojun, Wu Lu, Jaesun Lee, et al.. (2003). Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions. Applied Physics Letters. 82(24). 4364–4366. 73 indexed citations

Lin, Zhaojun, et al.. (2003). Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer. Electronics Letters. 39(19). 1412–1414. 12 indexed citations

Kumar, V., et al.. (2003). Characterisation of iridium Schottky contacts on n -Al _x Ga _{1− x} N. Electronics Letters. 39(9). 747–748. 26 indexed citations

10.

Flynn, J.S., et al.. (2003). Delta doped AlGaN and AlGaN/GaN HEMTs: Pathway to improved performance?. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2327–2330. 6 indexed citations

11.

Lee, Jaesun, Dongmin Liu, Zhaojun Lin, et al.. (2003). Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate. Solid-State Electronics. 47(11). 2081–2084. 4 indexed citations

12.

Xu, Xueping, R. P. Vaudo, J.S. Flynn, & G. R. Brandes. (2002). Acid etching for accurate determination of dislocation density in GaN. Journal of Electronic Materials. 31(5). 402–405. 31 indexed citations

13.

Vaudo, R. P., et al.. (2002). GaN Boule Growth: A Pathway to GaN Wafers with Improved Material Quality. physica status solidi (a). 194(2). 494–497. 30 indexed citations

14.

Anderson, Neal G., D.A.S. Loeber, Joan M. Redwing, M. A. Tischler, & J.S. Flynn. (1999). Comment on “Lasing Emission from an In_0.1Ga_0.9N Vertical Cavity Surface Emitting Laser”. Japanese Journal of Applied Physics. 38(8R). 4794–4794. 2 indexed citations

15.

Stocker, D. A., E. F. Schubert, K. S. Boutros, et al.. (1998). Optically pumped InGaN/GaN double heterostructurelasers with cleaved facets. Electronics Letters. 34(4). 373–375. 9 indexed citations

16.

Mitchel, W. C., S. Elhamri, R. S. Newrock, et al.. (1998). Transport coefficients of AlGaN/GaN heterostructures. Journal of Electronic Materials. 27(4). 210–214. 3 indexed citations

17.

Stocker, D. A., E. Fred Schubert, W. Grieshaber, et al.. (1997). Fabrication and Optical Pumping of Laser Cavities Made by Cleaving and Wet Chemical Etching. MRS Proceedings. 482. 1 indexed citations

18.

Loeber, D.A.S., Neal G. Anderson, Joan M. Redwing, et al.. (1996). Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures. MRS Proceedings. 449. 1 indexed citations

19.

Redwing, Joan M., D.A.S. Loeber, Neal G. Anderson, M. A. Tischler, & J.S. Flynn. (1996). An optically pumped GaN–AlGaN vertical cavity surface emitting laser. Applied Physics Letters. 69(1). 1–3. 152 indexed citations

20.

Redwing, Joan M., J.S. Flynn, M. A. Tischler, W. C. Mitchel, & A. Saxler. (1995). MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures. MRS Proceedings. 395. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact