C. Monier

1.2k total citations
71 papers, 986 citations indexed

About

C. Monier is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, C. Monier has authored 71 papers receiving a total of 986 indexed citations (citations by other indexed papers that have themselves been cited), including 62 papers in Electrical and Electronic Engineering, 44 papers in Atomic and Molecular Physics, and Optics and 19 papers in Condensed Matter Physics. Recurrent topics in C. Monier's work include Semiconductor Quantum Structures and Devices (43 papers), Radio Frequency Integrated Circuit Design (26 papers) and GaN-based semiconductor devices and materials (19 papers). C. Monier is often cited by papers focused on Semiconductor Quantum Structures and Devices (43 papers), Radio Frequency Integrated Circuit Design (26 papers) and GaN-based semiconductor devices and materials (19 papers). C. Monier collaborates with scholars based in United States, France and Germany. C. Monier's co-authors include Albert G. Baca, M. F. Vilela, F. Ren, S. J. Pearton, A. Freundlich, D. Scott, A. Gutierrez-Aitken, Jung Han, V. Radisic and J. W. Johnson and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C. Monier

66 papers receiving 951 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Monier United States 18 781 504 427 202 191 71 986
M. Antcliffe United States 16 707 0.9× 241 0.5× 565 1.3× 199 1.0× 255 1.3× 27 884
Yasuo Ohno Japan 17 832 1.1× 262 0.5× 706 1.7× 240 1.2× 179 0.9× 90 1.0k
Takehiko Tawara Japan 21 977 1.3× 702 1.4× 251 0.6× 204 1.0× 414 2.2× 104 1.4k
Ioulia Smorchkova United States 16 610 0.8× 206 0.4× 586 1.4× 117 0.6× 92 0.5× 31 724
K. Joshin Japan 24 1.6k 2.1× 503 1.0× 1.0k 2.3× 305 1.5× 197 1.0× 94 1.8k
A. Ketterson United States 23 1.3k 1.7× 843 1.7× 605 1.4× 241 1.2× 189 1.0× 77 1.5k
Kozo Makiyama Japan 21 1.2k 1.5× 370 0.7× 722 1.7× 236 1.2× 143 0.7× 96 1.4k
Andreas R. Alt Switzerland 16 683 0.9× 261 0.5× 680 1.6× 262 1.3× 85 0.4× 29 834
K. Hikosaka Japan 21 1.3k 1.6× 891 1.8× 337 0.8× 132 0.7× 112 0.6× 67 1.4k
A.F.M. Anwar United States 17 763 1.0× 502 1.0× 422 1.0× 116 0.6× 129 0.7× 83 955

Countries citing papers authored by C. Monier

Since Specialization
Citations

This map shows the geographic impact of C. Monier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Monier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Monier more than expected).

Fields of papers citing papers by C. Monier

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Monier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Monier. The network helps show where C. Monier may publish in the future.

Co-authorship network of co-authors of C. Monier

This figure shows the co-authorship network connecting the top 25 collaborators of C. Monier. A scholar is included among the top collaborators of C. Monier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Monier. C. Monier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gutierrez-Aitken, A., D. Scott, Ken Sato, et al.. (2014). Diverse Accessible Heterogeneous Integration (DAHI) at Northrop Grumman Aerospace Systems (NGAS). 1–4. 13 indexed citations
2.
Radisic, V., D. Scott, & C. Monier. (2014). 50 mW 220 GHz InP HBT power amplifier MMIC. 1–3. 10 indexed citations
3.
Radisic, V., D. Scott, A. Cavus, & C. Monier. (2014). 220-GHz High-Efficiency InP HBT Power Amplifiers. IEEE Transactions on Microwave Theory and Techniques. 62(12). 3001–3005. 24 indexed citations
4.
Monier, C., D. Scott, E. Kaneshiro, et al.. (2010). A 0.25 $\mu$m InP DHBT 200 GHz+ Static Frequency Divider. IEEE Journal of Solid-State Circuits. 45(10). 1992–2002. 18 indexed citations
5.
Monier, C., et al.. (2008). An Ultra-Wideband 7-Bit 5-Gsps ADC Implemented in Submicron InP HBT Technology. IEEE Journal of Solid-State Circuits. 43(10). 2187–2193. 27 indexed citations
6.
Scott, D., D. Sawdai, V. Radisic, et al.. (2008). InP double heterojunction bipolar transistor technology for 311 GHz oscillator and 255 GHz amplifier. 1–4. 2 indexed citations
7.
Cavus, A., et al.. (2006). Development of 6.00Å graded metamorphic buffer layers and high performance In0.86Al0.14As∕In0.86Ga0.14As heterojunction bipolar transistor devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(3). 1492–1495. 3 indexed citations
8.
Harff, N.E., Paul W. Marshall, B. Brar, et al.. (2006). Proton Tolerance of InAs Based HEMT and DHBT Devices. 66–71.
9.
Monier, C., et al.. (2005). High performance low power 6.0 A HBT devices and circuits. 267–268. 1 indexed citations
10.
Sawdai, D., C. Monier, A. Cavus, et al.. (2003). DC and RF performance of InAs-based bipolar transistors at very low bias. 38. 281–286. 2 indexed citations
12.
Dang, G., F. Ren, Jung Han, et al.. (2002). GaN pnp bipolar junction transistors operated to 250 °C. Solid-State Electronics. 46(6). 933–936. 6 indexed citations
13.
Pearton, S. J., F. Ren, A.P. Zhang, et al.. (2001). GaN electronics for high power, high temperature applications. Materials Science and Engineering B. 82(1-3). 227–231. 92 indexed citations
14.
Monier, C., et al.. (2001). Pnp InGaAsN-based HBT with graded basedoping. Electronics Letters. 37(3). 198–199. 14 indexed citations
15.
Monier, C., F. Ren, Jung Han, et al.. (2001). Simulation of npn and pnp AlGaN/GaN heterojunction bipolar transistors performances: limiting factors and optimum design. IEEE Transactions on Electron Devices. 48(3). 427–432. 10 indexed citations
16.
Baca, Albert G., H.Q. Hou, C. Monier, et al.. (2001). Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor. IEEE Electron Device Letters. 22(3). 113–115. 12 indexed citations
17.
Johnson, J. W., Albert G. Baca, R. D. Briggs, et al.. (2001). Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE. Solid-State Electronics. 45(12). 1979–1985. 29 indexed citations
18.
Freundlich, A., et al.. (2000). Development of GaAs space solar cells by high growth rate MOMBE/CBE. Journal of Crystal Growth. 209(2-3). 481–485. 19 indexed citations
19.
Disseix, P., P. Ballet, C. Monier, J. Leymarie, & A. Vasson. (1999). Optical properties of (In,Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates. Microelectronics Journal. 30(7). 689–693. 1 indexed citations
20.
Massies, J., C. Deparis, N. Grandjean, et al.. (1994). Monolayer thickness control of InxGa1−xAs/GaAs quantum wells grown by metalorganic molecular beam epitaxy. Applied Physics Letters. 64(12). 1523–1525. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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