R. Gassilloud

975 total citations
38 papers, 660 citations indexed

About

R. Gassilloud is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, R. Gassilloud has authored 38 papers receiving a total of 660 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 12 papers in Mechanics of Materials. Recurrent topics in R. Gassilloud's work include Semiconductor materials and devices (20 papers), Metal and Thin Film Mechanics (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). R. Gassilloud is often cited by papers focused on Semiconductor materials and devices (20 papers), Metal and Thin Film Mechanics (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). R. Gassilloud collaborates with scholars based in France, Switzerland and Japan. R. Gassilloud's co-authors include C. Vallée, Johann Michler, Christophe Ballif, Ph. Gasser, Kilian Wasmer, Cédric Pouvreau, G. Molas, F. Martín, N. Possémé and Joy Tharian and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and Electrochimica Acta.

In The Last Decade

R. Gassilloud

36 papers receiving 633 citations

Peers

R. Gassilloud

EEE

AMPO

Jeff Tsung‐Hui Tsai Taiwan

Yanfeng Wang China

J. Elders Netherlands

I. Dói Brazil

Won Mok Kim South Korea

Susumu Horita Japan

Claudia Menozzi Italy

Zhangcheng Liu China

Tzu-Hsuan Chang United States

Moshe Judelewicz Switzerland

Jeff Tsung‐Hui Tsai Taiwan

R. Gassilloud

249 ×0.6

EEE

352 ×1.1

198 ×0.8

99 ×0.6

98 ×0.9

AMPO

Citations per year, relative to R. Gassilloud R. Gassilloud (= 1×) peers Jeff Tsung‐Hui Tsai

Countries citing papers authored by R. Gassilloud

Since Specialization

Citations

This map shows the geographic impact of R. Gassilloud's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Gassilloud with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Gassilloud more than expected).

Fields of papers citing papers by R. Gassilloud

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Gassilloud. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Gassilloud. The network helps show where R. Gassilloud may publish in the future.

Co-authorship network of co-authors of R. Gassilloud

This figure shows the co-authorship network connecting the top 25 collaborators of R. Gassilloud. A scholar is included among the top collaborators of R. Gassilloud based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Gassilloud. R. Gassilloud is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Gassilloud, R., F. Mercier, A. Dussaigne, et al.. (2025). Thermochemical treatment of sputtered-AlN/2D MoS₂ seed layers: a new elaboration process of highly c-axis AlN films. Journal of Physics Materials. 8(2). 25014–25014.

Reig, Bruno, Paul Brunet, Nicolas Gauthier, et al.. (2024). Development and optimization of large-scale integration of 2D material in memristors. 2D Materials. 11(4). 45002–45002. 3 indexed citations

Bernard, M., Stéphane Cadot, R. Gassilloud, et al.. (2024). MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 42(5). 1 indexed citations

Hyot, Bérangère, A. Dussaigne, R. Gassilloud, et al.. (2024). Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS₂ Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters. ACS Applied Nano Materials. 7(11). 13727–13735. 3 indexed citations

Gassilloud, R., F. Mercier, Arnaud Mantoux, et al.. (2023). Chemical conversion of MoS2 thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(5). 1 indexed citations

Bonvalot, M., C. Vallée, C. Mannequin, et al.. (2021). Area selective deposition using alternate deposition and etch super-cycle strategies. Dalton Transactions. 51(2). 442–450. 14 indexed citations

Vallée, C., M. Bonvalot, Sylvain David, et al.. (2020). Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(3). 44 indexed citations

Vallée, C., et al.. (2019). Topographically selective deposition. Applied Physics Letters. 114(4). 14 indexed citations

Martínez, E., J. M. Ablett, M. Veillerot, et al.. (2018). Chemistry of resistivity changes in TiTe/Al2O3 conductive-bridge memories. Scientific Reports. 8(1). 17919–17919. 8 indexed citations

10.

Rafhay, Quentin, X. Garros, M. Cassé, et al.. (2017). Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices. HAL (Le Centre pour la Communication Scientifique Directe). 144–147. 1 indexed citations

11.

Gassilloud, R., et al.. (2016). Investigation of TiN thin film oxidation depending on the substrate temperature at vacuum break. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 34(5). 21 indexed citations

12.

Pelissier, B., D. Jalabert, F. Pierre, et al.. (2016). Depth profiling investigation by pARXPS and MEIS of advanced transistor technology gate stack. Microelectronic Engineering. 169. 24–28. 8 indexed citations

13.

Gassilloud, R., et al.. (2014). Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C–V. Applied Surface Science. 303. 388–392. 32 indexed citations

14.

Gassilloud, R., C. Leroux, P. Chevalier, et al.. (2013). Investigation of Mg Diffusion in Ta(N) Based Electrodes on HfO₂ for Sub-32nm CMOS Gate-Last Transistors. ECS Transactions. 50(4). 177–183. 2 indexed citations

15.

Gassilloud, R., Timo Asikainen, Jan Willem Maes, et al.. (2012). Evaluation of plasma parameters on PEALD deposited TaCN. Microelectronic Engineering. 107. 156–160. 12 indexed citations

16.

Wasmer, Kilian, R. Gassilloud, Johann Michler, & Christophe Ballif. (2011). Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP. Journal of materials research/Pratt's guide to venture capital sources. 27(1). 320–329. 26 indexed citations

17.

Delcroix, P., S. Blonkowski, M. Kogelschatz, et al.. (2011). SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum. Microelectronic Engineering. 88(7). 1376–1379. 8 indexed citations

18.

Wasmer, Kilian, et al.. (2007). Plastic deformation modes of gallium arsenide in nanoindentation and nanoscratching. Applied Physics Letters. 90(3). 43 indexed citations

19.

Gassilloud, R., Patrik Schmuki, & Johann Michler. (2007). Electrochemical trench etching of silicon triggered via mechanical nanocontacts. Electrochimica Acta. 53(2). 758–762. 1 indexed citations

20.

Ballif, Christophe, Kilian Wasmer, R. Gassilloud, et al.. (2004). Aspects of cleavage fracture of brittle semiconductors from the nanometer to the centimeter scale. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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