Raphaël Boichot
- Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials 13
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- ZnO doping and properties 6
- Diamond and Carbon-based Materials Research 4
- Mechanics of Materials top 10%
- Metal and Thin Film Mechanics 17
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- Heat Transfer and Optimization 3
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- Semiconductor materials and devices 13
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- Ga2O3 and related materials 5
- Copper Interconnects and Reliability 4
- Journals
- Surface and Coatings Technology (5 papers)Thin Solid Films (3 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)
- Partner nations
- FranceUnited StatesNew Zealand
In The Last Decade
Raphaël Boichot
45 papers receiving 735 citations
Peers
Comparison fields: 5 of 68
- Condensed Matter Physics 163
- Materials Chemistry 326
- Mechanics of Materials 162
- Biomedical Engineering 211
- Mechanical Engineering 161
Countries citing papers authored by Raphaël Boichot
This map shows the geographic impact of Raphaël Boichot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Raphaël Boichot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Raphaël Boichot more than expected).
Fields of papers citing papers by Raphaël Boichot
This network shows the impact of papers produced by Raphaël Boichot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Raphaël Boichot. The network helps show where Raphaël Boichot may publish in the future.
Co-authorship network
The 25 scholars most cited alongside Raphaël Boichot, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2023 | 1 | |
| 2 | 2023 | 4 | |
| 3 | 2019 | 2 | |
| 4 | 2019 | 27 | |
| 5 | 2019 | 56 | |
| 6 | 2018 | 49 | |
| 7 | 2017 | 5 | |
| 8 | 2017 | 7 | |
| 9 | 2016 | 11 | |
| 10 | 2016 | 38 | |
| 11 | 2016 | 31 | |
| 12 | 2015 | 4 | |
| 13 | 2013 | 16 | |
| 14 | 2012 | 8 | |
| 15 | 2012 | 9 | |
| 16 | 2011 | 2 | |
| 17 | 2010 | 26 | |
| 18 | 2008 | 38 | |
| 19 | 2008 | 8 | |
| 20 | 2008 | 1 |
About Raphaël Boichot
Raphaël Boichot is a scholar working on Condensed Matter Physics, Mechanics of Materials and Electronic, Optical and Magnetic Materials, having authored 45 papers that have together received 759 indexed citations. Recurring topics across this work include Metal and Thin Film Mechanics (17 papers), Semiconductor materials and devices (13 papers), GaN-based semiconductor devices and materials (13 papers), ZnO doping and properties (6 papers), Ga2O3 and related materials (5 papers), Diamond and Carbon-based Materials Research (4 papers), Copper Interconnects and Reliability (4 papers) and Heat Transfer and Optimization (3 papers). The work is most often cited by research in Condensed Matter Physics (163 citations), Materials Chemistry (326 citations) and Mechanics of Materials (162 citations). Raphaël Boichot has collaborated with scholars based in France, United States and New Zealand. Frequent co-authors include Lingaï Luo, E. Blanquet, M. Pons, Yilin Fan, Jun Yue, Guangwen Chen, Quan Yuan, Yves Gonthier, F. Mercier and S. Lay. Their work appears in journals such as Surface and Coatings Technology, Thin Solid Films, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Crystal Growth & Design and Chemical Vapor Deposition.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.