Sylvain David

783 total citations
42 papers, 633 citations indexed

About

Sylvain David is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Sylvain David has authored 42 papers receiving a total of 633 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 15 papers in Biomedical Engineering. Recurrent topics in Sylvain David's work include Semiconductor materials and devices (19 papers), Photonic and Optical Devices (13 papers) and Nanowire Synthesis and Applications (10 papers). Sylvain David is often cited by papers focused on Semiconductor materials and devices (19 papers), Photonic and Optical Devices (13 papers) and Nanowire Synthesis and Applications (10 papers). Sylvain David collaborates with scholars based in France, United States and Japan. Sylvain David's co-authors include F. Bassani, T. Baron, Etienne Perret, M. Martin, N. Zerounian, F. Aniel, E. Sánchez, Y. Bogumilowicz, Xinyu Bao and J. Moeyaert and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Sylvain David

40 papers receiving 612 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Sylvain David France 15 569 284 155 152 44 42 633
V. Loup France 15 752 1.3× 228 0.8× 191 1.2× 213 1.4× 41 0.9× 57 812
Takuji Takahashi Japan 16 534 0.9× 597 2.1× 246 1.6× 212 1.4× 42 1.0× 94 840
Masaru Shimada Japan 14 420 0.7× 174 0.6× 56 0.4× 153 1.0× 61 1.4× 48 531
E. Wintersberger Austria 13 442 0.8× 418 1.5× 298 1.9× 279 1.8× 25 0.6× 24 694
Kunal Mukherjee United States 17 795 1.4× 611 2.2× 111 0.7× 291 1.9× 39 0.9× 59 1.0k
F. Briones Spain 13 514 0.9× 396 1.4× 165 1.1× 210 1.4× 17 0.4× 38 645
Mitsuhisa Ikeda Japan 13 554 1.0× 250 0.9× 158 1.0× 406 2.7× 53 1.2× 110 679
A.H. Kean United Kingdom 16 385 0.7× 386 1.4× 66 0.4× 171 1.1× 42 1.0× 41 586
R. N. Kini India 12 299 0.5× 349 1.2× 114 0.7× 201 1.3× 37 0.8× 45 587
H. Welsch Germany 13 535 0.9× 565 2.0× 242 1.6× 228 1.5× 31 0.7× 22 818

Countries citing papers authored by Sylvain David

Since Specialization
Citations

This map shows the geographic impact of Sylvain David's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sylvain David with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sylvain David more than expected).

Fields of papers citing papers by Sylvain David

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sylvain David. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sylvain David. The network helps show where Sylvain David may publish in the future.

Co-authorship network of co-authors of Sylvain David

This figure shows the co-authorship network connecting the top 25 collaborators of Sylvain David. A scholar is included among the top collaborators of Sylvain David based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sylvain David. Sylvain David is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bogumilowicz, Y., J. M. Hartmann, M. Martin, et al.. (2025). Heteroepitaxy of GaAs on Ge buffered silicon substrates: Nucleation and crystalline defects. Journal of Crystal Growth. 667. 128235–128235. 1 indexed citations
2.
Pargon, E., Guillaume Gay, Camille Petit‐Etienne, et al.. (2021). Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls. Micro and Nano Engineering. 11. 100083–100083. 6 indexed citations
3.
Eustache, Étienne, J. Aubin, Jean‐Michel Hartmann, et al.. (2021). Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors. Semiconductor Science and Technology. 36(6). 65018–65018. 5 indexed citations
4.
Vogel, Tobias, Nico Kaiser, Stefan Petzold, et al.. (2021). Defect-Induced Phase Transition in Hafnium Oxide Thin Films: Comparing Heavy Ion Irradiation and Oxygen-Engineering Effects. IEEE Transactions on Nuclear Science. 68(8). 1542–1547. 17 indexed citations
5.
David, Sylvain, et al.. (2021). Fictions du numérique. Représentations d’Internet et des réseaux sociaux dans le roman contemporain. SHILAP Revista de lepidopterología. 5(2).
6.
Vallée, C., M. Bonvalot, Sylvain David, et al.. (2020). Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(3). 44 indexed citations
7.
Pargon, E., et al.. (2019). New route for selective etching in remote plasma source: Application to the fabrication of horizontal stacked Si nanowires for gate all around devices. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 37(4). 14 indexed citations
8.
Fournel, Frank, L. Sanchez, Nicolas Vaissière, et al.. (2019). Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate. Nanotechnology. 31(13). 135205–135205. 3 indexed citations
9.
Aubin, J., Jean‐Michel Hartmann, G. Ghibaudo, et al.. (2019). Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers. Applied Physics Letters. 115(17). 6 indexed citations
10.
Salem, B., Guillaume Gay, M. Martin, et al.. (2017). Sub-10 nm plasma nanopatterning of InGaAs with nearly vertical and smooth sidewalls for advanced n-fin field effect transistors on silicon. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 35(2). 5 indexed citations
11.
Martin, M., Damien Caliste, Reynald Alcotte, et al.. (2016). Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001). Applied Physics Letters. 109(25). 39 indexed citations
12.
Bassani, F., et al.. (2016). SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 34(3). 1 indexed citations
13.
14.
Widiez, J., T. Baron, F. Mazen, et al.. (2015). First Demonstration of 300mm InGaAs-On-Insulator Substrates Fabricated using the Smart CutTM Technology. 1 indexed citations
15.
Baron, T., M. Martin, J. Moeyaert, et al.. (2014). Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices. Applied Physics Letters. 104(26). 39 indexed citations
16.
Pain, L., Takahiro Nakayama, Akira Miyake, et al.. (2014). Investigation of the resist outgassing and hydrocarbonaceous contamination induced in multi-electron-beam lithography tools. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9049. 90492Q–90492Q. 4 indexed citations
17.
David, Sylvain, et al.. (2014). Carbonaceous contamination growth induced by resist outgassing under e-beam exposure. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(6). 4 indexed citations
18.
David, Sylvain. (2011). Une chic aventure électrique : la p(r)ose punk française. Études françaises. 47(1). 93–111. 1 indexed citations
19.
Kersauson, M. de, M. El Kurdi, Sylvain David, et al.. (2011). Optical gain in single tensile-strained germanium photonic wire. Optics Express. 19(19). 17925–17925. 71 indexed citations
20.
Perret, Etienne, N. Zerounian, Sylvain David, & F. Aniel. (2008). Complex permittivity characterization of benzocyclobutene for terahertz applications. Microelectronic Engineering. 85(11). 2276–2281. 67 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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