M. Kogelschatz

436 total citations
23 papers, 347 citations indexed

About

M. Kogelschatz is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, M. Kogelschatz has authored 23 papers receiving a total of 347 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 3 papers in Mechanics of Materials. Recurrent topics in M. Kogelschatz's work include Semiconductor materials and devices (15 papers), Plasma Diagnostics and Applications (7 papers) and Block Copolymer Self-Assembly (6 papers). M. Kogelschatz is often cited by papers focused on Semiconductor materials and devices (15 papers), Plasma Diagnostics and Applications (7 papers) and Block Copolymer Self-Assembly (6 papers). M. Kogelschatz collaborates with scholars based in France, Switzerland and Indonesia. M. Kogelschatz's co-authors include Nader Sadeghi, N. Sadeghi, T. Baron, G. Cunge, Karim Aissou, O. Joubert, Gilles Cunge, S. Blonkowski, P. Gentile and Masahito Mori and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

M. Kogelschatz

23 papers receiving 341 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Kogelschatz France 11 272 117 94 52 47 23 347
D. Rapakoulias Greece 12 320 1.2× 257 2.2× 58 0.6× 21 0.4× 45 1.0× 36 404
Naoki Wada Japan 11 168 0.6× 102 0.9× 10 0.1× 55 1.1× 91 1.9× 44 301
E. Bedel‐Pereira France 12 371 1.4× 108 0.9× 27 0.3× 53 1.0× 153 3.3× 42 477
Erick Fuoco United States 10 125 0.5× 162 1.4× 62 0.7× 52 1.0× 27 0.6× 10 363
Shanzhong Wang Singapore 8 181 0.7× 357 3.1× 15 0.2× 76 1.5× 76 1.6× 11 422
Norikuni Yabumoto Japan 12 341 1.3× 147 1.3× 26 0.3× 74 1.4× 76 1.6× 31 423
C. Mukherjee India 12 202 0.7× 227 1.9× 41 0.4× 90 1.7× 43 0.9× 33 378
Tania E. Sandoval Chile 10 287 1.1× 176 1.5× 18 0.2× 36 0.7× 31 0.7× 23 338
Marco Capelli Australia 9 47 0.2× 324 2.8× 67 0.7× 92 1.8× 106 2.3× 16 375
M. R. Johnson United States 12 206 0.8× 107 0.9× 22 0.2× 19 0.4× 138 2.9× 17 347

Countries citing papers authored by M. Kogelschatz

Since Specialization
Citations

This map shows the geographic impact of M. Kogelschatz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Kogelschatz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Kogelschatz more than expected).

Fields of papers citing papers by M. Kogelschatz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Kogelschatz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Kogelschatz. The network helps show where M. Kogelschatz may publish in the future.

Co-authorship network of co-authors of M. Kogelschatz

This figure shows the co-authorship network connecting the top 25 collaborators of M. Kogelschatz. A scholar is included among the top collaborators of M. Kogelschatz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Kogelschatz. M. Kogelschatz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Iséni, Sylvain, M. Kogelschatz, Gilles Cunge, et al.. (2025). Cryogenic cyclical etching of Si using CF4 plasma passivation steps: The role of CF radicals. Applied Physics Letters. 126(3). 4 indexed citations
2.
Fleury, Guillaume, Brian Yuliarto, M. Kogelschatz, et al.. (2024). Block Copolymer Self-Assembly for Biological and Chemical Sensing. ACS Applied Polymer Materials. 6(24). 14970–15001. 10 indexed citations
3.
Petit‐Etienne, Camille, et al.. (2024). Controlled Anisotropic Wetting by Plasma Treatment for Directed Self-Assembly of High-χ Block Copolymers. ACS Applied Materials & Interfaces. 16(21). 27841–27849. 3 indexed citations
4.
Delaye, V., Nicolas Bernier, David Cooper, et al.. (2016). Nano-characterization of switching mechanism in HfO2-based oxide resistive memories by TEM-EELS-EDS. HAL (Le Centre pour la Communication Scientifique Directe). 1 indexed citations
5.
Blonkowski, S., et al.. (2015). Nanoscale Characterization of High-K/IL Gate Stack TDDB Distributions After High-Field Prestress Pulses. IEEE Transactions on Device and Materials Reliability. 15(3). 298–307. 1 indexed citations
6.
7.
Blonkowski, S., et al.. (2013). Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy. Microelectronics Reliability. 53(12). 1857–1862. 5 indexed citations
8.
Chevalier, N., E. Martínez, D. Mariolle, et al.. (2011). The Protocol Of KFM Characterization On Cross-section Of CdS∕CdTe Thin Film Solar Cell. AIP conference proceedings. 118–122. 1 indexed citations
9.
Baron, T., F. Dhalluin, G. Rosaz, et al.. (2011). Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires. Nanoscale Research Letters. 6(1). 187–187. 16 indexed citations
10.
Delcroix, P., S. Blonkowski, & M. Kogelschatz. (2011). Pre-breakdown negative differential resistance in thin oxide film: Conductive-atomic force microscopy observation and modelling. Journal of Applied Physics. 110(3). 3 indexed citations
11.
Delcroix, P., S. Blonkowski, M. Kogelschatz, et al.. (2011). SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum. Microelectronic Engineering. 88(7). 1376–1379. 8 indexed citations
12.
Aissou, Karim, M. Kogelschatz, & T. Baron. (2009). Self-assembling study of a cylinder-forming block copolymer via a nucleation–growth mechanism. Nanotechnology. 20(9). 95602–95602. 11 indexed citations
13.
Aissou, Karim, et al.. (2008). Fabrication of Well-Organized and Densely Packed Si Nanopillars Containing SiGe Nanodots by Using Block Copolymer Templates. Chemistry of Materials. 20(19). 6183–6188. 10 indexed citations
14.
Aissou, Karim, et al.. (2007). Phase Behavior in Thin Films of Cylinder-Forming Diblock Copolymer:  Deformation and Division of Heptacoordinated Microdomains. Macromolecules. 40(14). 5054–5059. 19 indexed citations
15.
Aissou, Karim, M. Kogelschatz, T. Baron, & P. Gentile. (2007). Self-assembled block polymer templates as high resolution lithographic masks. Surface Science. 601(13). 2611–2614. 29 indexed citations
16.
Mori, Masahito, et al.. (2006). Time-resolved measurements of Cl2 density in high-density plasmas and application. Applied Physics Letters. 88(5). 18 indexed citations
17.
Kogelschatz, M., G. Cunge, & N. Sadeghi. (2006). Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption. The European Physical Journal Applied Physics. 33(3). 205–212. 9 indexed citations
18.
Cunge, Gilles, M. Kogelschatz, O. Joubert, & N. Sadeghi. (2005). Plasma–wall interactions during silicon etching processes in high-density HBr/Cl2/O2plasmas. Plasma Sources Science and Technology. 14(2). S42–S52. 45 indexed citations
19.
Kogelschatz, M., et al.. (2004). Analysis of the chemical composition and deposition mechanism of the SiOx–Cly layer on the plasma chamber walls during silicon gate etching. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 22(3). 624–635. 37 indexed citations
20.
Kogelschatz, M., G. Cunge, O. Joubert, L. Vallier, & N. Sadeghi. (2004). Correlation and Interaction between Sidewall Passivation and Chamber Walls Deposition During Silicon Gate Etching. Contributions to Plasma Physics. 44(5-6). 413–425. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by D. Rapakoulias Breakdown of academic impact, for papers by Naoki Wada Breakdown of academic impact, for papers by E. Bedel‐Pereira Breakdown of academic impact, for papers by Erick Fuoco Breakdown of academic impact, for papers by Shanzhong Wang Breakdown of academic impact, for papers by Norikuni Yabumoto Breakdown of academic impact, for papers by C. Mukherjee Breakdown of academic impact, for papers by Tania E. Sandoval Breakdown of academic impact, for papers by Marco Capelli Breakdown of academic impact, for papers by M. R. Johnson
Rankless by CCL
2026