Alexandre Crisci

1.8k total citations
59 papers, 1.5k citations indexed

About

Alexandre Crisci is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Alexandre Crisci has authored 59 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Materials Chemistry, 33 papers in Electrical and Electronic Engineering and 10 papers in Condensed Matter Physics. Recurrent topics in Alexandre Crisci's work include Semiconductor materials and devices (21 papers), Diamond and Carbon-based Materials Research (10 papers) and GaN-based semiconductor devices and materials (10 papers). Alexandre Crisci is often cited by papers focused on Semiconductor materials and devices (21 papers), Diamond and Carbon-based Materials Research (10 papers) and GaN-based semiconductor devices and materials (10 papers). Alexandre Crisci collaborates with scholars based in France, United States and Czechia. Alexandre Crisci's co-authors include Frédéric Maillard, Luis Castanheira, Laëtitia Dubau, Fábio H. B. Lima, Wanderson O. Silva, Michel Mermoux, E. Blanquet, Jean-Paul Mardon, Raphaël Boichot and Christian Duriez and has published in prestigious journals such as Journal of Applied Physics, Chemistry of Materials and The Journal of Physical Chemistry B.

In The Last Decade

Alexandre Crisci

58 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Alexandre Crisci France 23 884 688 497 189 160 59 1.5k
Akihiko Kato Japan 23 853 1.0× 1.5k 2.1× 376 0.8× 167 0.9× 76 0.5× 85 2.0k
Ching‐Shun Ku Taiwan 21 612 0.7× 767 1.1× 290 0.6× 144 0.8× 57 0.4× 74 1.4k
N. Laidani Italy 25 657 0.7× 1.0k 1.5× 278 0.6× 258 1.4× 429 2.7× 103 1.6k
G. A. Botton Canada 16 610 0.7× 662 1.0× 269 0.5× 200 1.1× 136 0.8× 37 1.4k
Fu-He Wang China 24 581 0.7× 879 1.3× 260 0.5× 144 0.8× 136 0.8× 85 1.6k
Magnus Garbrecht Australia 23 561 0.6× 713 1.0× 328 0.7× 176 0.9× 234 1.5× 69 1.3k
Andrew C. Lang United States 17 662 0.7× 1.6k 2.4× 324 0.7× 312 1.7× 109 0.7× 55 2.1k
S.O. Saied United Kingdom 14 647 0.7× 661 1.0× 229 0.5× 147 0.8× 335 2.1× 36 1.3k
M.P. dos Santos Portugal 24 1.1k 1.3× 1.3k 1.9× 259 0.5× 253 1.3× 290 1.8× 70 1.9k
Chengyu Song United States 21 501 0.6× 914 1.3× 244 0.5× 160 0.8× 82 0.5× 81 1.5k

Countries citing papers authored by Alexandre Crisci

Since Specialization
Citations

This map shows the geographic impact of Alexandre Crisci's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alexandre Crisci with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alexandre Crisci more than expected).

Fields of papers citing papers by Alexandre Crisci

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alexandre Crisci. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alexandre Crisci. The network helps show where Alexandre Crisci may publish in the future.

Co-authorship network of co-authors of Alexandre Crisci

This figure shows the co-authorship network connecting the top 25 collaborators of Alexandre Crisci. A scholar is included among the top collaborators of Alexandre Crisci based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Alexandre Crisci. Alexandre Crisci is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chaussende, Didier, Alexandre Crisci, Stéphane Coindeau, et al.. (2024). Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications. Materials Science in Semiconductor Processing. 182. 108673–108673. 8 indexed citations
2.
Gassilloud, R., F. Mercier, Arnaud Mantoux, et al.. (2023). Chemical conversion of MoS2 thin films deposited by atomic layer deposition (ALD) into molybdenum nitride monitored by in situ reflectance measurements. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(5). 1 indexed citations
3.
Mercier, F., et al.. (2020). Synthesis of upconversion TiO2:Er3+-Yb3+ nanoparticles and deposition of thin films by spin coating technique. Ceramics International. 46(18). 28183–28192. 19 indexed citations
4.
Tian, Liang, Alexandre Crisci, G. Giusti, et al.. (2018). Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition. Surface and Coatings Technology. 347. 181–190. 28 indexed citations
5.
Asset, Tristan, Nathalie Job, Yan Busby, et al.. (2017). Porous Hollow PtNi/C Electrocatalysts: Carbon Support Considerations To Meet Performance and Stability Requirements. ACS Catalysis. 8(2). 893–903. 67 indexed citations
6.
Hung, Chu Manh, Liang Tian, V. Cantelli, et al.. (2017). Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition. Journal of Electronic Materials. 46(6). 3512–3517. 7 indexed citations
7.
Chubarov, Mikhail, Raphaël Boichot, F. Mercier, et al.. (2016). Growth of boron nitride films on w‐AlN (0001), 4° off‐cut 4H‐SiC (0001), W (110) and Cr (110) substrates by Chemical Vapor Deposition. Crystal Research and Technology. 51(3). 231–238. 11 indexed citations
8.
Fave, Alain, E. Blanquet, Alexandre Crisci, et al.. (2015). Characterization of Al2O3 Thin Films Prepared by Thermal ALD. Energy Procedia. 77. 558–564. 43 indexed citations
9.
Crisci, Alexandre, et al.. (2013). Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications. ECS Transactions. 58(10). 223–233. 4 indexed citations
10.
Boichot, Raphaël, F. Mercier, S. Lay, et al.. (2013). Epitaxial growth of AlN on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy: Influence of the gas phase N/Al ratio and low temperature protective layer. Surface and Coatings Technology. 237. 118–125. 16 indexed citations
11.
Giz, M. Janete, et al.. (2011). Search for multi-functional catalysts: The electrooxidation of acetaldehyde on Platinum–Ruthenium–Rhodium electrodeposits. Journal of Electroanalytical Chemistry. 660(1). 85–90. 6 indexed citations
12.
Mermoux, Michel, et al.. (2011). Raman investigation of pre- and post-breakaway oxide scales formed on Zircaloy-4 and M5® in air at high temperature. Journal of Nuclear Materials. 421(1-3). 160–171. 48 indexed citations
13.
Koltsov, Alexey, Alexandre Crisci, F. Hodaj, & N. Eustathopoulos. (2009). The effect of carbon nanolayers on wetting of alumina by NiSi alloys. Journal of Materials Science. 45(8). 2062–2070. 7 indexed citations
14.
Destefanis, V., D. Rouchon, Jean‐Michel Hartmann, et al.. (2009). Structural properties of tensily strained Si layers grown on SiGe(100), (110), and (111) virtual substrates. Journal of Applied Physics. 106(4). 15 indexed citations
15.
Rouchon, D., V. Destefanis, Jean-Michel Hartmann, Alexandre Crisci, & Michel Mermoux. (2008). Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy Study. ECS Transactions. 16(10). 203–214. 2 indexed citations
16.
Chevalier, Sébastien, A. Galerie, Olivier Heintz, Rémi Chassagnon, & Alexandre Crisci. (2008). Thermal Alumina Scales on FeCrAl: Characterization and Growth Mechanism. Materials science forum. 595-598. 915–922. 18 indexed citations
17.
Crisci, Alexandre, et al.. (2008). Deep ultra-violet Raman imaging of CVD boron-doped and non-doped diamond films. Diamond and Related Materials. 17(7-10). 1207–1211. 17 indexed citations
18.
Robaut, F., et al.. (2006). Practical Aspects of Carbon Content Determination in Carburized Steels by EPMA. Microscopy and Microanalysis. 12(4). 331–334. 31 indexed citations
19.
Wellmann, Peter J., Thomas L. Straubinger, Ralf Müller, et al.. (2005). Optical mapping of aluminum doped p‐type SiC wafers. physica status solidi (a). 202(4). 598–601. 5 indexed citations
20.
Mermoux, Michel, Alexandre Crisci, & Francis Baillet. (2003). Raman Imaging Analysis of SiC Wafers. Materials science forum. 433-436. 353–356. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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