R. Beneyton

1.8k total citations
34 papers, 274 citations indexed

About

R. Beneyton is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, R. Beneyton has authored 34 papers receiving a total of 274 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 6 papers in Computational Mechanics. Recurrent topics in R. Beneyton's work include Semiconductor materials and interfaces (10 papers), Silicon and Solar Cell Technologies (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). R. Beneyton is often cited by papers focused on Semiconductor materials and interfaces (10 papers), Silicon and Solar Cell Technologies (10 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). R. Beneyton collaborates with scholars based in France, United States and Czechia. R. Beneyton's co-authors include P. Morin, H. Moriceau, M. Grégoire, Frank Fournel, P. Maury, Christophe Morales, Daniel L. Benoit, F. Rieutord, S. Zoll and B. Imbert and has published in prestigious journals such as Journal of Applied Physics, Physical Review B and Optics Express.

In The Last Decade

R. Beneyton

32 papers receiving 264 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Beneyton France 9 224 94 58 53 34 34 274
A.M. Papon France 11 468 2.1× 102 1.1× 119 2.1× 122 2.3× 27 0.8× 25 522
T. Wetteroth United States 7 218 1.0× 71 0.8× 69 1.2× 89 1.7× 15 0.4× 20 308
Taroh Inada Japan 12 294 1.3× 159 1.7× 32 0.6× 69 1.3× 28 0.8× 36 331
A. Lahav Israel 12 335 1.5× 321 3.4× 36 0.6× 95 1.8× 43 1.3× 16 436
Takanori Asano Japan 12 361 1.6× 144 1.5× 112 1.9× 82 1.5× 30 0.9× 41 403
R. Beyeler Switzerland 11 578 2.6× 150 1.6× 91 1.6× 46 0.9× 15 0.4× 29 602
Christophe Maleville France 11 463 2.1× 78 0.8× 102 1.8× 89 1.7× 13 0.4× 53 503
A. Tago Japan 10 250 1.1× 75 0.8× 57 1.0× 33 0.6× 38 1.1× 19 329
Aliekber Aktağ Türkiye 12 255 1.1× 170 1.8× 27 0.5× 154 2.9× 16 0.5× 22 344
T. Hoffman Belgium 6 449 2.0× 73 0.8× 146 2.5× 85 1.6× 21 0.6× 10 495

Countries citing papers authored by R. Beneyton

Since Specialization
Citations

This map shows the geographic impact of R. Beneyton's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Beneyton with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Beneyton more than expected).

Fields of papers citing papers by R. Beneyton

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Beneyton. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Beneyton. The network helps show where R. Beneyton may publish in the future.

Co-authorship network of co-authors of R. Beneyton

This figure shows the co-authorship network connecting the top 25 collaborators of R. Beneyton. A scholar is included among the top collaborators of R. Beneyton based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Beneyton. R. Beneyton is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Özcan, Ahmet S., C. Lavoie, Alexia Valéry, et al.. (2017). Impact of laser anneal on NiPt silicide texture and chemical composition. Journal of Applied Physics. 121(22). 7 indexed citations
3.
Beneyton, R., et al.. (2013). Macroscopic and nanometer scale stress measurement of Ni(Pt)Si silicide: Impact of thermal treatments ranging from millisecond to several hours. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(1). 3 indexed citations
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Delcroix, P., S. Blonkowski, M. Kogelschatz, et al.. (2011). SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum. Microelectronic Engineering. 88(7). 1376–1379. 8 indexed citations
7.
Grégoire, M., R. Beneyton, & P. Morin. (2011). Millisecond annealing for salicide formation: Challenges of NiSi agglomeration free process. 1–3. 2 indexed citations
8.
Denorme, S., Dominique Fleury, N. Loubet, et al.. (2010). Gate-all-around technology: Taking advantage of ballistic transport?. Solid-State Electronics. 54(9). 883–889. 18 indexed citations
9.
Cacho, F., et al.. (2010). Simulation of pattern effect induced by millisecond annealing used in advanced metal-oxide-semiconductor technologies. Journal of Applied Physics. 108(1). 8 indexed citations
10.
Cacho, F., R. Beneyton, B. Dumont, et al.. (2010). Investigation of Pattern Effects in Rapid Thermal Processing Technology: Modeling and Experimental Results. IEEE Transactions on Semiconductor Manufacturing. 23(2). 303–310. 3 indexed citations
11.
Morin, P., F. Cacho, R. Beneyton, et al.. (2010). Managing annealing pattern effects in 45nm low power CMOS technology. Solid-State Electronics. 54(9). 897–902. 1 indexed citations
12.
Beneyton, R., et al.. (2010). Formation of titanium silicide by Millisecond Anneal. 80–85. 1 indexed citations
13.
Imbert, B., R. Pantel, S. Zoll, et al.. (2009). Nickel silicide encroachment formation and characterization. Microelectronic Engineering. 87(3). 245–248. 32 indexed citations
14.
Marty, M., R. Beneyton, J. Venturini, et al.. (2009). Activation of shallow B and BF<inf>2</inf> implants in Si using Excimer laser annealing. 386–389. 2 indexed citations
15.
Imbert, B., et al.. (2008). Nitrogen impurity effects on nickel silicide formation at low temperatures – New “nitrogen co-plasma” approach. Microelectronic Engineering. 85(10). 2005–2008. 7 indexed citations
16.
Morin, P., F. Cacho, R. Beneyton, et al.. (2008). Simulation of the sub-melt laser anneal process in 45 CMOS technology—Application to the thermal pattern effects. Materials Science and Engineering B. 154-155. 31–34. 13 indexed citations
17.
Fournel, Frank, H. Moriceau, & R. Beneyton. (2006). Low Temperature Void Free Hydrophilic or Hydrophobic Silicon Direct Bonding. ECS Transactions. 3(6). 139–146. 13 indexed citations
18.
Rieutord, F., H. Moriceau, R. Beneyton, et al.. (2006). Rough Surface Adhesion Mechanisms for Wafer Bonding. ECS Transactions. 3(6). 205–215. 28 indexed citations
19.
Beneyton, R., G. Grenet, M. Gendry, et al.. (2005). Experimental and theoretical investigation into the difficulties of thallium incorporation into III-V semiconductors. Physical Review B. 72(12). 17 indexed citations
20.
Beneyton, R., B. Canut, Philippe Régreny, et al.. (2004). Thallium incorporation into GaAs(001) grown by solid source MBE: critical thickness and stability under annealing. Journal of Crystal Growth. 275(1-2). e1171–e1175. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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