I. Dói

656 total citations
62 papers, 510 citations indexed

About

I. Dói is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, I. Dói has authored 62 papers receiving a total of 510 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 28 papers in Materials Chemistry and 18 papers in Biomedical Engineering. Recurrent topics in I. Dói's work include Semiconductor materials and devices (33 papers), Silicon Nanostructures and Photoluminescence (19 papers) and Metal and Thin Film Mechanics (11 papers). I. Dói is often cited by papers focused on Semiconductor materials and devices (33 papers), Silicon Nanostructures and Photoluminescence (19 papers) and Metal and Thin Film Mechanics (11 papers). I. Dói collaborates with scholars based in Brazil, Austria and Israel. I. Dói's co-authors include J. A. Diniz, Jacobus W. Swart, Lucas Petersen Barbosa Lima, Ricardo Cotrin Teixeira, Anerise de Barros, Vı́tor Baranauskas, E.J. Corat, A. Peled, C. A. S. Lima and V.J. Trava-Airoldi and has published in prestigious journals such as Journal of Materials Science, Applied Surface Science and Thin Solid Films.

In The Last Decade

I. Dói

53 papers receiving 501 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
I. Dói Brazil	10	310	228	183	102	67	62	510
Jin-Seok Park South Korea	15	310 1.0×	422 1.9×	280 1.5×	105 1.0×	37 0.6×	35	668
Erik McCullen United States	10	259 0.8×	239 1.0×	127 0.7×	158 1.5×	57 0.9×	23	539
Thomas Kups Germany	16	256 0.8×	353 1.5×	93 0.5×	76 0.7×	34 0.5×	44	574
Won Mok Kim South Korea	15	415 1.3×	295 1.3×	167 0.9×	83 0.8×	68 1.0×	41	600
Y.C. Chen Taiwan	13	304 1.0×	221 1.0×	161 0.9×	44 0.4×	50 0.7×	38	527
Dipak Paramanik India	16	309 1.0×	391 1.7×	127 0.7×	53 0.5×	106 1.6×	39	648
Franklin Chau-Nan Hong Taiwan	15	518 1.7×	502 2.2×	193 1.1×	141 1.4×	60 0.9×	31	866
Scott C. Moulzolf United States	17	449 1.4×	299 1.3×	287 1.6×	191 1.9×	71 1.1×	20	719
Volkan Şenay Türkiye	15	363 1.2×	439 1.9×	73 0.4×	122 1.2×	76 1.1×	54	657
Wen‐Ching Shih Taiwan	14	326 1.1×	454 2.0×	157 0.9×	84 0.8×	86 1.3×	56	612

Countries citing papers authored by I. Dói

Since Specialization

Citations

This map shows the geographic impact of I. Dói's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Dói with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Dói more than expected).

Fields of papers citing papers by I. Dói

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Dói. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Dói. The network helps show where I. Dói may publish in the future.

Co-authorship network of co-authors of I. Dói

This figure shows the co-authorship network connecting the top 25 collaborators of I. Dói. A scholar is included among the top collaborators of I. Dói based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with I. Dói. I. Dói is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Dói, I., et al.. (2020). Effect of Nucleation Parameters of Ge Quantum Dots Grown over Silicon Oxide by LPCVD. Journal of Integrated Circuits and Systems. 2(2). 81–84.

Dói, I., et al.. (2014). Effect of annealing time on memory behavior of MOS structures based on Ge nanoparticles. 3. 1–5.

Barros, Anerise de, et al.. (2014). Electrolyte-Insulator-Semiconductor field effect device for pH detecting. 1–4. 5 indexed citations

Lima, Lucas Petersen Barbosa, et al.. (2012). Oxygen incorporation and dipole variation in tantalum nitride film used as metal-gate electrode. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(4). 2 indexed citations

Dói, I., et al.. (2010). THERMAL DEGRADATION OF NiPt GERMANOSILICIDE FILMS FORMED ON UNDOPED AND DOPED SiGe SUBSTRATES. 27(4). 217–221. 1 indexed citations

Dói, I., et al.. (2009). Highly stable hydrophilic surfaces of PDMS thin layer obtained by UV radiation and oxygen plasma treatments. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(2). 189–192. 69 indexed citations

Santos, Rafael Eugenio dos, I. Dói, J. A. Diniz, Jacobus W. Swart, & Sebastião Gomes dos Santos Filho. (2008). INVESTIGATION OF Ni SILICIDES FORMATION ON (100) Si BY X-RAY DIFFRACTION (XRD). 23(1). 32–35. 1 indexed citations

Teixeira, Ricardo Cotrin, et al.. (2008). INFLUENCE OF TEMPERATURE ON THE DEPOSITION RATE OF POLYCRYSTALLINE SILICON OBTAINED BY VERTICAL LPCVD. 23(2). 49–51. 1 indexed citations

Teixeira, Ricardo Cotrin, et al.. (2007). Structural and surface properties of Si1−xGex thin films obtained by reduced pressure CVD. Applied Surface Science. 254(1). 207–212. 2 indexed citations

10.

Teixeira, Ricardo Cotrin, et al.. (2007). Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(4). 1166–1170. 4 indexed citations

11.

Dói, I., et al.. (2007). Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrix. Journal of Materials Science. 42(18). 7757–7761. 9 indexed citations

12.

Rodríguez, E., et al.. (2006). Characterization and modeling of antireflective coatings of SiO2, Si3N4, and SiOxNy deposited by electron cyclotron resonance enhanced plasma chemical vapor deposition. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(2). 823–827. 8 indexed citations

13.

Teixeira, Ricardo Cotrin, et al.. (2006). Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD. Brazilian Journal of Physics. 36(2a). 466–469.

14.

Swart, Jacobus W., et al.. (2006). Synthesis of Ge Nanocrystals Grown by Ion Implantation and Subsequent Annealing. 76. 151–155. 2 indexed citations

15.

Oliveira, A., et al.. (2006). Dynamic Characterization of Thermo-Resistive Micro-Sensor. 2005 IEEE Instrumentationand Measurement Technology Conference Proceedings. 3. 1647–1651. 3 indexed citations

16.

Ferreira, Luiz Otávio, et al.. (2005). A novel Si micromachined moving-coil induction actuated mm-sized resonant scanner. Journal of Micromechanics and Microengineering. 16(1). 165–172. 8 indexed citations

17.

Teixeira, Ricardo Cotrin, et al.. (2004). Micro-Raman stress characterization of polycrystalline silicon films grown at high temperature. Materials Science and Engineering B. 112(2-3). 160–164. 44 indexed citations

18.

Melo, Anely Maciel de, et al.. (2004). A submm-wave/far IR uncooled bolometer system and applications. 2. 785–789. 2 indexed citations

19.

Dói, I., et al.. (1999). Properties of DLC films deposited by an oxyacetylene flame. Diamond and Related Materials. 8(8-9). 1682–1685. 5 indexed citations

20.

Berni, L. A., et al.. (1989). Optimization of the implosion phase on TC-I by light emission analysis. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 280(2-3). 597–601. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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