Satoshi Kamiyama

10.5k total citations · 2 hit papers
529 papers, 8.7k citations indexed

About

Satoshi Kamiyama is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Satoshi Kamiyama has authored 529 papers receiving a total of 8.7k indexed citations (citations by other indexed papers that have themselves been cited), including 394 papers in Condensed Matter Physics, 235 papers in Electrical and Electronic Engineering and 213 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Satoshi Kamiyama's work include GaN-based semiconductor devices and materials (394 papers), Ga2O3 and related materials (194 papers) and ZnO doping and properties (156 papers). Satoshi Kamiyama is often cited by papers focused on GaN-based semiconductor devices and materials (394 papers), Ga2O3 and related materials (194 papers) and ZnO doping and properties (156 papers). Satoshi Kamiyama collaborates with scholars based in Japan, Sweden and United States. Satoshi Kamiyama's co-authors include Isamu Akasaki, Motoaki Iwaya, Hiroshi Amano, Tetsuya Takeuchi, Daisuke Iida, Yasuo Nara, Akira Bandoh, Narihito Okada, Masataka Imura and Kenichiro Takeda and has published in prestigious journals such as Nature Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Satoshi Kamiyama

514 papers receiving 8.3k citations

Hit Papers

Origin of defect-insensitive emission probability in In-c... 2006 2026 2012 2019 2006 2011 100 200 300 400 500
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
    2006 553 citations Satoshi Kamiyama, Hiroshi Amano et al. profile →
  2. Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
    2011 241 citations Motoaki Iwaya, Tetsuya Takeuchi et al. Applied Physics Express profile →

Peers

Satoshi Kamiyama
Zlatko Sitar United States
Jung Han United States
Ramón Collazo United States
Martin Kuball United Kingdom
J. Li United States
H. Morkoç United States
S. Strite United States
Charles R. Eddy United States
A. Krost Germany
A. Dadgar Germany
Zlatko Sitar United States
Satoshi Kamiyama
Citations per year, relative to Satoshi Kamiyama Satoshi Kamiyama (= 1×) peers Zlatko Sitar

Countries citing papers authored by Satoshi Kamiyama

Since Specialization
Citations

This map shows the geographic impact of Satoshi Kamiyama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Satoshi Kamiyama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Satoshi Kamiyama more than expected).

Fields of papers citing papers by Satoshi Kamiyama

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Satoshi Kamiyama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Satoshi Kamiyama. The network helps show where Satoshi Kamiyama may publish in the future.

Co-authorship network of co-authors of Satoshi Kamiyama

This figure shows the co-authorship network connecting the top 25 collaborators of Satoshi Kamiyama. A scholar is included among the top collaborators of Satoshi Kamiyama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Satoshi Kamiyama. Satoshi Kamiyama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Takeuchi, Tetsuya, et al.. (2024). In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements. physica status solidi (b). 261(11). 1 indexed citations
3.
Hasegawa, Naoki, Norikatsu Koide, Tetsuya Takeuchi, et al.. (2024). Characteristics of Stacked GaInN‐Based Red, Green, and Blue Full‐Color Monolithic μLED Arrays Connected via Tunnel Junctions. physica status solidi (a). 221(21). 2 indexed citations
4.
Kondo, Ryosuke, Eri Matsubara, Sho Iwayama, et al.. (2023). Fabrication of vertical AlGaN-based ultraviolet-B laser diodes using a laser lift-off method. Applied Physics Express. 16(10). 104001–104001. 5 indexed citations
5.
Hasegawa, Naoki, Tetsuya Takeuchi, Satoshi Kamiyama, et al.. (2023). RGB monolithic GaInN-based μLED arrays connected via tunnel junctions. Applied Physics Express. 16(8). 84001–84001. 19 indexed citations
6.
7.
Iwayama, Sho, Tetsuya Takeuchi, Satoshi Kamiyama, et al.. (2022). A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water. Applied Physics Express. 15(11). 116502–116502. 4 indexed citations
8.
Tanaka, Shunya, Kazuki Yamada, Sho Iwayama, et al.. (2022). Reduction of dislocation density in lattice-relaxed Al0.68Ga0.32N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance of UV-B laser diodes. Applied Physics Express. 15(3). 31004–31004. 18 indexed citations
9.
Tanaka, Takayuki, et al.. (2022). High-quality n-type conductive Si-doped AlInN/GaN DBRs with hydrogen cleaning. Applied Physics Express. 15(11). 112007–112007. 4 indexed citations
10.
Iwaya, Motoaki, Shunya Tanaka, Kazuki Yamada, et al.. (2021). Recent development of UV-B laser diodes. Japanese Journal of Applied Physics. 61(4). 40501–40501. 19 indexed citations
11.
Tanaka, Shunya, Kosuke Sato, Motoaki Iwaya, et al.. (2020). Effects of Mg and Si doping in the guide layers of AlGaN-based ultraviolet-B band lasers. Journal of Crystal Growth. 535. 125537–125537. 13 indexed citations
12.
Iwayama, Sho, Motoaki Iwaya, Tetsuya Takeuchi, et al.. (2020). High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing. physica status solidi (a). 217(14). 18 indexed citations
13.
Iida, Kazuyoshi, Weifang Lu, Atsushi Suzuki, et al.. (2020). MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs. Journal of Crystal Growth. 539. 125571–125571. 6 indexed citations
14.
Iwaya, Motoaki, et al.. (2019). High photosensitivity AlGaN/GaInN/GaN heterojunction field-effect transistor type visible photosensors. Japanese Journal of Applied Physics. 58(SC). SCCC22–SCCC22. 2 indexed citations
15.
Yamamoto, Kengo, Dong‐Pyo Han, Satoshi Kamiyama, et al.. (2019). Optimization of indium tin oxide layer thickness for surface-plasmon-enhanced green light-emitting diodes. Japanese Journal of Applied Physics. 58(SC). SCCC27–SCCC27. 3 indexed citations
16.
Han, Dong‐Pyo, Kengo Yamamoto, Satoshi Kamiyama, et al.. (2019). Improvement of emission efficiency with a sputtered AlN buffer layer in GaInN-based green light-emitting diodes. Japanese Journal of Applied Physics. 58(SC). SC1040–SC1040. 7 indexed citations
17.
Kim, Myung‐Hee Y., Yoshiki Saito, Kazuyoshi Iida, et al.. (2019). Sapphire substrate off-angle and off-direction dependences on characteristics of AlGaN-based deep ultraviolet light-emitting diodes. Japanese Journal of Applied Physics. 58(SC). SC1025–SC1025. 14 indexed citations
18.
Iida, Kazuyoshi, Atsushi Suzuki, Hideki Murakami, et al.. (2019). Hybrid simulation of light extraction efficiency in multi-quantum-shell (MQS) NW (nanowire) LED with a current diffusion layer. Japanese Journal of Applied Physics. 58(SC). SCCC17–SCCC17. 12 indexed citations
19.
Iwayama, Sho, Motoaki Iwaya, Tetsuya Takeuchi, et al.. (2019). Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers. Japanese Journal of Applied Physics. 58(SC). SC1052–SC1052. 38 indexed citations
20.
Nakano, Koji, Masataka Imura, Yujiro Hirose, et al.. (2006). Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates. physica status solidi (a). 203(7). 1632–1635. 48 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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