R. Dimitrov

8.2k citations

53 papers · 6.7k indexed · 3 hit papers · h-index 27

Impact in

Condensed Matter Physics top 0.1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 0.5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 48
- GaN-based semiconductor devices and materials 46
Electronic, Optical and Magnetic Materials 27
- Ga2O3 and related materials 27

Co-authors: O. Ambacher M. Stutzmann L.F. Eastman J. Smart J. R. Shealy W. J. Schaff Michael J. Murphy Nils Weimann
Journals: Applied Physics Letters (7 papers)Journal of Applied Physics (7 papers)physica status solidi (b) (5 papers)Japanese Journal of Applied Physics (3 papers)Journal of Crystal Growth (3 papers)
Partner nations: Germany United States Spain

In The Last Decade

R. Dimitrov

51 papers receiving 6.5k citations

Hit Papers

align trajectories log scale

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures 2000 · 1.3k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2000 Journal of Applied Physics
1999 Journal of Applied Physics
1997 Journal of Applied Physics

Peers

Countries citing papers authored by R. Dimitrov

Since Specialization

Citations

This map shows the geographic impact of R. Dimitrov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Dimitrov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Dimitrov more than expected).

Fields of papers citing papers by R. Dimitrov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Dimitrov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Dimitrov. The network helps show where R. Dimitrov may publish in the future.

Co-authors

The 25 scholars most cited alongside R. Dimitrov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. Dimitrov Line = papers co-authored together R. Dimitrov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Power limits of polarization-induced AlGaN/GaN HEMT's L.F. Eastman, Joané Jansen, J. Smart, V. Tilak, Eduardo M. Chumbes, Hyungtak Kim, T. Prunty, Nils Weimann, R. Dimitrov, O. Ambacher, W. J. Schaff, J. R. Shealy	2002	1
2	Electron affinity of AlxGa1−xN(0001) surfaces Applied Physics Letters ·S Grabowski, M. Schneider, Hermann Nienhaus, Winfried Mönch, R. Dimitrov, O. Ambacher, M. Stutzmann	2001	188
3	Transport Properties of Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarisation in AlGaN/GaN Heterostructures physica status solidi (b) ·A. Link, T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, Umesh K. Mishra, James S. Speck	2001	7
4	Photoluminescence of Ga-face AlGaN/GaN single heterostructures Materials Science and Engineering B ·Gema Martínez‐Criado, A. Cros, A. Cantarero, C. R. Miskys, O. Ambacher, R. Dimitrov, M. Stutzmann	2001	6
5	Ionization Energy and Electron Affinity of Clean and Oxidized Al_xGa_1−xN(0001) Surfaces MRS Proceedings ·Hermann Nienhaus, M. Schneider, S Grabowski, Winfried Mönch, R. Dimitrov, O. Ambacher, M. Stutzmann	2001	9
6	Playing with Polarity physica status solidi (b) ·M. Stutzmann, O. Ambacher, Martin Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. James Schuck, Robert D. Grober	2001	151
7	Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. Kaiser, Michael Jakob, J. Zweck, W. Gebhardt, O. Ambacher, R. Dimitrov, A. Schremer, J. Smart, J. R. Shealy	2000	48
8	The effect of As4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates Applied Physics Letters ·W. Yeo, R. Dimitrov, W. J. Schaff, L.F. Eastman	2000	6
9	Lateral polarity heterostructures by overgrowth of patterned Al_xGa_1-xN nucleation layers MRS Proceedings ·R. Dimitrov, V. Tilak, Michael J. Murphy, W. J. Schaff, L.F. Eastman, Alisson Padilha de Lima, Y. Qiu, O. Ambacher, M. Stutzmann	2000	15
10	Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices physica status solidi (b) ·O. Ambacher, R. Dimitrov, M. Stutzmann, B. E. Foutz, Michael J. Murphy, J. Smart, J. R. Shealy, Nils Weimann, K. Chu, Ursi Lugenbuhl, Louise Burchill, Jonathan Farhi, W. J. Schaff, L.F. Eastman	1999	113
11	High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters ·Michael J. Murphy, K. Chu, Luis Francisco Zavargo Peche, W. Yeo, W. J. Schaff, O. Ambacher, L.F. Eastman, Raquel Montes Martínez, J. Silcox, R. Dimitrov, M. Stutzmann	1999	44
12	Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures Journal of Applied Physics ·O. Ambacher, J. Smart, J. R. Shealy, Nils Weimann, K. Chu, Michael J. Murphy, W. J. Schaff, L.F. Eastman, R. Dimitrov, L.L. Wittmer, M. Stutzmann, W. Rieger, J. Hilsenbeck Hit paper breakdown →	1999	2340
13	Comparison of N-face and Ga-face AlGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy Japanese Journal of Applied Physics ·R. Dimitrov, Arnan Mitchell, L.L. Wittmer, O. Ambacher, M. Stutzmann, J. Hilsenbeck, W. Rieger	1999	26
14	Carrier Confinement in AlGaN/GaN Heterostructures Grown by Plasma Induced Molecular Beam Epitaxy physica status solidi (a) ·R. Dimitrov, L.L. Wittmer, Michelle Ivory M. Bosio, Arnan Mitchell, O. Ambacher, M. Stutzmann	1998	32
15	Properties and applications of MBE grown AlGaN Materials Science and Engineering B ·M. Stutzmann, O. Ambacher, Sahriani Sahriani, Martin S. Brandt, H. Angerer, R. Dimitrov, N. M. Reinacher, T. Metzger, R. Höpler, Daniel Brunner, Ryan Kueh, Hu Min Zong, Perth Winning	1997	47
16	Hydrogen in Gallium Nitride Grown by MOCVD physica status solidi (a) ·O. Ambacher, H. Angerer, R. Dimitrov, W. Rieger, M. Stutzmann, G. Dollinger, A. Bergmaier	1997	33
17	Optical constants of epitaxial AlGaN films and their temperature dependence Journal of Applied Physics ·Daniel Brunner, H. Angerer, E. Bustarret, Ryan Kueh, R. Höpler, R. Dimitrov, O. Ambacher, M. Stutzmann Hit paper breakdown →	1997	512
18	Growth of and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium Journal of Crystal Growth ·O. Ambacher, R. Dimitrov, В. С. Арутюнов, T. Metzger, W. Rieger, M. Stutzmann	1997	17
19	Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films Applied Physics Letters ·W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, M. Stutzmann	1996	191
20	Optical patterning of GaN films Applied Physics Letters ·M. K. Kelly, O. Ambacher, E. Velon, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann	1996	118

About R. Dimitrov

R. Dimitrov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 53 papers that have together received 6.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (27 papers), ZnO doping and properties (16 papers), Semiconductor materials and devices (13 papers), Metal and Thin Film Mechanics (12 papers), Semiconductor Quantum Structures and Devices (11 papers), Acoustic Wave Resonator Technologies (5 papers) and Photocathodes and Microchannel Plates (3 papers). The work is most often cited by research in Condensed Matter Physics (6.1k citations), Electronic, Optical and Magnetic Materials (3.1k citations), Atomic and Molecular Physics, and Optics (2.0k citations), Materials Chemistry (2.4k citations) and Electrical and Electronic Engineering (2.9k citations). R. Dimitrov has collaborated with scholars based in Germany, United States and Spain. Frequent co-authors include O. Ambacher, M. Stutzmann, L.F. Eastman, J. Smart, J. R. Shealy, W. J. Schaff, Michael J. Murphy, Nils Weimann, K. Chu and W. Rieger. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, physica status solidi (b), Japanese Journal of Applied Physics and Journal of Crystal Growth.

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