E. J. Tarsa

2.8k total citations
31 papers, 2.4k citations indexed

About

E. J. Tarsa is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, E. J. Tarsa has authored 31 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Condensed Matter Physics, 16 papers in Materials Chemistry and 15 papers in Electrical and Electronic Engineering. Recurrent topics in E. J. Tarsa's work include GaN-based semiconductor devices and materials (16 papers), Ga2O3 and related materials (10 papers) and Semiconductor materials and devices (10 papers). E. J. Tarsa is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Ga2O3 and related materials (10 papers) and Semiconductor materials and devices (10 papers). E. J. Tarsa collaborates with scholars based in United States, Australia and Canada. E. J. Tarsa's co-authors include James S. Speck, Steven P. DenBaars, P. Fini, B. Heying, Umesh K. Mishra, S. Keller, Xuehua Wu, J. P. Ibbetson, P. Kozodoy and C. R. Elsass and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

E. J. Tarsa

30 papers receiving 2.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. J. Tarsa United States	17	1.8k	1.2k	1.1k	980	582	31	2.4k
H. Teisseyre Poland	24	2.1k 1.2×	1.2k 1.0×	1.1k 1.0×	851 0.9×	750 1.3×	103	2.5k
Shunro Fuke Japan	22	1.3k 0.7×	1.2k 1.0×	977 0.9×	902 0.9×	500 0.9×	75	2.1k
A. V. Govorkov Russia	32	2.0k 1.1×	1.0k 0.8×	1.3k 1.2×	1.3k 1.3×	553 1.0×	139	2.5k
Tsvetanka Zheleva United States	25	2.0k 1.1×	1.4k 1.2×	1.0k 0.9×	1.2k 1.2×	669 1.1×	73	2.9k
M. Laügt France	27	1.8k 1.0×	1.3k 1.1×	1.2k 1.1×	820 0.8×	749 1.3×	67	2.5k
O. Semchinova Germany	13	2.1k 1.2×	1.2k 0.9×	1.1k 1.0×	676 0.7×	711 1.2×	42	2.5k
H. Angerer Germany	21	1.6k 0.9×	845 0.7×	737 0.7×	765 0.8×	623 1.1×	33	2.1k
W. J. Schaff United States	27	2.0k 1.1×	1.2k 1.0×	1.2k 1.1×	1.0k 1.0×	1.1k 1.9×	85	2.8k
A. Georgakilas Greece	29	1.8k 1.0×	863 0.7×	947 0.9×	1.3k 1.3×	928 1.6×	202	2.7k
R. S. Kern United States	23	1.5k 0.8×	654 0.5×	608 0.6×	1.1k 1.1×	611 1.0×	56	2.0k

Countries citing papers authored by E. J. Tarsa

Since Specialization

Citations

This map shows the geographic impact of E. J. Tarsa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. J. Tarsa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. J. Tarsa more than expected).

Fields of papers citing papers by E. J. Tarsa

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. J. Tarsa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. J. Tarsa. The network helps show where E. J. Tarsa may publish in the future.

Co-authorship network of co-authors of E. J. Tarsa

This figure shows the co-authorship network connecting the top 25 collaborators of E. J. Tarsa. A scholar is included among the top collaborators of E. J. Tarsa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. J. Tarsa. E. J. Tarsa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Parish, Giacinta, S. Keller, P. Kozodoy, et al.. (2002). Low dark current p-i-n (Al,Ga)N-based solar-blind UV detectors on laterally epitaxially overgrown GaN. 22. 175–178. 1 indexed citations

Tarsa, E. J., P. Kozodoy, J. P. Ibbetson, et al.. (2000). Solar-blind AlGaN-based inverted heterostructure photodiodes. Applied Physics Letters. 77(3). 316–318. 75 indexed citations

Pulfrey, D.L., et al.. (1999). Towards an AlGaN, Solar-Blind, p–i–n Photodetector. physica status solidi (a). 176(1). 169–173. 2 indexed citations

Pulfrey, D.L., et al.. (1999). Towards an AlGaN, Solar-Blind, p–i–n Photodetector. physica status solidi (a). 176(1). 169–173. 4 indexed citations

Hansen, P., Y. E. Strausser, Andrew Erickson, et al.. (1998). Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition. Applied Physics Letters. 72(18). 2247–2249. 223 indexed citations

Wu, Xuehua, P. Fini, E. J. Tarsa, et al.. (1998). Dislocation generation in GaN heteroepitaxy. Journal of Crystal Growth. 189-190. 231–243. 249 indexed citations

Tarsa, E. J., B. Heying, Xuemei Wu, et al.. (1997). Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy. Journal of Applied Physics. 82(11). 5472–5479. 343 indexed citations

Eddy, M. M., et al.. (1997). Oxide Epitaxial Lift-Off (OELO). MRS Proceedings. 474. 6 indexed citations

Zinck, J. J., E. J. Tarsa, B. Brar, & James S. Speck. (1997). Desorption behavior of antimony multilayer passivation on GaAs (001). Journal of Applied Physics. 82(12). 6067–6072. 13 indexed citations

10.

Mondry, M.J., E. J. Tarsa, & L.A. Coldren. (1996). Molecular beam epitaxial growth of strained AIGalnAs multi-quantum well lasers on InP. Journal of Electronic Materials. 25(6). 948–954. 2 indexed citations

11.

Tarsa, E. J., et al.. (1996). Growth-related stress and surface morphology in homoepitaxial SrTiO3 films. Applied Physics Letters. 68(4). 490–492. 101 indexed citations

12.

Tarsa, E. J., Xuehua Wu, J. P. Ibbetson, James S. Speck, & J. J. Zinck. (1995). Growth of epitaxial MgO films on Sb-passivated (001)GaAs: Properties of the MgO/GaAs interface. Applied Physics Letters. 66(26). 3588–3590. 22 indexed citations

13.

Srikant, V., E. J. Tarsa, David R. Clarke, & James S. Speck. (1995). Crystallographic orientation of epitaxial BaTiO3 films: The role of thermal-expansion mismatch with the substrate. Journal of Applied Physics. 77(4). 1517–1522. 74 indexed citations

14.

Tarsa, E. J., et al.. (1994). Common Themes in ther Epitaxial Growth of Oxides on Semiconductors. MRS Proceedings. 341. 21 indexed citations

15.

Tarsa, E. J., James S. Speck, & McD. Robinson. (1993). Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructures. Applied Physics Letters. 63(4). 539–541. 41 indexed citations

16.

Fork, D. K., J. J. Kingston, G. B. Anderson, E. J. Tarsa, & James S. Speck. (1993). Progress Toward Viable Epitaxial Oxide Ferroelectric Waveguide Heterostructures on Gaas. MRS Proceedings. 310. 4 indexed citations

17.

Tarsa, E. J., J. H. English, & James S. Speck. (1993). Pulsed laser deposition of oriented In2O3 on (001) InAs, MgO, and yttria-stabilized zirconia. Applied Physics Letters. 62(19). 2332–2334. 91 indexed citations

18.

Williams, Katherine, E. J. Tarsa, & James S. Speck. (1992). Growth of InAs on diamond (001) by molecular beam epitaxy. Applied Physics Letters. 61(4). 405–407. 1 indexed citations

19.

Sun, Jian, et al.. (1991). Electron channeling patterns of a-axis and c-axis YBa₂Cu₃O_7−δ thin films. Journal of materials research/Pratt's guide to venture capital sources. 6(12). 2501–2506. 5 indexed citations

20.

Tarsa, E. J., H. Kroemer, A. C. Gossard, et al.. (1990). Molecular beam epitaxial growth of InAs on a TlBaCaCuO superconducting film. Applied Physics Letters. 56(5). 490–492. 11 indexed citations

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