B. A. Haskell

3.6k total citations · 2 hit papers
45 papers, 3.0k citations indexed

About

B. A. Haskell is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, B. A. Haskell has authored 45 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Condensed Matter Physics, 20 papers in Electronic, Optical and Magnetic Materials and 19 papers in Materials Chemistry. Recurrent topics in B. A. Haskell's work include GaN-based semiconductor devices and materials (44 papers), Ga2O3 and related materials (20 papers) and ZnO doping and properties (19 papers). B. A. Haskell is often cited by papers focused on GaN-based semiconductor devices and materials (44 papers), Ga2O3 and related materials (20 papers) and ZnO doping and properties (19 papers). B. A. Haskell collaborates with scholars based in United States, Japan and Sweden. B. A. Haskell's co-authors include Shuji Nakamura, James S. Speck, Steven P. DenBaars, Feng Wu, P. Fini, Arpan Chakraborty, Umesh K. Mishra, Troy J. Baker, S. Keller and Shigefusa F. Chichibu and has published in prestigious journals such as Nature Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. A. Haskell

45 papers receiving 2.9k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

2006 553 citations Shigefusa F. Chichibu, Akira Uedono et al. Nature Materials profile →
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

2005 197 citations Rajat Sharma, P. Morgan Pattison et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
B. A. Haskell United States	26	2.8k	1.6k	1.3k	1.0k	813	45	3.0k
T. Paskova Sweden	31	2.7k 1.0×	1.8k 1.1×	1.6k 1.3×	976 0.9×	575 0.7×	207	3.4k
I. Gorczyca Poland	29	2.0k 0.7×	1.6k 1.0×	978 0.8×	998 1.0×	800 1.0×	113	3.0k
M. A. Sánchez-Garcı́a Spain	31	3.0k 1.1×	1.5k 1.0×	1.7k 1.3×	768 0.7×	528 0.6×	111	3.4k
Okhyun Nam South Korea	30	2.8k 1.0×	1.3k 0.9×	1.2k 0.9×	1.1k 1.1×	744 0.9×	148	3.2k
S. Figge Germany	22	2.1k 0.7×	1.2k 0.8×	1.0k 0.8×	655 0.6×	674 0.8×	115	2.4k
M. L. Nakarmi United States	29	2.9k 1.0×	1.6k 1.0×	1.9k 1.5×	599 0.6×	634 0.8×	63	3.4k
M. Laügt France	27	1.8k 0.6×	1.3k 0.8×	1.2k 0.9×	749 0.7×	426 0.5×	67	2.5k
D. T. Olson United States	21	3.0k 1.1×	1.2k 0.8×	1.4k 1.1×	981 0.9×	637 0.8×	30	3.4k
H. Teisseyre Poland	24	2.1k 0.7×	1.2k 0.8×	1.1k 0.9×	750 0.7×	567 0.7×	103	2.5k
Tsvetanka Zheleva United States	25	2.0k 0.7×	1.4k 0.9×	1.0k 0.8×	669 0.6×	891 1.1×	73	2.9k

Countries citing papers authored by B. A. Haskell

Since Specialization

Citations

This map shows the geographic impact of B. A. Haskell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. A. Haskell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. A. Haskell more than expected).

Fields of papers citing papers by B. A. Haskell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. A. Haskell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. A. Haskell. The network helps show where B. A. Haskell may publish in the future.

Co-authorship network of co-authors of B. A. Haskell

This figure shows the co-authorship network connecting the top 25 collaborators of B. A. Haskell. A scholar is included among the top collaborators of B. A. Haskell based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. A. Haskell. B. A. Haskell is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Yu, Edward T., B. A. Haskell, P. Fini, et al.. (2008). Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy. Journal of Applied Physics. 103(1). 6 indexed citations

Barabash, Rozaliya, et al.. (2008). White X‐ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film. physica status solidi (b). 245(5). 899–902. 2 indexed citations

Chichibu, Shigefusa F., Akira Uedono, Takeyoshi Onuma, et al.. (2007). Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 87(13). 2019–2039. 26 indexed citations

Onuma, Takeyoshi, T. Koyama, A. Chakraborty, et al.. (2007). Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(4). 1524–1528. 21 indexed citations

Haskell, B. A., Melvin McLaurin, Feng Wu, et al.. (2007). Defect-mediated surface morphology of nonpolar m-plane GaN. Applied Physics Letters. 90(12). 27 indexed citations

Chichibu, Shigefusa F., Akira Uedono, Takeyoshi Onuma, et al.. (2006). Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature Materials. 5(10). 810–816. 553 indexed citations breakdown →

Paskova, T., R. Schifano, T. Malinauskas, et al.. (2006). Photoluminescence of a ‐plane GaN: comparison between MOCVD and HVPE grown layers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 1499–1502. 7 indexed citations

Wu, Yuan, B. A. Haskell, Scott Newman, et al.. (2006). Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy. Journal of Crystal Growth. 297(2). 321–325. 27 indexed citations

Koyama, T., Takeyoshi Onuma, Hisashi Masui, et al.. (2006). Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates. Applied Physics Letters. 89(9). 62 indexed citations

10.

Haskell, B. A.. (2005). Structure of nonpolar gallium nitride films grown by hydride vapor phase epitaxy. PhDT. 2 indexed citations

11.

Sharma, Rajat, P. Morgan Pattison, Hisashi Masui, et al.. (2005). Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode. Applied Physics Letters. 87(23). 1 indexed citations

12.

Haskell, B. A., Troy J. Baker, Melvin McLaurin, et al.. (2005). Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy. Applied Physics Letters. 86(11). 165 indexed citations

13.

Chakraborty, Arpan, S. Keller, C. Meier, et al.. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters. 86(3). 68 indexed citations

14.

Sharma, Rajat, P. Morgan Pattison, Troy J. Baker, et al.. (2005). A semipolar (10-1-3) InGaN/GaN green light emitting diode. MRS Proceedings. 892. 1 indexed citations

15.

Haskell, B. A., Arpan Chakraborty, Feng Wu, et al.. (2005). Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy. Journal of Electronic Materials. 34(4). 357–360. 84 indexed citations

16.

Chichibu, Shigefusa F., Akira Uedono, Takeyoshi Onuma, et al.. (2005). Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques. Applied Physics Letters. 86(2). 131 indexed citations

17.

Sharma, Rajat, P. Morgan Pattison, Hisashi Masui, et al.. (2005). Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode. Applied Physics Letters. 87(23). 197 indexed citations breakdown →

18.

Garrett, Gregory A., H. Shen, Michael Wraback, et al.. (2005). Intensity dependent time‐resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a‐plane and planar c‐plane GaN. physica status solidi (a). 202(5). 846–849. 9 indexed citations

19.

Chakraborty, Arpan, B. A. Haskell, S. Keller, et al.. (2004). Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak. Applied Physics Letters. 85(22). 5143–5145. 180 indexed citations

20.

Hashimoto, Tadao, Kenji Fujito, B. A. Haskell, et al.. (2004). Growth of gallium nitride via fluid transport in supercritical ammonia. Journal of Crystal Growth. 275(1-2). e525–e530. 38 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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