B. A. Haskell

3.6k citations

45 papers · 3.0k indexed · 2 hit papers · h-index 26

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 44
- GaN-based semiconductor devices and materials 44
Electronic, Optical and Magnetic Materials 20
- Ga2O3 and related materials 20

Co-authors: Shuji Nakamura (40 shared papers)James S. Speck (42 shared papers)Steven P. DenBaars (29 shared papers)Feng Wu (14 shared papers)P. Fini (19 shared papers)Arpan Chakraborty (10 shared papers)Umesh K. Mishra (13 shared papers)Troy J. Baker (8 shared papers)
Journals: Applied Physics Letters (12 papers)Japanese Journal of Applied Physics (9 papers)Journal of Applied Physics (3 papers)Journal of Crystal Growth (3 papers)physica status solidi (b) (2 papers)
Partner nations: United States Japan Sweden

In The Last Decade

B. A. Haskell

45 papers receiving 2.9k citations

Hit Papers

align trajectories log scale

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors 2006 · 553 citations

Peers

Countries citing papers authored by B. A. Haskell

Since Specialization

Citations

This map shows the geographic impact of B. A. Haskell's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. A. Haskell with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. A. Haskell more than expected).

Fields of papers citing papers by B. A. Haskell

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. A. Haskell. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. A. Haskell. The network helps show where B. A. Haskell may publish in the future.

Co-authors

The 25 scholars most cited alongside B. A. Haskell, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. A. Haskell Line = papers co-authored together B. A. Haskell links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 45 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Nature Materials ·Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, B. A. Haskell, Arpan Chakraborty, Takahiro Koyama, P. Fini, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra, Shuji Nakamura, Shigeo Yamaguchi, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Jung Han, Takayuki Sota Hit paper breakdown →	2006	553
2	Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode Applied Physics Letters ·Rajat Sharma, P. Morgan Pattison, Hisashi Masui, Robert M. Farrell, Troy J. Baker, B. A. Haskell, Feng Wu, Steven P. DenBaars, James S. Speck, Shuji Nakamura Hit paper breakdown →	2005	197
3	Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates Japanese Journal of Applied Physics ·Arpan Chakraborty, B. A. Haskell, S. Keller, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra	2005	183
4	Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak Applied Physics Letters ·Arpan Chakraborty, B. A. Haskell, S. Keller, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra	2004	180
5	Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates Japanese Journal of Applied Physics ·Troy J. Baker, B. A. Haskell, Feng Wu, James S. Speck, Shuji Nakamura	2006	176
6	Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy Applied Physics Letters ·B. A. Haskell, Troy J. Baker, Melvin McLaurin, Feng Wu, P. Fini, Steven P. DenBaars, James S. Speck, Shuji Nakamura	2005	165
7	Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy Applied Physics Letters ·B. A. Haskell, Feng Wu, Michael D. Craven, Shigeaki Matsuda, P. Fini, Tetsuo Fujii, K. Fujito, Steven P. DenBaars, James S. Speck, Shuji Nakamura	2003	146
8	Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates Japanese Journal of Applied Physics ·Troy J. Baker, B. A. Haskell, Feng Wu, P. Fini, James S. Speck, Shuji Nakamura	2005	140
9	Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques Applied Physics Letters ·Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, T. Sota, B. A. Haskell, Steven P. DenBaars, James S. Speck, Shuji Nakamura	2005	131
10	Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy Applied Physics Letters ·B. A. Haskell, Feng Wu, Shigeaki Matsuda, Michael D. Craven, P. Fini, Steven P. DenBaars, James S. Speck, Shuji Nakamura	2003	131
11	Anisotropic strain and phonon deformation potentials in GaN Physical Review B ·Vanya Darakchieva, T. Paskova, M. Schubert, Hans Arwin, B. Ḿonemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. A. Haskell, P. Fini, James S. Speck, Shuji Nakamura	2007	90
12	Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy Journal of Electronic Materials ·B. A. Haskell, Arpan Chakraborty, Feng Wu, Hideo Sasano, P. Fini, Steven P. DenBaars, James S. Speck, Shuji Nakamura	2005	84
13	Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates Japanese Journal of Applied Physics ·Arpan Chakraborty, Troy J. Baker, B. A. Haskell, Feng Wu, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra	2005	84
14	Progress in the growth of nonpolar gallium nitride physica status solidi (b) ·B. A. Haskell, Shuji Nakamura, Steven P. DenBaars, James S. Speck	2007	69
15	Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN Applied Physics Letters ·Arpan Chakraborty, S. Keller, C. Meier, B. A. Haskell, S. Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck, Umesh K. Mishra	2005	68
16	Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates Applied Physics Letters ·T. Koyama, Takeyoshi Onuma, Hisashi Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, James S. Speck, Shuji Nakamura, Steven P. DenBaars, T. Sota, Shigefusa F. Chichibu	2006	62
17	Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate Japanese Journal of Applied Physics ·Hisashi Masui, Arpan Chakraborty, B. A. Haskell, Umesh K. Mishra, James S. Speck, Shuji Nakamura, Steven P. DenBaars	2005	62
18	Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates Journal of Applied Physics ·C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, T. Paskova, B. Monemar, U. Behn, B. A. Haskell, P. Fini, Shuji Nakamura	2006	60
19	Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation Japanese Journal of Applied Physics ·Arpan Chakraborty, B. A. Haskell, Hisashi Masui, S. Keller, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra	2006	58
20	Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Applied Physics Letters ·Takeyoshi Onuma, A. Chakraborty, B. A. Haskell, S. Keller, Steven P. DenBaars, James S. Speck, Shuji Nakamura, Umesh K. Mishra, T. Sota, Shigefusa F. Chichibu	2005	49

About B. A. Haskell

B. A. Haskell is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Mechanics of Materials and Atomic and Molecular Physics, and Optics, having authored 45 papers that have together received 3.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (44 papers), Ga2O3 and related materials (20 papers), ZnO doping and properties (19 papers), Metal and Thin Film Mechanics (17 papers), Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and devices (9 papers), Acoustic Wave Resonator Technologies (3 papers) and Photocathodes and Microchannel Plates (3 papers). The work is most often cited by research in Condensed Matter Physics (2.8k citations), Electronic, Optical and Magnetic Materials (1.3k citations), Materials Chemistry (1.6k citations), Atomic and Molecular Physics, and Optics (1.0k citations) and Mechanics of Materials (813 citations). B. A. Haskell has collaborated with scholars based in United States, Japan and Sweden. Frequent co-authors include Shuji Nakamura, James S. Speck, Steven P. DenBaars, Feng Wu, P. Fini, Arpan Chakraborty, Umesh K. Mishra, Troy J. Baker, S. Keller and Shigefusa F. Chichibu. Their work appears in journals such as Applied Physics Letters, Japanese Journal of Applied Physics, Journal of Applied Physics, Journal of Crystal Growth and physica status solidi (b).

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