M. Hansen

615 total citations
21 papers, 505 citations indexed

About

M. Hansen is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, M. Hansen has authored 21 papers receiving a total of 505 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Condensed Matter Physics, 12 papers in Atomic and Molecular Physics, and Optics and 11 papers in Electrical and Electronic Engineering. Recurrent topics in M. Hansen's work include GaN-based semiconductor devices and materials (14 papers), Semiconductor Quantum Structures and Devices (11 papers) and Semiconductor materials and devices (6 papers). M. Hansen is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), Semiconductor Quantum Structures and Devices (11 papers) and Semiconductor materials and devices (6 papers). M. Hansen collaborates with scholars based in United States, Poland and France. M. Hansen's co-authors include Steven P. DenBaars, James S. Speck, Umesh K. Mishra, Steven A. Ringel, A. Hierro, Daewon Kwon, Brendan Moran, Lingyan Zhao, P. Fini and H. Marchand and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Crystal Growth.

In The Last Decade

M. Hansen

20 papers receiving 491 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Hansen United States	12	410	261	205	176	149	21	505
R. C. Tu Taiwan	11	312 0.8×	168 0.6×	179 0.9×	142 0.8×	222 1.5×	30	424
U.H. Liaw Taiwan	9	327 0.8×	229 0.9×	149 0.7×	174 1.0×	217 1.5×	19	472
J.W. Graff United States	12	345 0.8×	217 0.8×	167 0.8×	157 0.9×	151 1.0×	25	442
M. Hansen United States	10	372 0.9×	207 0.8×	159 0.8×	145 0.8×	116 0.8×	14	408
Munehiro Kato Japan	9	447 1.1×	202 0.8×	217 1.1×	176 1.0×	323 2.2×	14	577
D. A. Stocker United States	8	359 0.9×	160 0.6×	103 0.5×	169 1.0×	191 1.3×	11	393
B. Schineller Germany	14	497 1.2×	307 1.2×	279 1.4×	233 1.3×	252 1.7×	72	640
H. M. Lo Taiwan	10	426 1.0×	197 0.8×	160 0.8×	151 0.9×	269 1.8×	16	480
Seong-Ran Jeon South Korea	12	455 1.1×	224 0.9×	197 1.0×	196 1.1×	256 1.7×	31	567
H. Jönen Germany	14	462 1.1×	144 0.6×	253 1.2×	202 1.1×	215 1.4×	24	522

Countries citing papers authored by M. Hansen

Since Specialization

Citations

This map shows the geographic impact of M. Hansen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Hansen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Hansen more than expected).

Fields of papers citing papers by M. Hansen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Hansen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Hansen. The network helps show where M. Hansen may publish in the future.

Co-authorship network of co-authors of M. Hansen

This figure shows the co-authorship network connecting the top 25 collaborators of M. Hansen. A scholar is included among the top collaborators of M. Hansen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Hansen. M. Hansen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hansen, M., P. Fini, Michael D. Craven, et al.. (2002). Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN. Journal of Crystal Growth. 234(4). 623–630. 17 indexed citations

Mack, M., D. K. Young, A. Abare, et al.. (2002). Observation of near field modal emission in InGaN multi-quantum well laser diodes by near field scanning optical microscopy. 251. 9–10.

Parish, Giacinta, M. Hansen, Brendan Moran, et al.. (2002). AlGaN/GaN solar-blind ultraviolet photodiodes on SiC substrate. 5s1. 215–224. 1 indexed citations

Perlin, P., I. Gorczyca, T. Suski, et al.. (2001). Influence of pressure on the optical properties ofInxGa1−xNepilayers and quantum structures. Physical review. B, Condensed matter. 64(11). 61 indexed citations

Hansen, M., et al.. (2001). Observation of Mg-Rich Precipitates in the p-Type Doping of GaN-Based Laser Diodes. physica status solidi (b). 228(2). 353–356. 11 indexed citations

Hierro, A., M. Hansen, Lingyan Zhao, et al.. (2001). Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN. physica status solidi (b). 228(3). 937–946. 21 indexed citations

Hierro, A., Aaron R. Arehart, B. Heying, et al.. (2001). Capture Kinetics of Electron Traps in MBE-Grown n-GaN. physica status solidi (b). 228(1). 309–313. 48 indexed citations

Parish, Giacinta, M. Hansen, Brendan Moran, et al.. (2001). Solar-Blind p-GaN/i-AlGaN/n-AlGaN Ultraviolet Photodiodes on SiC Substrate. physica status solidi (a). 188(1). 297–300. 12 indexed citations

Moran, Brendan, M. Hansen, Michael D. Craven, James S. Speck, & Steven P. DenBaars. (2000). Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates. Journal of Crystal Growth. 221(1-4). 301–304. 10 indexed citations

10.

Perlin, P., T. Suski, P. Wiśniewski, et al.. (2000). Universal behavior of the pressure coefficient of the light absorption and emission in InGaN structures. MRS Proceedings. 639. 1 indexed citations

11.

Hierro, A., Daewon Kwon, Steven A. Ringel, et al.. (2000). Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes. Applied Physics Letters. 76(21). 3064–3066. 121 indexed citations

12.

Haberer, Elaine D., M. Woods, S. Keller, et al.. (2000). Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe. MRS Proceedings. 639. 3 indexed citations

13.

Young, D. K., M. Mack, A. Abare, et al.. (1999). Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes. Applied Physics Letters. 74(16). 2349–2351. 23 indexed citations

14.

Fini, P., Lingyan Zhao, Brendan Moran, et al.. (1999). High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers. Applied Physics Letters. 75(12). 1706–1708. 93 indexed citations

15.

Abare, A., M. Hansen, James S. Speck, Steven P. DenBaars, & L. A. Coldren. (1999). Electrically pumped distributed feedback nitridelasers employing embeddeddielectric gratings. Electronics Letters. 35(18). 1559–1560. 14 indexed citations

16.

Mack, M., G. D. Via, A. Abare, et al.. (1998). Improvement of GaN-based laser diode facets by FIBpolishing. Electronics Letters. 34(13). 1315–1316. 22 indexed citations

17.

Hansen, M., et al.. (1995). Digital free-space optical interconnections: a comparison of transmitter technologies. Applied Optics. 34(17). 3103–3103. 35 indexed citations

18.

Hansen, M., et al.. (1994). Integration of InAlGaAs/InGaAs MODFETs on MQW modulatorson GaAs substrates. Electronics Letters. 30(20). 1713–1714. 1 indexed citations

19.

Hansen, M., et al.. (1993). Quantum-confined Stark effect modulators at 1.06 mu m on GaAs. IEEE Photonics Technology Letters. 5(12). 1383–1385. 9 indexed citations

20.

Hansen, M., et al.. (1992). Quaternary Alloys In_xAl_yGa_1−x-yAs Grown on GaAs with A Compositionally-Step-Graded Buffer. MRS Proceedings. 263. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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