E. Haus

1.3k citations

11 papers · 1.1k indexed · h-index 9

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 11
- GaN-based semiconductor devices and materials 11
Electronic, Optical and Magnetic Materials 8
- Ga2O3 and related materials 8

Co-authors: James S. Speck B. Heying Umesh K. Mishra R. Averbeck H. Riechert P. Fini I. P. Smorchkova Steven P. DenBaars
Journals: Journal of Applied Physics (4 papers)Applied Physics Letters (2 papers)Journal of Crystal Growth (1 paper)MRS Internet Journal of Nitride Semiconductor Research (1 paper)Japanese Journal of Applied Physics (1 paper)
Partner nations: United States Germany France

In The Last Decade

E. Haus

10 papers receiving 1.1k citations

Peers

Countries citing papers authored by E. Haus

Since Specialization

Citations

This map shows the geographic impact of E. Haus's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Haus with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Haus more than expected).

Fields of papers citing papers by E. Haus

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Haus. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Haus. The network helps show where E. Haus may publish in the future.

Co-authorship network

The 24 scholars most cited alongside E. Haus, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Haus Line = papers co-authored together E. Haus links everyone, so they are left out of the graph.

All Works

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11 of 11 papers shown

#	Work
1	Polarity control during molecular beam epitaxy growth of Mg-doped GaN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·윤상남, E. Haus, Feng Wu, Frank J. Bunn, Umesh K. Mishra, James S. Speck	2003	39
2	The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy Journal of Crystal Growth ·E. Haus, I. P. Smorchkova, B. Heying, P. Fini, C. Poblenz, Tom Mates, Umesh K. Mishra, James S. Speck	2002	26
3	Electrical transport of an AlGaN/GaN two-dimensional electron gas MRS Internet Journal of Nitride Semiconductor Research ·A. Saxler, P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, Steven P. DenBaars, Umesh K. Mishra, James S. Speck	2000	1
4	Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure Journal of Applied Physics ·S. Elhamri, A. Saxler, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, Steven P. DenBaars, Umesh K. Mishra, James S. Speck	2000	17
5	Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy Journal of Applied Physics ·B. Heying, R. Averbeck, Chao-Hhua Liang, E. Haus, H. Riechert, James S. Speck	2000	402
6	Characterization of an AlGaN/GaN two-dimensional electron gas structure Journal of Applied Physics ·A. Saxler, P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, Steven P. DenBaars, Umesh K. Mishra, James S. Speck	2000	54
7	Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy Japanese Journal of Applied Physics ·C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. D. Maranowski, Pierre M. Petroff, Steven P. DenBaars, Umesh K. Mishra, James S. Speck, A. Saxler, S. Elhamri, W. C. Mitchel	2000	10
8	Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters ·I. P. Smorchkova, E. Haus, B. Heying, P. Kozodoy, P. Fini, J. P. Ibbetson, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2000	110
9	Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy Journal of Applied Physics ·I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	1999	364
10	Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas MRS Proceedings ·A. Saxler, P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, Steven P. DenBaars, Umesh K. Mishra, James S. Speck	1999	0
11	High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy Applied Physics Letters ·C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, K. D. Maranowski, J. P. Ibbetson, S. Keller, P. M. Petroff, Steven P. DenBaars, Umesh K. Mishra, James S. Speck	1999	79

About E. Haus

E. Haus is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Atomic and Molecular Physics, and Optics and Mechanics of Materials, having authored 11 papers that have together received 1.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (11 papers), Ga2O3 and related materials (8 papers), ZnO doping and properties (8 papers), Quantum and electron transport phenomena (2 papers), Semiconductor Quantum Structures and Devices (2 papers) and Metal and Thin Film Mechanics (2 papers). The work is most often cited by research in Condensed Matter Physics (1.0k citations), Electronic, Optical and Magnetic Materials (551 citations), Atomic and Molecular Physics, and Optics (329 citations), Materials Chemistry (480 citations) and Mechanics of Materials (183 citations). E. Haus has collaborated with scholars based in United States, Germany and France. Frequent co-authors include James S. Speck, B. Heying, Umesh K. Mishra, R. Averbeck, H. Riechert, P. Fini, I. P. Smorchkova, Steven P. DenBaars, J. P. Ibbetson and C. R. Elsass. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Journal of Crystal Growth, MRS Internet Journal of Nitride Semiconductor Research and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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