Tom Mates

1.7k total citations
39 papers, 1.4k citations indexed

About

Tom Mates is a scholar working on Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Tom Mates has authored 39 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Condensed Matter Physics, 20 papers in Materials Chemistry and 18 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Tom Mates's work include GaN-based semiconductor devices and materials (23 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (16 papers). Tom Mates is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (16 papers). Tom Mates collaborates with scholars based in United States, Japan and China. Tom Mates's co-authors include James S. Speck, Umesh K. Mishra, Steven P. DenBaars, S. Keller, Jason Seifter, Jacek J. Jasieniak, Alan J. Heeger, Jang Jo, Yuichi Oshima and Elaheh Ahmadi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Functional Materials.

In The Last Decade

Tom Mates

39 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tom Mates United States 18 776 686 670 640 222 39 1.4k
Guohao Yu China 20 615 0.8× 761 1.1× 986 1.5× 922 1.4× 105 0.5× 104 1.6k
Emre Gür Türkiye 22 914 1.2× 406 0.6× 317 0.5× 753 1.2× 167 0.8× 95 1.4k
Ilan Shalish Israel 18 1.2k 1.5× 708 1.0× 429 0.6× 896 1.4× 107 0.5× 46 1.6k
Mark E. White United States 25 990 1.3× 476 0.7× 225 0.3× 774 1.2× 222 1.0× 47 1.4k
Yongdan Hu United States 8 955 1.2× 436 0.6× 399 0.6× 483 0.8× 70 0.3× 12 1.3k
B. Claflin United States 21 1.7k 2.3× 961 1.4× 399 0.6× 1.5k 2.3× 204 0.9× 86 2.3k
S. Shokhovets Germany 22 414 0.5× 246 0.4× 481 0.7× 580 0.9× 175 0.8× 55 1.0k
YewChung Sermon Wu Taiwan 18 644 0.8× 239 0.3× 468 0.7× 801 1.3× 123 0.6× 120 1.3k
K. P. Rajeev India 20 762 1.0× 885 1.3× 669 1.0× 165 0.3× 201 0.9× 50 1.3k
Shou‐Yi Kuo Taiwan 21 1.3k 1.6× 394 0.6× 270 0.4× 1.1k 1.7× 82 0.4× 104 1.6k

Countries citing papers authored by Tom Mates

Since Specialization
Citations

This map shows the geographic impact of Tom Mates's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tom Mates with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tom Mates more than expected).

Fields of papers citing papers by Tom Mates

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tom Mates. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tom Mates. The network helps show where Tom Mates may publish in the future.

Co-authorship network of co-authors of Tom Mates

This figure shows the co-authorship network connecting the top 25 collaborators of Tom Mates. A scholar is included among the top collaborators of Tom Mates based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tom Mates. Tom Mates is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Peterson, Carl, et al.. (2024). 200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β -Ga2O3 epitaxial drift layers. Applied Physics Letters. 125(18). 12 indexed citations
2.
3.
Mates, Tom, et al.. (2022). Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition. Applied Physics Letters. 120(10). 5 indexed citations
4.
5.
Fernandez‐Delgado, Olivia, Edison Castro, Carolina R. Ganivet, et al.. (2019). Variation of Interfacial Interactions in PC61BM-like Electron-Transporting Compounds for Perovskite Solar Cells. ACS Applied Materials & Interfaces. 11(37). 34408–34415. 35 indexed citations
6.
Mauze, Akhil, Yuewei Zhang, Tom Mates, Feng Wu, & James S. Speck. (2019). Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 115(5). 36 indexed citations
7.
Malkowski, Thomas F., Tom Mates, Hamad Albrithen, et al.. (2018). Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal. Journal of Crystal Growth. 508. 50–57. 14 indexed citations
8.
Mauze, Akhil, et al.. (2018). n-type dopants in (001)β-Ga2O3grown on (001)β-Ga2O3substrates by plasma-assisted molecular beam epitaxy. Semiconductor Science and Technology. 33(4). 45001–45001. 55 indexed citations
9.
Lheureux, Guillaume, et al.. (2018). High germanium doping of GaN films by ammonia molecular beam epitaxy. Journal of Crystal Growth. 508. 19–23. 19 indexed citations
10.
Agarwal, Anchal, Chirag Gupta, Abdullah I. Alhassan, et al.. (2017). Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition. Applied Physics Express. 10(11). 111002–111002. 5 indexed citations
11.
Ahmadi, Elaheh, Onur S. Koksaldi, Xun Zheng, et al.. (2017). Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy. Applied Physics Express. 10(7). 71101–71101. 166 indexed citations
12.
Chan, Silvia H., Davide Bisi, Chirag Gupta, et al.. (2016). Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices. Japanese Journal of Applied Physics. 55(2). 21501–21501. 19 indexed citations
13.
Mazumder, B., et al.. (2013). Characterization of a dielectric/GaN system using atom probe tomography. Applied Physics Letters. 103(15). 7 indexed citations
14.
Fichtenbaum, N., Tom Mates, S. Keller, Steven P. DenBaars, & Umesh K. Mishra. (2008). Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition. Journal of Crystal Growth. 310(6). 1124–1131. 154 indexed citations
15.
Imer, Bilge, Siddharth Rajan, Feng Wu, et al.. (2008). Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO). physica status solidi (a). 205(7). 1705–1712. 6 indexed citations
16.
Bronstein, Lyudmila M., Anna Ivanovskaya, Tom Mates, Niels Holten‐Andersen, & Galen D. Stucky. (2008). Bioinspired Gradient Materials via Blending of Polymer Electrolytes and Applying Electric Forces. The Journal of Physical Chemistry B. 113(3). 647–655. 14 indexed citations
17.
McLaurin, Melvin, Tom Mates, Feng Wu, & James S. Speck. (2006). Growth of p-type and n-type m-plane GaN by molecular beam epitaxy. Journal of Applied Physics. 100(6). 47 indexed citations
18.
Kaeding, John F., Hitoshi Sato, Michael Iza, et al.. (2006). Realization of high hole concentrations in Mg doped semipolar (101¯1¯) GaN. Applied Physics Letters. 89(20). 12 indexed citations
19.
Moe, Craig, Hisashi Masui, Mathew C. Schmidt, et al.. (2005). Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide. Japanese Journal of Applied Physics. 44(4L). L502–L502. 21 indexed citations
20.
Elsass, C. R., Tom Mates, B. Heying, et al.. (2000). Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy. Applied Physics Letters. 77(20). 3167–3169. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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