B. Heying

5.5k total citations · 1 hit paper
49 papers, 4.7k citations indexed

About

B. Heying is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, B. Heying has authored 49 papers receiving a total of 4.7k indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Condensed Matter Physics, 26 papers in Electrical and Electronic Engineering and 22 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in B. Heying's work include GaN-based semiconductor devices and materials (48 papers), Ga2O3 and related materials (22 papers) and ZnO doping and properties (18 papers). B. Heying is often cited by papers focused on GaN-based semiconductor devices and materials (48 papers), Ga2O3 and related materials (22 papers) and ZnO doping and properties (18 papers). B. Heying collaborates with scholars based in United States, Sweden and Germany. B. Heying's co-authors include James S. Speck, Steven P. DenBaars, P. Fini, S. Keller, Umesh K. Mishra, B.P. Keller, D. Kapolnek, E. J. Tarsa, C. R. Elsass and Xuemei Wu and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. Heying

48 papers receiving 4.5k citations

Hit Papers

Role of threading dislocation structure on the x-ray diff... 1996 2026 2006 2016 1996 200 400 600
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
    1996 732 citations B. Heying, Xuemei Wu et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Heying United States 26 4.3k 2.2k 2.1k 1.8k 1.2k 49 4.7k
J. N. Kuznia United States 29 3.9k 0.9× 1.9k 0.9× 1.5k 0.7× 2.0k 1.1× 1.3k 1.1× 51 4.3k
J. P. Ibbetson United States 27 3.8k 0.9× 2.0k 0.9× 1.7k 0.8× 2.4k 1.3× 1.9k 1.6× 76 4.9k
M. Leroux France 38 3.4k 0.8× 1.8k 0.8× 1.9k 0.9× 1.8k 1.0× 2.2k 1.8× 189 4.8k
M. D. Bremser United States 30 3.6k 0.8× 1.6k 0.8× 1.8k 0.8× 1.6k 0.9× 919 0.8× 76 4.0k
D. J. As Germany 34 2.7k 0.6× 1.3k 0.6× 1.5k 0.7× 1.5k 0.8× 1.6k 1.4× 236 3.6k
T. Sota Japan 40 4.2k 1.0× 2.0k 0.9× 2.5k 1.2× 1.4k 0.7× 2.5k 2.1× 93 5.3k
A. Knauer Germany 36 3.3k 0.8× 2.0k 0.9× 1.5k 0.7× 1.7k 0.9× 989 0.8× 189 4.2k
D. T. Olson United States 21 3.0k 0.7× 1.4k 0.7× 1.2k 0.6× 1.5k 0.8× 981 0.8× 30 3.4k
Kenji Fujito Japan 37 3.6k 0.8× 1.3k 0.6× 1.6k 0.8× 1.1k 0.6× 1.8k 1.5× 82 3.9k
P. Kozodoy United States 30 3.6k 0.8× 1.8k 0.8× 1.4k 0.7× 2.0k 1.1× 1.3k 1.1× 60 4.2k

Countries citing papers authored by B. Heying

Since Specialization
Citations

This map shows the geographic impact of B. Heying's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Heying with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Heying more than expected).

Fields of papers citing papers by B. Heying

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Heying. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Heying. The network helps show where B. Heying may publish in the future.

Co-authorship network of co-authors of B. Heying

This figure shows the co-authorship network connecting the top 25 collaborators of B. Heying. A scholar is included among the top collaborators of B. Heying based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Heying. B. Heying is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sandhu, Rajinder, Vincent Gambin, Ioulia Smorchkova, et al.. (2013). GaN HEMT Near Junction Heat Removal. 5 indexed citations
2.
Heying, B., et al.. (2010). Reliable GaN HEMTS for high frequency applications. 2010 IEEE MTT-S International Microwave Symposium. 1218–1221. 18 indexed citations
3.
Deal, W.R., Daisuke Yamauchi, Ioulia Smorchkova, et al.. (2009). Design and analysis of ultra wideband GaN dual-gate HEMT low noise amplifiers. 14. 669–672. 13 indexed citations
4.
Deal, W.R., et al.. (2007). Broadband GaN Dual-Gate HEMT Low Noise Amplifier. 1–4. 26 indexed citations
5.
Coffie, R., Ioulia Smorchkova, M. Wójtowicz, et al.. (2006). Impact of A1N Interalayer on Reliability of AlGaN/GaN HEMTS. 99–102. 9 indexed citations
6.
Lan, Xing, M. Wójtowicz, Ioulia Smorchkova, et al.. (2006). A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO. IEEE Microwave and Wireless Components Letters. 16(7). 425–427. 16 indexed citations
7.
Poblenz, C., Patrick Waltereit, Siddharth Rajan, et al.. (2005). Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(4). 1562–1567. 47 indexed citations
8.
Hansen, M., P. Fini, Michael D. Craven, et al.. (2002). Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN. Journal of Crystal Growth. 234(4). 623–630. 17 indexed citations
9.
Davis, R. F., A. M. Roskowski, Edward A. Preble, et al.. (2002). Gallium nitride materials - progress, status, and potential roadblocks. Proceedings of the IEEE. 90(6). 993–1005. 31 indexed citations
10.
Heikman, S., et al.. (2002). Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence. 4. 371–376. 1 indexed citations
11.
Hierro, A., Aaron R. Arehart, B. Heying, et al.. (2002). Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters. 80(5). 805–807. 53 indexed citations
12.
Ding, Yun, et al.. (2001). Characterization of Individual Threading Dislocations in GaN Using Ballistic Electron Emission Microscopy. Physical Review Letters. 87(10). 106802–106802. 25 indexed citations
13.
Yu, Edward T., et al.. (2001). Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy. Applied Physics Letters. 79(17). 2749–2751. 5 indexed citations
14.
Elsass, C. R., C. Poblenz, B. Heying, et al.. (2001). Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth. 233(4). 709–716. 16 indexed citations
15.
Saxler, A., P. Debray, R. Perrin, et al.. (2000). Electrical transport of an AlGaN/GaN two-dimensional electron gas. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 619–625. 1 indexed citations
16.
Elsass, C. R., Tom Mates, B. Heying, et al.. (2000). Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy. Applied Physics Letters. 77(20). 3167–3169. 46 indexed citations
17.
Elhamri, S., A. Saxler, W. C. Mitchel, et al.. (2000). Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure. Journal of Applied Physics. 88(11). 6583–6588. 17 indexed citations
18.
Smorchkova, I. P., C. R. Elsass, J. P. Ibbetson, et al.. (1999). Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy. Journal of Applied Physics. 86(8). 4520–4526. 364 indexed citations
19.
Tarsa, E. J., B. Heying, Xuemei Wu, et al.. (1997). Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy. Journal of Applied Physics. 82(11). 5472–5479. 343 indexed citations
20.
Heying, B., Xuemei Wu, S. Keller, et al.. (1996). Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films. Applied Physics Letters. 68(5). 643–645. 732 indexed citations breakdown →

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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