C. R. Elsass

2.2k total citations
23 papers, 1.9k citations indexed

About

C. R. Elsass is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, C. R. Elsass has authored 23 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 18 papers in Electronic, Optical and Magnetic Materials and 14 papers in Materials Chemistry. Recurrent topics in C. R. Elsass's work include GaN-based semiconductor devices and materials (23 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (14 papers). C. R. Elsass is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (14 papers). C. R. Elsass collaborates with scholars based in United States, Israel and France. C. R. Elsass's co-authors include James S. Speck, Steven P. DenBaars, B. Heying, P. Fini, Umesh K. Mishra, I. P. Smorchkova, S. Keller, P. M. Petroff, J. P. Ibbetson and E. J. Tarsa and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

C. R. Elsass

22 papers receiving 1.8k citations

Peers

C. R. Elsass

CMP

EOMM

EEE

AMPO

Yoshihiko Toyoda Japan

Shuji Nakamura Shuji Nakamura Japan

R. Averbeck Germany

V. V. Emtsev Russia

C. Poblenz United States

A. A. Klochikhin Russia

J. Off Germany

A. Usikov Russia

M. S. Minsky United States

B. El Jani Tunisia

Yoshihiko Toyoda Japan

C. R. Elsass

1.5k ×0.9

CMP

785 ×0.9

EOMM

918 ×1.2

682 ×1.0

EEE

551 ×0.9

AMPO

Citations per year, relative to C. R. Elsass C. R. Elsass (= 1×) peers Yoshihiko Toyoda

Countries citing papers authored by C. R. Elsass

Since Specialization

Citations

This map shows the geographic impact of C. R. Elsass's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. R. Elsass with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. R. Elsass more than expected).

Fields of papers citing papers by C. R. Elsass

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. R. Elsass. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. R. Elsass. The network helps show where C. R. Elsass may publish in the future.

Co-authorship network of co-authors of C. R. Elsass

This figure shows the co-authorship network connecting the top 25 collaborators of C. R. Elsass. A scholar is included among the top collaborators of C. R. Elsass based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. R. Elsass. C. R. Elsass is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Akopian, N., Alon Vardi, G. Bahir, et al.. (2009). Fermi edge singularity observed in GaN/AlGaN heterointerfaces. Applied Physics Letters. 94(22). 7 indexed citations

Elhamri, S., A. Saxler, W. C. Mitchel, et al.. (2003). Study of deleterious aging effects in GaN/AlGaN heterostructures. Journal of Applied Physics. 93(2). 1079–1082. 4 indexed citations

Miller, Eric J, D. M. Schaadt, Edward T. Yu, et al.. (2002). Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope. Journal of Applied Physics. 91(12). 9821–9826. 83 indexed citations

Miller, Eric J, Edward T. Yu, C. Poblenz, C. R. Elsass, & James S. Speck. (2002). Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling. Applied Physics Letters. 80(19). 3551–3553. 42 indexed citations

Yu, Edward T., et al.. (2001). Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy. Applied Physics Letters. 79(17). 2749–2751. 5 indexed citations

Elsass, C. R., C. Poblenz, B. Heying, et al.. (2001). Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth. 233(4). 709–716. 16 indexed citations

Elsass, C. R., C. Poblenz, B. Heying, et al.. (2001). Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 40(11R). 6235–6235. 10 indexed citations

Brown, Jay S., et al.. (2001). Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots. physica status solidi (b). 228(1). 199–202. 14 indexed citations

Saxler, A., P. Debray, R. Perrin, et al.. (2000). Electrical transport of an AlGaN/GaN two-dimensional electron gas. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 619–625. 1 indexed citations

10.

Elsass, C. R., Tom Mates, B. Heying, et al.. (2000). Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy. Applied Physics Letters. 77(20). 3167–3169. 46 indexed citations

11.

Elhamri, S., A. Saxler, W. C. Mitchel, et al.. (2000). Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure. Journal of Applied Physics. 88(11). 6583–6588. 17 indexed citations

12.

Saxler, A., P. Debray, R. Perrin, et al.. (2000). Characterization of an AlGaN/GaN two-dimensional electron gas structure. Journal of Applied Physics. 87(1). 369–374. 54 indexed citations

13.

Elsass, C. R., I. P. Smorchkova, B. Heying, et al.. (2000). Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 39(10B). L1023–L1023. 10 indexed citations

14.

Heying, B., I. P. Smorchkova, C. Poblenz, et al.. (2000). Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 77(18). 2885–2887. 164 indexed citations

15.

Zhang, Yifei, I. P. Smorchkova, C. R. Elsass, et al.. (2000). Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies. Journal of Applied Physics. 87(11). 7981–7987. 91 indexed citations

16.

Smorchkova, I. P., S. Keller, S. Heikman, et al.. (2000). Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers. Applied Physics Letters. 77(24). 3998–4000. 104 indexed citations

17.

Smorchkova, I. P., C. R. Elsass, J. P. Ibbetson, et al.. (1999). Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy. Journal of Applied Physics. 86(8). 4520–4526. 364 indexed citations

18.

Saxler, A., P. Debray, R. Perrin, et al.. (1999). Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas. MRS Proceedings. 595.

19.

Elsass, C. R., I. P. Smorchkova, B. Heying, et al.. (1999). High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 74(23). 3528–3530. 79 indexed citations

20.

Wu, Xuehua, C. R. Elsass, A. Abare, et al.. (1998). Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells. Applied Physics Letters. 72(6). 692–694. 401 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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