John F. Kaeding

808 citations

12 papers · 649 indexed · h-index 11

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 12
- GaN-based semiconductor devices and materials 12
Electronic, Optical and Magnetic Materials 6
- Ga2O3 and related materials 6

Co-authors: Nathan F. Gardner Michael R. Krames Aurélien David Michael J. Grundmann Shuji Nakamura Rajat Sharma P. Fini James S. Speck
Journals: Applied Physics Letters (5 papers)Japanese Journal of Applied Physics (3 papers)Current Applied Physics (1 paper)Journal of Crystal Growth (1 paper)physica status solidi (a) (1 paper)
Partner nations: United States Japan South Korea

In The Last Decade

John F. Kaeding

12 papers receiving 612 citations

Peers

Countries citing papers authored by John F. Kaeding

Since Specialization

Citations

This map shows the geographic impact of John F. Kaeding's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John F. Kaeding with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John F. Kaeding more than expected).

Fields of papers citing papers by John F. Kaeding

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John F. Kaeding. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John F. Kaeding. The network helps show where John F. Kaeding may publish in the future.

Co-authors

The 25 scholars most cited alongside John F. Kaeding, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with John F. Kaeding Line = papers co-authored together John F. Kaeding links everyone, so they are left out of the graph.

All Works

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12 of 12 papers shown

#	Work
1	Electroluminescence enhancement of ( 11 2 ¯ 2 ) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates Current Applied Physics ·Si‐Young Bae, Dong‐Seon Lee, Bo Kong, Hyung Koun Cho, John F. Kaeding, Shuji Nakamura, Steven P. DenBaars, James S. Speck	2011	17
2	Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy Applied Physics Letters ·Takeyoshi Onuma, Akira Uedono, А.С. Гращенко, Hitoshi Sato, John F. Kaeding, Michael Iza, Steven P. DenBaars, Shuji Nakamura, Shigefusa F. Chichibu	2010	11
3	Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by ammonia‐source molecular beam epitaxy Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Takuya Hoshi, Takahiro Koyama, Rick S. Peter, Akira Uedono, John F. Kaeding, Rajat Sharma, Shuji Nakamura, Shigefusa F. Chichibu	2008	10
4	Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes Applied Physics Letters ·Aurélien David, Michael J. Grundmann, John F. Kaeding, Nathan F. Gardner, Fabiana Bom Kraemer, Michael R. Krames	2008	303
5	Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy Applied Physics Letters ·T. Koyama, María Díaz de Torres, Takuya Hoshi, Akira Uedono, John F. Kaeding, Rajat Sharma, Shuji Nakamura, Shigefusa F. Chichibu	2007	59
6	Photoelectrochemical Properties of Nonpolar and Semipolar GaN Japanese Journal of Applied Physics ·Katsushi Fujii, Anna Chmielarz-Czarnocińska, Hisashi Masui, Troy J. Baker, Michael Iza, Hitoshi Sato, John F. Kaeding, Takafumi Yao, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Kazuhiro Ohkawa	2007	23
7	Effect of Substrate Miscut on the Direct Growth of Semipolar (10-1-1) GaN on (100) MgAl₂O₄ by Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics ·John F. Kaeding, Michael Iza, Hitoshi Sato, Steven P. DenBaars, James S. Speck, Shuji Nakamura	2006	15
8	Realization of high hole concentrations in Mg doped semipolar (101¯1¯) GaN Applied Physics Letters ·John F. Kaeding, А.С. Гращенко, Hitoshi Sato, Michael Iza, Tom Mates, Steven P. DenBaars, James S. Speck, Shuji Nakamura	2006	12
9	Strain‐relaxation in NH₃‐source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates physica status solidi (a) ·T. Koyama, María Díaz de Torres, Y. Uchinuma, John F. Kaeding, Rajat Sharma, Takeyoshi Onuma, Shuji Nakamura, Shigefusa F. Chichibu	2006	15
10	Effect of nitridation on polarity, microstructure, and morphology of AlN films Applied Physics Letters ·Yuan Wu, Camilla Elise Joergensen, John F. Kaeding, Rajat Sharma, P. Fini, Shuji Nakamura, James S. Speck	2004	83
11	Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes Journal of Crystal Growth ·John F. Kaeding, Yuan Wu, Tetsuo Fujii, Rajat Sharma, P. Fini, James S. Speck, Shuji Nakamura	2004	20
12	292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base Japanese Journal of Applied Physics ·Camilla Elise Joergensen, P. Morgan Pattison, John F. Kaeding, Rajat Sharma, P. Fini, Shuji Nakamura	2003	81

About John F. Kaeding

John F. Kaeding is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, Materials Chemistry and Biomedical Engineering, having authored 12 papers that have together received 649 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (12 papers), Ga2O3 and related materials (6 papers), ZnO doping and properties (5 papers), Acoustic Wave Resonator Technologies (4 papers), Semiconductor materials and devices (4 papers), Metal and Thin Film Mechanics (3 papers), Semiconductor Quantum Structures and Devices (1 paper) and Plasma Diagnostics and Applications (1 paper). The work is most often cited by research in Condensed Matter Physics (608 citations), Electronic, Optical and Magnetic Materials (229 citations), Atomic and Molecular Physics, and Optics (281 citations), Mechanics of Materials (132 citations) and Materials Chemistry (240 citations). John F. Kaeding has collaborated with scholars based in United States, Japan and South Korea. Frequent co-authors include Nathan F. Gardner, Michael R. Krames, Aurélien David, Michael J. Grundmann, Shuji Nakamura, Rajat Sharma, P. Fini, James S. Speck, Yuan Wu and P. Morgan Pattison. Their work appears in journals such as Applied Physics Letters, Japanese Journal of Applied Physics, Current Applied Physics, Journal of Crystal Growth and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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