S. Founta

715 total citations
21 papers, 558 citations indexed

About

S. Founta is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, S. Founta has authored 21 papers receiving a total of 558 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Condensed Matter Physics, 11 papers in Atomic and Molecular Physics, and Optics and 8 papers in Electrical and Electronic Engineering. Recurrent topics in S. Founta's work include GaN-based semiconductor devices and materials (18 papers), Semiconductor Quantum Structures and Devices (11 papers) and Silicon Carbide Semiconductor Technologies (6 papers). S. Founta is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), Semiconductor Quantum Structures and Devices (11 papers) and Silicon Carbide Semiconductor Technologies (6 papers). S. Founta collaborates with scholars based in France, Spain and United States. S. Founta's co-authors include H. Mariette, B. Daudin, Edward B. Flagg, Chih‐Kang Shih, Wenquan Ma, John W. Robertson, Greg Salamo, D.G. Deppe, Min Xiao and Andreas Müller and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. Founta

21 papers receiving 544 citations

Peers

S. Founta
Katsuyuki Hoshino Japan
R. Seguin Germany
Guilherme Matos Sipahi Brazil
Matthias Pernpeintner Germany
A. García‐Cristóbal Spain
Jon Heffernan United Kingdom
M. V. Durnev Russia
Ryugo Iida Japan
G. J. Hamhuis Netherlands
Max Beer Germany
Katsuyuki Hoshino Japan
S. Founta
Citations per year, relative to S. Founta S. Founta (= 1×) peers Katsuyuki Hoshino

Countries citing papers authored by S. Founta

Since Specialization
Citations

This map shows the geographic impact of S. Founta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Founta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Founta more than expected).

Fields of papers citing papers by S. Founta

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Founta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Founta. The network helps show where S. Founta may publish in the future.

Co-authorship network of co-authors of S. Founta

This figure shows the co-authorship network connecting the top 25 collaborators of S. Founta. A scholar is included among the top collaborators of S. Founta based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Founta. S. Founta is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Garro, N., et al.. (2016). Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field. Materials Science in Semiconductor Processing. 49. 76–80. 1 indexed citations
2.
Robertson, John W., S. Founta, Mark Hughes, et al.. (2012). Polarization-resolved resonant fluorescence of a single semiconductor quantum dot. Applied Physics Letters. 101(25). 1 indexed citations
3.
Vennéguès, P., S. Founta, Henri Mariette, & B. Daudin. (2010). Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructure of Nonpolar AlN Films Grown on (1120) 6H-SiC by Plasma-Assisted Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 49(4R). 40201–40201. 3 indexed citations
4.
Mata, Rafael, A. Cros, Alejandro Molina‐Sánchez, et al.. (2010). Reversed polarized emission in highly straineda-plane GaN/AlN multiple quantum wells. Physical Review B. 82(12). 7 indexed citations
5.
Flagg, Edward B., John W. Robertson, S. Founta, et al.. (2009). Direct Evidence of Interlevel Exciton Transitions Mediated by Single Phonons in a Semiconductor Quantum Dot Using Resonance Fluorescence Spectroscopy. Physical Review Letters. 102(9). 97402–97402. 12 indexed citations
6.
Brimont, Christelle, Mathieu Gallart, B. Hönerlage, et al.. (2009). Optical and spin coherence of excitons in zinc-blende GaN. Journal of Applied Physics. 106(5). 12 indexed citations
7.
Mata, Rafael, N. Garro, A. Cros, et al.. (2009). Anisotropic polarization of non‐polar GaN quantum dot emission. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 2 indexed citations
8.
Flagg, Edward B., Andreas Müller, John W. Robertson, et al.. (2009). Resonantly driven coherent oscillations in a solid-state quantum emitter. Nature Physics. 5(3). 203–207. 246 indexed citations
9.
Lagarde, Delphine, A. Balocchi, H. Carrère, et al.. (2008). Room-temperature optical orientation of the exciton spin in cubicGaN∕AlNquantum dots. Physical Review B. 77(4). 33 indexed citations
10.
Lagarde, Delphine, A. Balocchi, H. Carrère, et al.. (2008). Exciton spin dynamics in zinc-blende GaN/AlN quantum dots: Temperature dependence. Microelectronics Journal. 40(2). 328–330. 1 indexed citations
11.
Rol, Fabian, S. Founta, H. Mariette, et al.. (2007). Probing exciton localization in nonpolarGaN∕AlNquantum dots by single-dot optical spectroscopy. Physical Review B. 75(12). 46 indexed citations
12.
Founta, S., Catherine Bougerol, H. Mariette, B. Daudin, & P. Vennéguès. (2007). Anisotropic morphology of nonpolar a-plane GaN quantum dots and quantum wells. Journal of Applied Physics. 102(7). 33 indexed citations
13.
Founta, S., Fabian Rol, E. Bellet‐Amalric, et al.. (2006). Growth of GaN quantum dots on nonpolar A ‐plane SiC by molecular‐beam epitaxy. physica status solidi (b). 243(15). 3968–3971. 10 indexed citations
14.
Rol, Fabian, B. Gayral, S. Founta, et al.. (2006). Optical properties of single non‐polar GaN quantum dots. physica status solidi (b). 243(7). 1652–1656. 8 indexed citations
15.
Cros, A., A. García‐Cristóbal, N. Garro, et al.. (2006). Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown on a‐plane 6H‐SiC. physica status solidi (b). 243(7). 1499–1507. 7 indexed citations
16.
Founta, S., Fabian Rol, E. Bellet‐Amalric, et al.. (2005). Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy. Applied Physics Letters. 86(17). 53 indexed citations
17.
Garro, N., A. Cros, A. Cantarero, et al.. (2005). Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots. Applied Physics Letters. 87(1). 28 indexed citations
18.
Founta, S., Fabian Rol, Thomas Andreev, et al.. (2005). GaN quantum dots grown on non‐polar a‐plane SiC by plasma‐assisted molecular beam epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2341–2344. 1 indexed citations
19.
Gérard, Jean‐Michel, L. Ferlazzo, S. Founta, et al.. (2004). Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence. Physica E Low-dimensional Systems and Nanostructures. 26(1-4). 203–206. 35 indexed citations
20.
Founta, S., N. Gogneau, E. Martínez, et al.. (2004). Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers. Materials science forum. 457-460. 1561–1564. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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